It has been proven that many types of radicals released from atmospheric-pressure plasma can provide effective surface treatment and modification of materials. However, the method for measuring radicals generated with atmospheric-pressure plasma and their reaction mechanisms have not become clear in material surface processing. The OH radical distribution was measured successfully in nonequilibrium atmospheric-pressure dc pulse discharge plasma jet by use of the laser-induced fluorescence system. The OH transition $[A^{2}Sigma^{+}({v}^{prime}=1)leftarrow X^{2}Pi ({v}^{primeprime}=0)]$ at 282 nm was used to monitor the ground-state OH radicals.
各種検索
サポート
ヘルプ