論文
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N. Nishiyama, M. Arai, S. Shinada, T. Miyamoto, F. Koyama, K. Iga Growth and optical properties of highly strained GaInAs/GaAs quantum wells on (311)B GaAs by MOCVD J. Crystal Growth 2000.
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N. Nishiyama, M. Arai, S. Shinada, T. Miyamoto, F. Koyama, K. Iga 1.15μm lasing operation of highly strained GaInAs/GaAs on GaAs (311)B substrate with high characteristic temperature (T0=210 K) Jpn. J. Appl. Phys. Oct. 2000.
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Shunichi Sato, N. Nishiyama, T. Miyamoto, Takashi Takahashi, Naoto Jikutani, M. Arai, A. Matsutani, F. Koyama, K. Iga Continuous wave operation of 1.26μm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition Electron. Lett. Oct. 2000.
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M. Arai, N. Nishiyama, S. Shinada, A. Matsutani, F. Koyama, K. Iga Highly stable single polarization operation of GaInAs/GaAs vertical-cavity surface-emitting laser on GaAs (311)B substrate under high-speed modulation Jpn. J. Appl. Phys. Aug. 2000.
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N. Nunoya, M. Nakamura, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura, S. Arai Sub-milliampere operation of 1.5μm wavelength high index-coupled buried heterostructure distributed feedback lasers Electron. Lett. Jul. 2000.
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T. Amano, F. Koyama, N. Nishiyama, K. Iga 2X2 multiwavelength micromachined AlGaAs/GaAs vertical cavity filter array with wavelength control layer Jpn. J. Appl. Phys. Jul. 2000.
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N. Nishiyama, M. Arai, S. Shinada, Koichi Suzuki, F. Koyama, K. Iga Multi-oxide layer structure for single-mode operation in vertical-cavity surface-emitting lasers IEEE Photon. Technol. Lett. Jun. 2000.
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M. Arai, N. Nishiyama, S. Shinada, F. Koyama, K. Iga AlAs oxidation system with H2O vaporizer for oxide-confined surface emitting lasers Jpn. J. Appl. Phys. Jun. 2000.
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M. Arai, N. Nishiyama, S. Shinada, A. Matsutani, F. Koyama, K. Iga Vertical-cavity surface-emitting laser array on GaAs(311)B substrate exhibiting single-transverse mode and stable-polarization operation Jpn. J. Appl. Phys. Jun. 2000.
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Takeru Amano, F. Koyama, N. Nishiyama, K. Iga Temperature-insensitive micromachined AlGaAs-GaAs vertical cavity filter IEEE Photon. Technol. Lett. May. 2000.
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F. Koyama, Takeru Amano, Noriyoshi Furukawa, N. Nishiyama, M. Arai, K. Iga Micromachined semiconductor vertical cavity for temperature insensitive surface emitting lasers and optical filters Jpn. J. Appl. Phys. Mar. 2000.
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T. Amano, F. Koyama, N. Furukawa, N. Nishiyama, A. Matsutani, K. Iga Micromachined AlGaAs/GaAs vertical cavity filter with adjustable temperature dependence and wavelength trimming ability Electron. Lett. Jan. 2000.
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H. Yasumoto, N. Nunoya, H. Midorikawa, S. Tamura, S. Arai 1.5μm wavelength strain-compensated GaInAsP/InP wirelike laser by CH4/H2 reactive ion etching The 12th Int. Conf. on Indium Phosphide and Related Materials IPRM’2000), Williamsburg .
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M. M. Raj, J. Wiedmann, Y. Saka, K. Ebihara, K. Matsui, S. Tamura, S. Arai 1.55μm wavelength deeply etched semiconductor/benzocyclobutene DBR lasers 電子情報通信学会技術研究報告[光エレクトロニクス] .
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J. Wiedmann, M. M. Raj, Y. Saka, K. Ebihara, A. Umeshima, S. Tamura, S. Arai Deeply etched coupled cavity laser with DBR facet for low threshold and single mode operation The 5th Optoelectron. and Commun. Conf. (OECC’2000), Chiba .
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M. M. Raj, N. Serizawa, S. Arai Theoretical analysis of GaInAsP/InP multiple micro-cavity laser Jpn. J. Appl. Phys. .
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J. Wiedmann, M. M. Raj, Y. Saka, S. Tamura, S. Arai Singlemode operation of deeply etched coupled cavity laser with DBR facet Electron. Lett. .
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M. Nakamura, N. Nunoya, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura, S. Arai Very low threshold current density operation of 1.5μm DFB lasers with wire-like active regions Electron. Lett. .
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N. Nunoya, M. Nakamura, H. Yasumoto, S. Tamura, S. Arai GaInAsP/InP multiple-layered quantum-wire lasers Jpn. J. Appl. Phys. .
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S. Arai, M. M. Raj, J. Wiedmann Multiple-reflector lasers for photonic integration The 13th IEEE Lasers and Electro-Optics Society Meeting (LEOS’00), Peurto Rico .
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S. Arai Low-damage fabrication of GaInAsP/InP fine-structures for high performance lasers 4th International Workshop of the Canadian - European Research Initiative on Nanostructures (CERION), Würzburg .
