High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for Three-dimensional ICs

論文・著書情報

タイトル

和文:
英文:	High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for Three-dimensional ICs

著者

和文:	"Jun’ichi Shimizu", "Takumi Ohashi", 松浦賢太朗, 宗田伊理也, 角嶋邦之, 筒井一生, 若林整.
英文:	"Jun’ichi Shimizu", "Takumi Ohashi", "Kentaro Matsuura", "Iriya Muneta", "Kuniyuki Kakushima", "Kazuo Tsutsui", "Hitoshi Wakabayashi".

言語

English

掲載誌/書名

和文:
英文:	Japanese Journal of Applied Physics (JJAP)

巻, 号, ページ

Vol. 56 No. 4S

出版年月

2017年

出版者

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英文:

会議名称

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英文:

開催地

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英文:

DOI