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英文:Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO : Ga 
著者
和文: 牧野 哲征, 瀬川 勇三朗, 吉田 伸, 塚崎 敦, 大友 明, 川崎 雅司.  
英文: T. Makino, Y. Segawa, S. Yoshida, A. Tsukazaki, A. Ohtomo, M. Kawasaki.  
言語 English 
掲載誌/書名
和文: 
英文:Applied Physics Letters 
巻, 号, ページ Vol. 85    No. 5    pp. 759-761
出版年月 2004年8月 
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ファイル
公式リンク <Go to ISI>://000222969200021
 
DOI https://doi.org/10.1063/1.1776630
アブストラクト We investigated the optical properties of epitaxial n-type ZnO films grown on lattice-matched ScAlMgO4 substrates. As the Ga doping concentration increased up to 6x10(20) cm(-3), the absorption edge showed a systematic blueshift, consistent with the Burstein-Moss effect. A bright near-band-edge photoluminescence (PL) could be observed even at room temperature, the intensity of which increased monotonically as the doping concentration was increased except for the highest doping level. It indicates that nonradiative transitions dominate at a low doping density. Both a Stokes shift and broadening in the PL band are monotonically increasing functions of donor concentration, which was explained in terms of potential fluctuations caused by the random distribution of donor impurities.

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