"ダリューシュザデ,Hiroshi Oomine,Kuniyuki KAKUSHIMA,HIROSHI IWAI","Highly Scalable La2O3 /InGaAs Gate Stack with Low Interface State Density","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"ダリューシュザデ,Hiroshi Oomine,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density","2013 International Conference on Solid State Devices and Materials(SSDM)",,,,,,2013,
"Hiroshi Oomine,ダリューシュザデ,Yuya Suzuki,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Hiroshi Oomine,ダリューシュザデ,Yuya Suzuki,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Yuya Suzuki,ダリューシュザデ,Hiroshi Oomine,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface Engineering of La2O3/InGaAs Capacitors with High Temperature Stability","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Yuya Suzuki,ダリューシュザデ,Ryuji Hosoi,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical characteristics of La2O3/In0.53Ga0.47AAs capacitors with surface nitridation","15th International Conference on Thin Films",,,,,,2013,
"Ryuji Hosoi,Yuya Suzuki,ダリューシュザデ,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,杉井信之,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"Kuniyuki KAKUSHIMA,Yuya Suzuki,ダリューシュザデ,Takamasa Kawanago,HIROSHI IWAI","Development of Core Technologies for Green Nanoelectronics","International Symposium on “Development of Core Technologies for Green Nanoelectronics”",,,,,,2012,
"Yuya Suzuki,ダリューシュザデ,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Effect of In0.53Ga0.47AAs surface nitridation on electrical characteristics of high-k/capacitors","ECS 222nd Meeting","ECS Transactions",,"Vol. 50","No. 4","pp. 145-150",2012,
"ダリューシュザデ,Takashi Kanda,山下晃司,Kuniyuki KAKUSHIMA,Hiroshi Nohira,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on Ino.53Ga.0.47As Substrate with Different Surface Treatment Methods",,"Japanese Journal of Applied Physics",,"Vol. 50","No. 10","pp. 10PD03-1-4",2011,Oct.
"ダリューシュザデ,Kuniyuki KAKUSHIMA,Takashi Kanda,Y.C.Lin,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,E.Y.Chang,KENJI NATORI,takeo hattori,HIROSHI IWAI","Improving electrical characteristics of W/HfO2/Ino.53Gao.47As gate stacks by altering deposition techniques",,"Microelectronic Engineering",,"Vol. 88","No. 7","pp. 1109-1112",2011,July
"Takashi Kanda,ダリューシュザデ,Y. C. Lin,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,E.Y. Chang,KENJI NATORI,takeo hattori,HIROSHI IWAI","Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors","CSTIC2011",,,,,,2011,
"ダリューシュザデ,Takashi Kanda,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Effects of In0.53Ga0.47As Surface Preparation on MOS Device Electrical Characterization","2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11)",,,,,,2011,
"鈴木佑哉,細井隆司,ダリューシュザデ,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","high-k/In0.53Ga0.47As MOS キャパシタの容量-電圧特性の解析","第72回応用物理学会学術講演会",,,,,,2011,
"沢尻 侑也,山下晃司,小松 新,ダリューシュザデ,角嶋邦之,岩井洋,野平博司","AR-XPSによる(NH４) ２S処理したIn0.53Ga0.47As表面の化学結合状態の評価","第72回応用物理学会学術講演会",,,,,,2011,
"細井隆司,神田高志,ダリューシュザデ,Yueh Chin Lin,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,Edward Yi Chang,名取研二,服部健雄,岩井洋","絶縁膜材料を用いたIn0.53Ga0.47As MOSキャパシタの電気特性","第７１回応用物理学会学術講演会",,,,,,2010,Sept.
"竇 春萌,マイマイティ  マイマイティレャアティ,ダリューシュザデ,佐藤創志,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","希土類(Ce,Eu)酸化物MIM構造の抵抗スイッチング特性","第７１回応用物理学会学術講演会",,,,,,2010,Sept.
"ダリューシュ ザデ,佐藤創志,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","界面にLa2O3 絶縁膜層を挿入したHf系high-kゲートMOSFETの評価","第57回応用物理学関係連合講演会","第57回応用物理学関係連合講演会講演予稿集",,,,"pp. 13-095",2010,Mar.
"ダリューシュザデ,神田高志,細井隆司,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","Towards High Performance III-V MOSFET, A Study on high-k Gate Stacks on In0.53Ga0.47As","複合創造領域シンポジウム",,,,,,2010,