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N. Nunoya, M. Morshed, M. Nakamura, S. Tamura, S. Arai High single-mode yield 1.55μm GaInAsP/InP BH-DFB lasers with periodic wirelike active regions The 17th IEEE Int’l Semicon. Laser Conf., Monterey (USA) .
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S. Arai, H. Yasumoto, N. Nunoya, H. Midorikawa, S. Tamura Low-damage GaInAsP/InP fine structure lasers by CH4/H2 RIE and OMVPE regrowth Int. Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS’00), Sapporo .
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N. Nunoya, M. Nakamura, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura, S. Arai Submilliampere operation of 1.55μm GaInAsP/InP DFB lasers with deeply etched active regions The 5th Optoelectron. and Commun. Conf. (OECC’2000), Chiba .
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N. Nunoya, H. Yasumoto, H. Midorikawa, S. Tamura, S. Arai Low threshold current density operatin of GaInAsP/InP lasers with strain-compensated multi-layered wirelike active regions Jpn. J. Appl. Phys. .
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N. Nunoya, M. Nakamura, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura, S. Arai 1.5μm GaInAsP/InP double-quantum-well DFB lasers with deeply etched active regions The 12th Int’l Conf. on Indium Phosphide and Related Materials IPRM’2000), Williamsburg .
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M. M. Raj, J. Wiedmann, Y. Saka, K. Ebihara, K. Matsui, S. Arai Highly uniform 1.55μm wavelength lasers with deeply etched semiconductor/Benzocyclobutene DBR The 12th Int’l Conf. on Indium Phosphide and Related Materials IPRM’2000), Williamsburg .
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M. M. Raj, J. Wiedmann, Y. Saka, K. Ebihara, S. Arai Highly uniform 1.5μm wavelength deeply etched semiconductor / benzocyclobutene distributed Bragg reflector lasers Jpn. J. Appl. Phys. .
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Y. Suematsu, S. Arai Single-mode semiconductor lasers for long-wavelength optical fiber communications and dynamics of semiconductor lasers IEEE J. on Selected Topics in Quantum Electron. 2000.
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安本英雄, 布谷伸浩, 緑川英樹, 田村茂雄, 荒井 滋久 GaInAsP/InP歪補償多層細線レーザの低しきい値動作 第47回応用物理学会関係連合講演会 .
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中村円香, 布谷伸浩, モニール・モーシッド, 安本英雄, 田村茂雄, 荒井 滋久 活性層分離型2層分離型DFBレーザのしきい値電流の細線幅依存性 第47回応用物理学会関係連合講演会 .
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布谷伸浩, 中村円香, 福田光一朗, モニール・モーシッド, 田村茂雄, 荒井 滋久 活性層分離型DFBレーザのサブミリアンペア動作 第47回応用物理学会関係連合講演会 .
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ヨルク・ウィドマン, モティ・マダン・ラジュ, 海老原幸司, 松井研輔, 田村茂雄, 荒井 滋久 深いエッチング溝にBCBを埋め込んだ1.55μm波長帯単一モード半導体レーザの設計と試作 電子情報通信学会技術研究報告[光エレクトロニクス] .
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ヨルク・ウィドマン, モティ・マダン・ラジュ, 海老原幸司, 松井研輔, 荒井 滋久 垂直DFBグレーティングを用いた分布反射型(DR)レーザ 第61回応用物理学会学術講演会 .
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緑川英樹, 布谷伸浩, 村主賢悟, 田村茂雄, 荒井 滋久 GaInAsP/InP歪補償細線レーザの自然放出光効率の温度依存性 第61回応用物理学会学術講演会 .
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モニール・モーシッド, 布谷伸浩, 荒井 滋久 活性層分離型2層DFBレーザの単一モード特性に関する検討 第61回応用物理学会学術講演会 .
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布谷伸浩, モニール・モーシッド, 田村茂雄, 荒井 滋久 GaInAsP/InP活性層分離型2層BH-DFBレーザの単一モード特性 第61回応用物理学会学術講演会 .
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海老原幸司, ヨルク・ウィドマン, モティ・マダン・ラジュ, 荒井 滋久 短共振器半導体/BCB DBRレーザの前端面反射器の設計 第61回応用物理学会学術講演会 .
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ヨルク・ウィドマン, モティ・マダン・ラジュ, 阪義和, 田村茂雄, 荒井 滋久 多重共振器を有するDBRレーザの単一波長動作 第47回応用物理学会関係連合講演会 .
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阪義和, 海老原幸司, モティ・マダン・ラジュ, ヨルク・ウィドマン, 荒井 滋久 両端にBCB/半導体反射鏡を有するDBRレーザ 第47回応用物理学会関係連合講演会 .
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モティ・マダン・ラジュ, 阪義和, 海老原幸司, 荒井 滋久 1.5μm波長帯半導体/BCB DBRレーザの低しきい値・高効率動作 第47回応用物理学会関係連合講演会 .
学会発表
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F. Koyama, Dietmar Schlenker, N. Nishiyama, T. Miyamoto, K. Iga Highly strained GaInAs/GaAs quantum well lasers emitting at 1.2µm wavelength Frontier Science Research Conf. 2000.
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S. Shinada, F. Koyama, N. Nishiyama, M. Arai, A. Matsutani, Kenya Goto, K. Iga Optical near field by vertical cavity surface emitting laser Trans. IEICE 2000.