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タイトル
和文: 
英文:A Single-platform Simulation and Design Technique for CMOS-MEMS Based on a Circuit Simulator with Hardware Description Language 
著者
和文: 小西 敏文, 町田 克之, 丸山 智史, 三田 信, 益 一哉, 年吉 洋.  
英文: Toshifumi Konishi, Katsuyuki Machida, Satoshi Maruyama, Makoto Mita, Kazuya Masu, Hiroshi Toshiyoshi.  
言語 English 
掲載誌/書名
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英文:IEEE/ASME Journal of Microelectromechanical Systems 
巻, 号, ページ vol. 22    no. 3    pp. 755-767
出版年月 2013年 
出版者
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会議名称
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開催地
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DOI https://doi.org/10.1109/JMEMS.2013.2243111
アブストラクト This paper presents a multiphysics simulation and layout design technique for complementary metal?oxide?semiconductor?microelectromechanical systems (MEMS) (CMOS-MEMS) based on an electrical circuit simulator. An equivalent circuit model for the mechanical equation of motion has been translated into a Verilog-A-compatible hardware description language (HDL) in the Cadence Virtuoso environment to attain new designing capabilities such as automatic mask-layout synthesis, design rule check, and layout-versus-schematic verification for MEMS structures. Microelectromechanical components such as parallel-plate actuator and bending suspension, whose analytical equation models are already known, are also interpreted into HDL-coded equivalent circuits. Behavior of a MEMS device, including the electrostatic displacement hysteresis and the negative spring constant effect, is numerically simulated as a lumped mass-and-spring system, which has been verified to quantitatively agree with that of the corresponding analytical simulation results. A multiphysics model for the Colpitts oscillator circuit has been built in the developed simulation environment by replacing a quartz resonator with a compact model of an electrostatic silicon resonator, and its self-excited resonance has been confirmed by the simulation after the coordination of the device and circuit parameters. A prototype conversion tool for MEMS parameterized cell has also been developed to demonstrate automatic generation of mask layouts for a silicon resonator, which has been cross-checked against the experimental measurements to verify the simulation accuracy.

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