On the possibility of simplified monitoring of electron temperature and density of low - pressure argon plasma by line-pair intensity-ratio measurement with CR-model analysis
W
e surveyed the dependence of excited
-
state density of argon atom on the electron temperature
T
e
and density
N
e
over their
typical range expected
in the semiconductor processes
by
applying Ar CR model
.
It is
found that the ratios between some level
pairs can be interpreted as an approximate measure of
T
e
, and some others as that of
N
e
.
For example, the density ratio of
(4p’[1/2])/(4p[1/2]) is determined mos
tly by
T
e
, while that of (4d[3/2]
o
)/(4p[1/2]) mostly by
N
e
. We discuss the reason for this
difference for each level pair in terms of atomic processes in the argon plasma, based on the CR model.
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