The 2018 International Conference on Solid State Devices and Materials
開催地
和文:
東京
英文:
Tokyo
アブストラクト
Room temperature Negative Differential Resistance (NDR) with peak-to-valley current ratio (PVCR) as high as 105 and with peak current density (Jpeak) larger than 100 kA/cm2 has been demonstrated using atomically-thin-CaF2 energy barrier layers and Si quantum-wells triple-barrier resonant tunneling diode (RTD) structures. NDR characteristics were reasonably explained using theoretical analysis using simple model based on Esaki-Tsu formula and transfer matrix method.
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