"Junichi Hasegawa","Study of the influence of crystal defects and interface traps on SiC power device characteristics",,,,,,,2017,Mar.
"Junichi Hasegawa","Study of the influence of crystal defects and interface traps on SiC power device characteristics",,,,,,,2017,Mar.
"Junichi Hasegawa","Study of the influence of crystal defects and interface traps on SiC power device characteristics",,,,,,,2017,Mar.
"Junichi Hasegawa","Study of the influence of crystal defects and interface traps on SiC power device characteristics",,,,,,,2017,Mar.
"Junichi Hasegawa,Loris Pace,Luong Vi?t Phung,Mutsuko Hatano,Dominique Planson","Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation",,"IEEE TRANSACTIONS ON ELECTRON DEVICES",,"Vol. 64","No. 3","pp. 1203-1208",2017,Feb.
"Junichi Hasegawa,Loris Pace,Luong Vi?t Phung,Mutsuko Hatano,Dominique Planson","Simulation-based study on the optical beam intensity dependence of the optically triggered 4H-SiC thyristors turn-on operation","SSDM2016",,,,,,2016,Sept.
"清水 麻希,牧野 俊晴,Amici Renato Goes,岩崎 孝之,長谷川 淳一,田原 康佐,成木 航,加藤 宙光,竹内 大輔,山崎 聡,波多野 睦子","ダイヤモンドnin接合におけるNVセンタの電荷状態の制御","第63回応用物理学会春季学術講演会",,,,,,2016,Mar.
"M. Shimizu,T. Makino,T. Iwasaki,J. Hasegawa,K. Tahara,W. Naruki,H. Kato,S. Yamasaki,M. Hatano","Charge state modulation of nitrogen vacancy centers in diamond by applying a forward voltage across a p-i-n junction",,"Diamond Relat. Mater.",,"Vol. 63",,"pp. 192-196",2016,Mar.
"国崎 愛子,長谷川 淳一,岩崎 孝之,野口 宗隆,古橋 壮之,渡邊 寛,中田 修平,小寺 哲夫,波多野 睦子","界面準位密度を考慮したSiC-MOSFET伝達特性モデルの構築","第63回応用物理学会春季学術講演会",,,,,,2016,Mar.
"M.Shimizu,T.Makino,R.G.Amici,T.Iwasaki,J.Hasegawa,K.Tahara,W.Naruki,H.Kato,D.Takeuchi,S.Yamasaki,M.Hatan","Charge state modulation of nitrogen vacancy center in diamond n-i-n junction","Hasselt Diamond Workshop 2016",,,,,,2016,Mar.
"J. Hasegawa,T. Iwasaki,T. Kodera,M. Hatano","Measurement of the SiO2/SiC interface state density in a wide energy-level range using capacitance transient spectroscopy","The Fourth International Education Forum on Environment and Energy Science(ACEEES)",,,,,,2015,Dec.
"清水麻希,牧野俊晴,岩崎孝之,長谷川淳一,田原康佐,成木 航,加藤宙光,山崎 聡,波多野睦子","ダイヤモンドp-i-n接合におけるNVセンタの電荷状態の変化","第２９回ダイヤモンドシンポジウム",,,,,,2015,Nov.
"Junichi Hasegawa,Munetaka Noguchi,Masayuki Furuhashi,Shuhei Nakata,Takayuki Iwasaki,Tetsuo Kodera,Tadashi Nishimura,Mutsuko Hatano","Measurement of the SiO2/SiC interface state density in a wid energy-level range using capacitance transient spectroscopy","16th ICSCRM2015",,,,,,2015,Oct.
"M.Shimisu,T.Makino,T.Iwasaki,J.Hasegawa,K.Tahara,W.Naruki,H.Kato,S.Yamasaki,M.Hatano","Fabrication of n-p-n junctions for stable negatively charged nitrogen vacancy centers","9th International Conference on New Diamond and Nano Carbons 2015",,,,,,2015,May
"J. Hasegawa,M. Furuhashi,S. Nakata,T. Iwasaki,T. Kodera,T. Nishimura,M. Hatano,M  Noguchi","Analysis of effect of gate oxidation at SiC MOS interface on  threshold-voltage shift using deep-level transient spectroscopy",,"Jpn. J. Appl. Phys.",,"Vol. 54",,"pp. 04DP05",2015,Jan.
"J. Hasegawa,T. Kodera,T. Iwasaki,M. Hatano","Effect of Gate Oxide Process at SiC-MOS Interface on Threshold Voltage Shift Analyzed by DLTS","The Third International Education Forum on Environment and Energy Science",,,,,,2014,Dec.
"長谷川淳一,須藤建瑠,岩崎孝之,小寺哲夫,古橋壮之,野口宗隆,中田修平,西村正,波多野睦子","DLTS法による窒化後酸化SiC-MOSFETの界面準位評価","第75回応用物理学会秋季学術講演会",,,,,,2014,Sept.
"J. Hasegawa,M.Noguchi,M.Furuhashi,S. Nakata,T.Iwasaki,T.Kodera,T.Nishimura,M.Hatano","Effect of gate oxide process at SiC-MOS interface on threshold voltage shift analyzed by DLTS","SSDM 2014",,,,,,2014,Sept.
"長谷川淳一,野口宗隆,中田修平,須藤建瑠,岩崎孝之,小寺哲夫,古橋壮之,西村正,波多野睦子","DLTS法による窒化後酸化SiC-MOSFETの界面準位評価","第75回応用物理学会秋季学術講演会",,,,,,2014,Sept.
"J. Hasegawa,M. Noguchi,M. Furuhashi,S. Nakata,T. Iwasaki,T. Kodera,T. Nishimura,M. Hatano","Effect of Gate Oxide Process at SiC-MOS Interface on Threshold Voltage Shift Analyzed by DLTS","2014 International Conference on Solid State Devices and Materials (SSDM 2014)",,,,,,2014,Sept.
"J.Hasegawa,K.Konishi,Y.Nakamura,K.Otsuka,S.Nakata,Y. Nakamine,T. Nishimura,M. Hatano","Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation",,"Materials Science Forum",,"Vol. 828",,"pp. 778-780",2014,Feb.
"J. Hasegawa,T. Iwasaki,M. Hatano","Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation","The Second International Education Forum on Environment and Energy Science (ACEEES)",,,,,,2013,Dec.
"J. Hasegawa,K.Konishi,Y.Nakamura,K.Otsuka,Y.Nakamine,T.Nishimura,M.Hatano","Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation","ICSCRM2013",,,,,,2013,Oct.