This paper reports the design and evaluation results of a capacitive CMOS?MEMS sensor that consists of the proposed sensor circuit and a capacitive MEMS device implemented on the circuit. To design a capacitive CMOS?MEMS sensor, a multi-physics simulation of the electromechanical behavior of both the MEMS structure and the sensing LSI was carried out simultaneously. In order to verify the validity of the design, we applied the capacitive CMOS?MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto a 0.35-?m CMOS circuit. The experimental results of the CMOS?MEMS accelerometer exhibited good agreement with the simulation results within the input acceleration range between 0.5 and 6 G (1 G = 9.8 m/s2), corresponding to the output voltages between 908.6 and 915.4 mV, respectively. Therefore, we have confirmed that our capacitive CMOS?MEMS sensor and the multi-physics simulation will be beneficial method to realize integrated CMOS?MEMS technology.
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