We have grown nitrogen-doped MgxZn1-xO:N films on Zn-polar ZnO single crystal substrates by molecular beam epitaxy. As N-sources, we employed NO-plasma or NH3 gas itself. As x increased, optimum growth temperature window for smooth film morphology shifted to higher temperatures, while maintaining high N-concentration (similar to 1x1019 cm-3). The heterosructures of MgxZn1-xO:N (0.1 < x < 0.4)/ZnO were fabricated into light emitting diodes of 500-mu m-diameter. We observed ultraviolet near-band-edge emission (lambda similar to 382 nm) with an output power of 0.1 mu W for a NO-plasma-doped LED and 70 mu W for a NH3-doped one at a bias current of 30 mA.
各種検索
サポート
ヘルプ