"竇春萌,Soshi Sato,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,杉井信之,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Si nanowire FET with asymmetric channel","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"W. Feng,R. Hettiarachchi,Yeonghun Lee,Soshi Sato,Kuniyuki KAKUSHIMA,M. Sato,K. Fukuda,M. Niwa,K. Yamabe,Kenji Shiraishi,HIROSHI IWAI","Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ~Impact of charge-centroid in the channel due to quantum effect on 1/f noise ~","2011 IEDM",,,,,,2013,
"中島一裕,Soshi Sato,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method","ECS 220th Meeting","ECS Transactions",,"Vol. 41","No. 7","pp. 293-298",2013,
"中島一裕,Soshi Sato,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method","ECS 220th Meeting","ECS Transactions",,"Vol. 41","No. 7","pp. 293-298",2013,
"W. Feng,R. Hettiarachchi,Soshi Sato,Kuniyuki KAKUSHIMA,M. Niwa,HIROSHI IWAI,Keisaku Yamada,Kenji Ohmori","Advantages of Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties",,"Japanese Journal of Applied Physics",,"Vol. 51",,"pp. 04DC06-1-04DC06-5",2012,Apr.
"大毛利健治,W. Feng,R. Hettiarachchi,Yeonghun Lee,Soshi Sato,Kuniyuki KAKUSHIMA,M. Sato,K. Fukuda,M. Niwa,K. Yamabe,Kenji Shiraishi,HIROSHI IWAI,Keisaku Yamada","Low-frequency noise reduction in Si Nanowire MOSFETs","ECS 221st Meeting","ECS Transactions",,"Vol. 45","No. 3","pp. 437-442",2012,
"竇春萌,Soshi Sato,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,HIROSHI IWAI,takeo hattori","Si nanowire FET with asymmetric channel","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"竇春萌,Soshi Sato,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,HIROSHI IWAI,takeo hattori","Si nanowire FET with asymmetric channel","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"大毛利健治,W. Feng,R. Hettiarachchi,Yeonghun Lee,Soshi Sato,Kuniyuki KAKUSHIMA,M. Sato,K. Fukuda,M. Niwa,K. Yamabe,Kenji Shiraishi,HIROSHI IWAI,Keisaku Yamada","Low-frequency noise reduction in Si Nanowire MOSFETs","ECS 221st Meeting","ECS Transactions",,"Vol. 45","No. 3","pp. 437-442",2012,
"大毛利健治,W. Feng,R. Hettiarachchi,Yeonghun Lee,Soshi Sato,Kuniyuki KAKUSHIMA,M. Sato,K. Fukuda,M. Niwa,K. Yamabe,Kenji Shiraishi,HIROSHI IWAI,Keisaku Yamada","Low-frequency noise reduction in Si Nanowire MOSFETs","ECS 221st Meeting","ECS Transactions",,"Vol. 45","No. 3","pp. 437-442",2012,
"Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,Kenji Ohmori,KENJI NATORI,Keisaku Yamada,HIROSHI IWAI","Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure",,"Solid-State Electronics",,"Vol. 65-66",,"pp. 2-8",2011,Nov.
"Soshi Sato,Kuniyuki KAKUSHIMA,Kenji Ohmori,KENJI NATORI,Keisaku Yamada,HIROSHI IWAI","Electrical characteristics of asymmetrical silicon nanowire field-effect transistors",,"APPLIED PHYSICS LETTERS",,"Vol. 99","No. 22","pp. 223518-1-3",2011,Nov.
"Soshi Sato,Wei Li,Kuniyuki KAKUSHIMA,Kenji Ohmori,KENJI NATORI,Keisaku Yamada,HIROSHI IWAI","Eatraction of additional interfacial states of silicon nanowire field-effect transistors",,"APPLIED PHYSICS LETTERS",,"Vol. 98",,,2011,June
"Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,Kenji Ohmori,KENJI NATORI,Keisaku Yamada,HIROSHI IWAI","Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors",,"Microelectronics Reliability",,"Vol. 51",,"pp. 879-884",2011,May
"DARYOUSH ZADEH,Soshi Sato,Kuniyuki KAKUSHIMA,A. Srivastava,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,C.K. Sarkar,HIROSHI IWAI","Effects of La2O3  incorporation in HfO2 gated nMOSFETs on low-frequency noise",,"Microelectronics Reliability",,"Vol. 51",,"pp. 746-750",2011,Apr.
"Soshi Sato,Kenji Ohmori,Kuniyuki KAKUSHIMA,Ahmet Parhat,KENJI NATORI,Keisaku Yamada,HIROSHI IWAI","Experimental Characterization of Quasi-Fermi Pontential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry",,"Applied Physics Express",,"Vol. 4","No. 044201",,2011,Apr.
