Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy

Momoko Deura; Takuya Hoshii; Takahisa Yamamoto; Yuichi Ikuhara; Mitsuru Takenaka; Shinichi Takagi; Yoshiaki Nakano; Masakazu Sugiyama

doi:10.1143/APEX.2.011101

論文・著書情報

タイトル

和文:	Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy
英文:	Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy

著者

和文:	Momoko Deura, Takuya Hoshii, Takahisa Yamamoto, Yuichi Ikuhara, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, Masakazu Sugiyama.
英文:	Momoko Deura, Takuya Hoshii, Takahisa Yamamoto, Yuichi Ikuhara, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, Masakazu Sugiyama.

言語

English

掲載誌/書名

和文:	Applied Physics Express
英文:	Applied Physics Express

巻, 号, ページ

Vol. 2 No. 1 pp. 011101

出版年月

2009年1月

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英文:

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公式リンク

http://stacks.iop.org/1882-0786/2/011101

DOI

https://doi.org/10.1143/APEX.2.011101

アブストラクト

We have obtained a dislocation-free InGaAs layer on Si(111) using micro-channel selective-area metalorganic vapor phase epitaxy. By increasing the supply of the Ga precursor, we removed rotational twins, which have been observed in III-V layers on (111) substrates. From analysis of the atomic structure, the Ga content in the crystal was found to increase gradually as the growth proceeded. This increase resulted in growth in a tilted direction from [111] and extinction of twins. It was concluded that a twin-free InGaAs layer can be obtained when a Ga-rich layer is inserted in the middle of the growth. (C) 2009 The Japan Society of Applied Physics

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