"J. Hasegawa,M. Furuhashi,S. Nakata,T. Iwasaki,T. Kodera,T. Nishimura,M. Hatano,M  Noguchi","Analysis of effect of gate oxidation at SiC MOS interface on  threshold-voltage shift using deep-level transient spectroscopy",,"Jpn. J. Appl. Phys.",,"Vol. 54",,"pp. 04DP05",2015,Jan.