"Soshi Sato","A study on electrical characteristics of silicon nanowire field effect transistors",,,,,,,2011,Mar.
"Kenji Ohmori,W. Feng,Soshi Sato,R. Hettiarachchi,M. Sato,T. Matsuki,Kuniyuki KAKUSHIMA,HIROSHI IWAI,Keisaku Yamada","Direct Real-Time Observation of Channel Potential Fluctuation, Correlated to Random Telegraph Noise of Drain Current Using Nanowire MOSFETs with Four-Probe Terminals","2011 Symposium on VLSI Technology",,,,,,2011,
"Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,Kenji Ohmori,KENJI NATORI,Keisaku Yamada,HIROSHI IWAI","Influence of the cross-sectional shape for Si nanowire FETs",",Taiwan-Japan Workshop on “Nano Devices”",,,,,,2011,
"Naoto Shigemori,Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","An effective suppression process for Ni silicide enchroachment into Si nanowire","Taiwan-Japan Workshop on “Nano Devices”",,,,,,2011,
"小山将央,Naoto Shigemori,Hideaki Arai,Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Lateral encroachment of Ni silicide into silicon nanowire","Taiwan-Japan Workshop on “Nano Devices”",,,,,,2011,
"中島一裕,Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Interface State Density Measurement of Three Dimensional Silicon Structures by Charge Pumping Method","Taiwan-Japan Workshop on “Nano Devices”",,,,,,2011,
"W. Feng,R. Hettiarachchi,Soshi Sato,Kuniyuki KAKUSHIMA,M. Niwa,HIROSHI IWAI,Keisaku Yamada,Kenji Ohmori","Advantages of Silicon Nanowire MOSFETs over Planar Ones Investigated from the Viewpoints of Static and Noise Properties","2011 International Conference on Solid State Devices and Materials(SSDM 2011)",,,,,,2011,
"Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,Kenji Ohmori,KENJI NATORI,Keisaku Yamada,HIROSHI IWAI","Structural Effects of Channel Cross-section on a Gate Capacitance of Silicon Nanowire Field-Effect Transistors","CSTIC2011",,,,,,2011,
"フェン ウェイ,ヘッティアーラッチ・ランガ,佐藤創志,角嶋邦之,M.Niwa,岩井洋,山田啓作,大毛利健二","Advantages of Silicon Nanowire MOSFETs over Planar MOSFETs Investigated from the Aspect of Drain-Current Noise","第72回応用物理学会学術講演会",,,,,,2011,
"大毛利健二,フェン ウェイ,佐藤創志,ヘッティアーラッチ・ランガ,佐藤 基之,松木 武雄,角嶋邦之,岩井洋,山田啓作","ドレイン電流のランダムテレグラフノイズに相関したFETチャネルポテンシャル揺らぎの実時間直接観測","第72回応用物理学会学術講演会",,,,,,2011,
"佐藤創志,角嶋邦之,パールハットアヘメト,大毛利健治,名取研二,山田啓作,岩井洋","Effects of corners of channel cross-section on electrical performance of silicon nanowire field-effect transistors","ゲートスタック研究会?材料･プロセス・評価の物理?（第16回研究会）",,,,,,2011,
"竇春萌,Soshi Sato,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Si nanowire FET with asymmetric channel","Tsukuba Nanotechnology Symposium(TNS’11)",,,,,,2011,
"Naoto Shigemori,Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation","tECS 218th Meeting",,,,,,2010,Oct.
"Y. Wu,Naoto Shigemori,Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,西山彰,KENJI NATORI,takeo hattori,HIROSHI IWAI","Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface","ECS 218th Meeting",,,,,,2010,Oct.
"中島 一裕,佐藤創志,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","チャージポンピング法による立体Si構造の界面準位密度の評価","第７１回応用物理学会学術講演会",,,,,,2010,Sept.
"Soshi Sato,Yeonghun Lee,Kuniyuki KAKUSHIMA,Ahmet Parhat,Kenji Ohmori,KENJI NATORI,Keisaku Yamada,HIROSHI IWAI","Gate Semi-Around Si Nanowire FET Fabricated by Conventional CMOS Process with Very High Drivability","ESSDERC 2010, 40th European Solid-State Device Research Conference",,,,,,2010,Sept.
"呉研,茂森直登,佐藤創志,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","トンネルFET動作に向けたNiシリサイド/Si接触におけるトンネル電流の観測","第７１回応用物理学会学術講演会",,,,,,2010,Sept.
"竇 春萌,マイマイティ  マイマイティレャアティ,ダリューシュザデ,佐藤創志,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","希土類(Ce,Eu)酸化物MIM構造の抵抗スイッチング特性","第７１回応用物理学会学術講演会",,,,,,2010,Sept.
