"W. Feng,R. Hettiarachchi,Yeonghun Lee,Soshi Sato,Kuniyuki KAKUSHIMA,M. Sato,K. Fukuda,M. Niwa,K. Yamabe,Kenji Shiraishi,HIROSHI IWAI","Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ~Impact of charge-centroid in the channel due to quantum effect on 1/f noise ~","2011 IEDM",,,,,,2013,