"Kuniyuki KAKUSHIMA,Koichi Okamoto,Tomotsune Koyanagi,Miyuki Kouda,Kiichi Tachi,Takamasa Kawanago,Jaeyeol Song,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Selection of rare earth silicates for highly scaled gate dielectrics",,"Microelectronic Engineering",,"Vol. 87","No. 10","pp. 1868-1871",2010,Oct.
"Kuniyuki KAKUSHIMA,Kiichi Tachi,M.Adachi,Koichi Okamoto,Soshi Sato,Jaeyeol Song,Takamasa Kawanago,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Interface and electrical properties of La-silicate for direct contact of high-k with silicon",,"Solid-State Electronics",,"Vol. 54",,"pp. 715-719",2010,June
"Kuniyuki KAKUSHIMA,Koichi Okamoto,Tomotsune Koyanagi,Miyuki Kouda,Kiichi Tachi,Takamasa Kawanago,Jaeyeol Song,Ahmet Parhat,Hiroshi Nohira,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","SrO capping effect for La2O3/ Ce-Silicate gate dielectrics",,"Microelectronics Reliability 50",,,,"pp. 356-359",2010,Mar.
"Tomotsune Koyanagi,Koichi Okamoto,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,AKIRA NISHIYAMA,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Impact of Alkali Earth Elements Incorporation on Electrical Characteristics of La2O3 Gated MOS Device","ECS 216th Meeting",,,"vol. 25","No. 6","pp. 17-22",2009,Oct.
"Kuniyuki KAKUSHIMA,Koichi Okamoto,Tomotsune Koyanagi,Kiichi Tachi,Miyuki Kouda,Takamasa Kawanago,Jaeyeol Song,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Selection of Rare Earth Silicate with SrO Capping for EOT Scaling below o.5 nm","ESSDERC 2009, 39th European Solid-State Device Research Conference",,,,,"p. 403",2009,Sept.
"小柳友常,岡本晃一,角嶋邦之,パールハットアヘメト,杉井信之,筒井一生,服部健雄,岩井洋","La2O3MOSデバイスへのSrO導入による電気特性の変化","第56回応用物理学関係連合講演会","第56回応用物理学関係連合講演会予稿集","応用物理学会",,"No. 2","pp. 854",2009,Mar.
"Tomotsune Koyanagi,Kiichi Tachi,Koichi Okamoto,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation",,"Japanese Journal of Applied Physics",,"Vol. 48",,,2009,
"K. Okamoto,K. Kakushima,P. Ahmet,K. Tsutsui,N. Sugii,A. Chandorkar,T. Hattori,H. Iwai","0.5 nm EOT MOS Structure with TaSix/W Stacked Gate Electrode","214th ECS Meeting (PRiME 2008)",,,,,,2008,Oct.
"小柳友常,岡本晃一,角嶋邦之,パールハットアヘメト,杉井信之,筒井一生,服部健雄,岩井洋","La203系MOSFETへのMg挿入による電気特性の変化","秋季第69回応用物理学会学術講演会","秋季第69回応用物理学会学術講演会予稿集","応用物理学会",,"No. 2","pp. 702",2008,Sept.
"K. Kakushima,K. Tachi,M. Adachi,K. Okamoto,S. Sato,J. Song,T. Kawanago,P. Ahmet,K. Tsutsui,N. Sugii,T. Hattori,H. Iwai","Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment","the 38th European Solid-State Device Research Conference (ESSDERC2008)",,,,,,2008,Sept.
"K. Kakushima,K. Okamoto,M. Adachi,K. Tachi,S. Sato,T. Kawanago,J. Song,P. Ahmet,N. Sugii,K. Tsutsui,T. Hattori,H. Iwai","Impact of Thin La2O3 Insertion for HfO2 MOSFET","213th ECS Meeting",,,,,,2008,May
"岡本晃一,舘喜一,足立学,佐藤創志,角嶋邦之,パールハットアヘメト,杉井信之,筒井一生,服部健雄,岩井洋","Hf O2系 High-kゲートMOSFETの電気特性に対するLa2O3界面層挿入効果","春季第55回応用物理学会学術講演会","春季第55回応用物理学会学術講演会 予稿集","応用物理学会",,"No. 2","pp. 848",2008,Mar.
"足立学,岡本晃一,舘喜一,佐藤創志,角嶋邦之,パールハットアヘメト,筒井一生,杉井信之,服部健雄,岩井洋","HfO2/ La2O3積層キャパシタにおけるLa2O3層に依存した界面層成長抑制の効果","春季第55回応用物理学会学術講演会","春季第55回応用物理学会学術講演会予稿集","応用物理学会",,"No. 2","pp. 849",2008,Mar.
"宋在烈,舘喜一,岡本晃一,角嶋邦之,パールハットアヘメト,筒井一生,杉井信之,服部健雄,岩井洋","Laシリケート層を界面に用いたhigh-k/Si MOS構造の電気特性検討","春季第55回応用物理学会学術講演会","春季第55回応用物理学会学術講演会予稿集","応用物理学会",,"No. 2","pp. 849",2008,Mar.
"M.Adachi,K.Okamoto,K.Kakushima,P.Ahmet,K.Tsutsui,N.Sugii,T.Hattori,H.Iwai","Control of Flat Band Voltage by Partial Incorporation of  La2O3  or Sc2O3 into MfO2  in Metal/MfO2/SiO2/Si MOS Capacitors",,"ECS Transactions:Physics and Technology of High-k Gate Dielectrics 5","The Electrochemikal Society","Vol. 11","No. 4","pp. 157-167",2007,Oct.