"小山 将央,茂森直登,佐藤創志,角嶋邦之,パールハットアヘメト,西山彰,筒井一生,杉井信之,名取研二,服部健雄,岩井洋","窒素導入によるSiナノワイヤ内へのNiシリサイド侵入抑制機構の検討","第７１回応用物理学会学術講演会",,,,,,2010,Sept.
"角嶋邦之,小柳友常,来山大祐,幸田みゆき,宋在烈,佐藤創志,川那子高暢,M. マイマイティ,舘喜一,M.K. Bera,パールハットアヘメト,野平博司,筒井一生,西山彰,杉井信之,名取研二,服部健雄,山田啓作,岩井洋","LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御","応用物理学会分科会 シリコンテクノロジー","，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）",,,"No. 127","pp. 4-8",2010,July
"Kuniyuki KAKUSHIMA,Kiichi Tachi,M.Adachi,Koichi Okamoto,Soshi Sato,Jaeyeol Song,Takamasa Kawanago,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Interface and electrical properties of La-silicate for direct contact of high-k with silicon",,"Solid-State Electronics",,"Vol. 54",,"pp. 715-719",2010,June
"佐藤創志,角嶋邦之,パールハットアヘメト,大毛利健二,名取研二,岩井洋,山田啓作","キャリア移動度評価によるシリコンナノワイヤトランジスタの電気特性解析",,"電子情報通信学会技術研究報告 pp.11-16",,,,,2010,June
"茂森直登,佐藤創志,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","SiナノワイヤへのNiシリサイド形成と過剰な侵入とその抑制に関する検討",,"電子情報通信学会技術研究報告 pp.17-22",,,,,2010,June
"佐藤創志,新井英朗,角嶋邦之,パールハットアヘメト,大毛利 健治,名取研二,岩井洋,山田啓作","Siナノワイヤトランジスタの電気特性の断面形状依存症","第57回応用物理学関係連合講演会","第57回応用物理学関係連合講演会講演予稿集",,,,"pp. 13-270",2010,Apr.
"ダリューシュ ザデ,佐藤創志,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","界面にLa2O3 絶縁膜層を挿入したHf系high-kゲートMOSFETの評価","第57回応用物理学関係連合講演会","第57回応用物理学関係連合講演会講演予稿集",,,,"pp. 13-095",2010,Mar.
"茂森直登,新井英朗,佐藤創志,角嶋邦之,パールハットアヘメト,西山彰,筒井一生,杉井信之,名取研二,服部健雄,岩井洋","酸化膜中のSiナノワイヤへのNi拡散の制御","第57回応用物理学関係連合講演会","第57回応用物理学関係連合講演会講演予稿集",,,,"pp. 13-269",2010,Mar.
"佐藤創志,角嶋邦之,パールハットアヘメト,大毛利健治,山田啓作,名取研二,岩井洋","Influence of the cross-sectional shape for Si nanowire FETs","複合創造領域シンポジウム",,,,,,2010,
"茂森直登,佐藤創志,角嶋邦之,パールハットアヘメト,西山彰,筒井一生,杉井信之,名取研二,服部健雄,岩井洋","Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation","複合創造領域シンポジウム",,,,,,2010,
"小山将央,茂森直登,新井英朗,佐藤創志,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","Lateral encroachment of Ni silicide into Si nanowire","複合創造領域シンポジウム",,,,,,2010,
"中島一裕,佐藤創志,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","Interface state density of 3-D structured Si using charge pumping method","複合創造領域シンポジウム",,,,,,2010,
"呉研,茂森直登,佐藤創志,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface","複合創造領域シンポジウム",,,,,,2010,
"Soshi Sato,Hideaki Arai,Kuniyuki KAKUSHIMA,Ahmet Parhat,HIROSHI IWAI","Evaluation of Channel Potential Profile of Si Nanowire Field Effect Transistor","G-COE PICE International Symposium on Silicon Nano Devices",,,,,,2009,Oct.
"Hideaki Arai,Hideyuki Kamimura,Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,西山彰,KAZUO TSUTSUI,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Annealing Reaction for Ni Silicidation of Si Nanowire","G-COE PICE International Symposium on Silicon Nano Devices",,,,,,2009,Oct.
"Hideaki Arai,Hideyuki Kamimura,Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Annealing Reaction for Ni Silicidation of Si Nanowire","ECS 216th Meeting",,,"vol. 25","No. 7","pp. 447-454",2009,Oct.
"Soshi Sato,Hideyuki Kamimura,Hideaki Arai,Kuniyuki KAKUSHIMA,Ahmet Parhat,Kenji Ohmori,Keisaku Yamada,HIROSHI IWAI","High-Performance Si Nanowire FET with a Semi Gate-Around Structure Suitable for Integration","ESSDERC 2009, 39th European Solid-State Device Research Conference",,,,,"p. 249",2009,Sept.
