Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs

論文・著書情報

タイトル

和文:
英文:	Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs

著者

和文:	渡辺正裕, Naoyuki Shigyo, 星井拓也, Kazuyoshi Furukawa, 角嶋邦之, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Toshihiro Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, 宗田伊理也, 若林整, Akira Nakajima, Shin-ichi Nishizawa, 筒井一生, Toshiro Hiramoto, 大橋弘通, 岩井洋.
英文:	Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Toshihiro Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai.

言語

English

掲載誌/書名

和文:
英文:

巻, 号, ページ

出版年月

2019年5月

出版者

和文:
英文:

会議名称

和文:
英文:	31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019)

開催地

和文:
英文:	Shahai