"ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ,大嶺洋,角嶋邦之,岩井洋","Highly Scalable La2O３/InGaAs Gate Stack with Low Interface State Density","最先端研究開発支援プログラム(FIRST)採択課題「グリーン・ナノエレクトロニクスのコア技術開発」最終成果報告会",,,,,,2014,
"大嶺洋,ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ,角嶋邦之,岩井洋","La2O３ gate dielectrics for InGaAs channel using ALD process","最先端研究開発支援プログラム(FIRST)採択課題「グリーン・ナノエレクトロニクスのコア技術開発」最終成果報告会",,,,,,2014,
"ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ,大嶺洋,岩井洋","低界面準位とsub-nm CETを有するLa2O３/ In0.53Ga0.47Asゲートスタックの実現","第61回応用物理学会春季学術講演会",,,,,,2014,
"ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ,大嶺洋,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","低界面準位とsub-nm CETを有するLa2O３/ In0.53Ga0.47Asゲートスタックの実現","第61回応用物理学会春季学術講演会",,,,,,2014,
"大嶺洋,ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ,角嶋邦之,西山彰,杉井信之,片岡好則,若林整,筒井一生,名取研二,岩井洋","La2O３/ InGaAs界面ラフネスに及ぼすALDプロセスの影響","第61回応用物理学会春季学術講演会",,,,,,2014,
"ダリューシュザデ,Hiroshi Oomine,Kuniyuki KAKUSHIMA,HIROSHI IWAI","Highly Scalable La2O3 /InGaAs Gate Stack with Low Interface State Density","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"Hiroshi Oomine,DARYOUSH ZADEH,Kuniyuki KAKUSHIMA,Akira Nishiyama,Nobuyuki Sugii,片岡好則,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Effect of pretreatment for high-/k//InGaAs interface property","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"DARYOUSH ZADEH,Hiroshi Oomine,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Low DitHigh-k/In0.53Ga0.47As Gate Stack with CET down to 0.73 nm and Thermally Stable Silicide Contact by Suppression of Interfacial Reaction","IEDM 2013",,,,,,2014,
"Hiroshi Oomine,DARYOUSH ZADEH,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Electrical characterization of atomic layer deposited La2O3 films on In0.53Ga0.47AAs substrates","ECS 224nd Meeting","ECS Transactions",,"Vol. 58","No. 7","pp. 385-389",2013,Oct.
"DARYOUSH ZADEH,Hiroshi Oomine,Yuya Suzuki,Kuniyuki KAKUSHIMA,パールハットアヘメト,Hiroshi Nohira,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode",,"Solid-State Electronics",,"Vol. 82",,"pp. 29-33",2013,Apr.
"DARYOUSH ZADEH,Hiroshi Oomine,Yuya Suzuki,Kuniyuki KAKUSHIMA,Hiroshi Nohira,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode",,,,,,,2013,
"Hiroshi Oomine,ダリューシュザデ,Yuya Suzuki,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Hiroshi Oomine,ダリューシュザデ,Yuya Suzuki,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"ダリューシュザデ,Hiroshi Oomine,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density","2013 International Conference on Solid State Devices and Materials(SSDM)",,,,,,2013,
"鹿国強,大嶺洋,ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ,角嶋邦之,西山彰,杉井信之,片岡好則,若林整,筒井一生,名取研二,岩井洋","ALD堆積条件によるLa2O３/In0.53Ga0.47Asキャパシタの電気特性への影響","第74回応用物理学会秋季学術講演会",,,,,,2013,
"Yuya Suzuki,ダリューシュザデ,Hiroshi Oomine,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface Engineering of La2O3/InGaAs Capacitors with High Temperature Stability","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,