Preparation of p-type hydrogenated microcrystalline silicon oxide thin films (p-μc-Si1-xOx:H) by 13.56 MHz RF-PECVD method for use as a p-layer of hetero-junction μc-Si:H solar cells is presented. We investigated effects of wide-gap p-μc-Si1-xOx:H layer on the performance of hetero-junction μc-Si:H solar cells under various light intensity. We observed that a wide-gap p-μc-Si1-xOx:H is effective to improve the open circuit voltage of the solar cells. We also confirmed that the open circuit voltage (Voc) logarithmically increased with increasing the light intensity, and the enhancement of Voc improved with increasing the band gap of p-layer. These results indicate that wide-gap p-μc-Si1-xOx:H is promising for use as window layer in hetero-junction μc-Si:H solar cells.
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