"岩井洋,山田啓作,大毛利健二,筒井一生,角嶋邦之,パールハットアヘメト,佐藤創志,上村英之,新井英朗","トップダウンSiナノワイヤFETの作製法とその電気的特性のサーベイ","第56回応用物理学関係連合講演会","第56回応用物理学関係連合講演会予稿集","応用物理学会",,"No. 0","pp. 147",2009,Mar.
"新井英朗,上村英之,佐藤創志,角嶋邦之,パールハットアヘメト,筒井一生,杉井信之,服部健雄,岩井洋","SiナノワイヤへのNiシリサイド形成の評価","第56回応用物理学関係連合講演会","第56回応用物理学関係連合講演会予稿集","応用物理学会",,"No. 2","pp. 901",2009,Mar.
"佐藤創志,上村英之,新井英朗,角嶋邦之,パールハットアヘメト,大毛利健二,筒井一生,杉井信之,服部健雄,山田啓作,岩井洋","四端子測定TEGを用いたSiナノワイヤトランジスタのチャネル内電位の測定","第56回応用物理学関係連合講演会","第56回応用物理学関係連合講演会予稿集","応用物理学会",,"No. 2","pp. 901",2009,Mar.
"Hideyuki Kamimura,Hideaki Arai,Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Evaluation of Lateral Ni Diffusion in Si Nanowire Schottky Contact","ISTC /CSTIC2009","ISTC /CSTIC2009",,,,"pp. 58",2009,Mar.
"Kuniyuki KAKUSHIMA,Kiichi Tachi,Jaeyeol Song,Soshi Sato,Hiroshi Nohira,E. Ikenaga,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film",,"JOURNAL OF APPLIED PHYSICS","[ 145]	K. Kakushima, K. Tachi K, J. Song, S. Sato, H. Nohira, E. Ikenaga, P. Ahmet, K.Tsutsui,   N. Sugii, T.Hattori, H. Iwai, “Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film”, JOURNAL OF APPLIED PHYSICS, Vol.106, 2009","Vol. 106",,,2009,
"佐藤創志,上村英之,新井英朗,大毛利健二,角嶋邦之,パールハットアヘメト,筒井一生,服部健雄,杉井信之,山田啓作,岩井洋","Si Finのアスペクト比最適化により作製した円形Siナノワイヤの形状に関する研究","秋季第69回応用物理学会学術講演会","秋季第69回応用物理学会学術講演会予稿集","応用物理学会",,"No. 2","pp. 735",2008,Sept.
"新井英朗,上村英之,佐藤創志,角嶋邦之,パールハットアヘメト,筒井一生,服部健雄,杉井信之,岩井洋","熱酸化によるSi ナノワイヤの作製とその電気特性","秋季第69回応用物理学会学術講演会","応用物理学会学術講演会予稿集","応用物理学会",,"No. 2","pp. 768",2008,Sept.
"岡本晃一,舘喜一,足立学,佐藤創志,角嶋邦之,パールハットアヘメト,杉井信之,筒井一生,服部健雄,岩井洋","Hf O2系 High-kゲートMOSFETの電気特性に対するLa2O3界面層挿入効果","春季第55回応用物理学会学術講演会","春季第55回応用物理学会学術講演会 予稿集","応用物理学会",,"No. 2","pp. 848",2008,Mar.
"足立学,岡本晃一,舘喜一,佐藤創志,角嶋邦之,パールハットアヘメト,筒井一生,杉井信之,服部健雄,岩井洋","HfO2/ La2O3積層キャパシタにおけるLa2O3層に依存した界面層成長抑制の効果","春季第55回応用物理学会学術講演会","春季第55回応用物理学会学術講演会予稿集","応用物理学会",,"No. 2","pp. 849",2008,Mar.
"佐藤創志,舘喜一,宋在烈,角嶋邦之,パールハットアヘメト,筒井一生,杉井信之,服部健雄,岩井洋","ラジカル窒化によるLa<sub>2O</sub>3ゲート絶縁膜への窒素導入効果 : 堆積時窒化によるEOT増加抑制効果（ゲート絶縁膜、容量膜、機能幕及びメモリ技術）",,"電子情報通信学会技術研究報告、SDM、シリコン材料・デバイス","電子情報通信学会","Vol. 107","No. 85","pp. 71-74",2007,May
"Soshi Sato,Kiichi Tachi,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Thermal-stability improvement of LaON thin film formed using nitrogen radicals",,"Microelectronic Engineering",,"Vol. 84",,"pp. 1894-1897",2007,