"M. Shimura,T. Shirasawa,R. Ushioda,K. Nakatsuji,H. Hirayama","Growth kinetics of a perfectly flat Bi(110) film during low-temperature deposition and subsequent annealing",,"Surface Science",,"Volume 728",,"  122210",2023,Feb.
"R. Ushioda,M. Shimura,K. Nakatsuji,H. Hirayama","Growth-rate dependence of the structural transition of bismuth islands on Si(111) substrates",,"Physical Review Materials",,"Vol. 6",,"p. 043403(10pages)",2022,Apr.
"志村舞望,潮田亮太,中辻寛,平山博之","二段階成長における平坦な黒燐構造Bi(110)超薄膜の成長過程","日本物理学会第76回年次大会",,,,,,2022,Mar.
"大内拓実,長尾俊祐,中村玲雄,竹村晃一,志村舞望,潮田亮太,飯盛拓嗣,小森文夫,平山博之,中辻寛","Si(111)√3×√3-B 表面上のBi(110)超薄膜の電子状態における基板依存性","日本物理学会第76回年次大会",,,,,,2022,Mar.
"Maimi Shimura,Ryota Ushioda,Kan Nakatsuji,Hiroyuki Hirayama","Nucleation of ultrathin Bi(110) film on the Si(111)√3×√3-B substrate in the two step growth","The 9th International Symposium on Surface Science (ISSS9)",,,,,,2021,Nov.
"大内拓実,中村玲雄,竹村晃一,志村舞望,潮田亮太,飯盛拓嗣,小森文夫,平山博之,中辻寛","Si(111)√3×√3-B表面上のBi(110)超薄膜の電子状態","2021年日本表面真空学会学術講演会",,,,,,2021,Nov.
"T. Ouchi,L. Nakamura,K. Takemura,M. Shimura,R. Ushioda,T. Iimori,F. Komori,H. Hirayama,K. Nakatsuji","Electronic structure of Bi(110) ultra-thin films grown on n-type Si(111)√3×√3-B substrates","13th International Symposium on Atomic Level Characterization for New Materials and Devices (ALC’21)",,,,,,2021,Oct.
"志村舞望,潮田亮太,中辻寛,平山博之","Si基板上における低温蒸着した黒燐構造Bi超薄膜の室温アニールによる成長過程","日本物理学会2021年秋季大会",,,,,,2021,Sept.
"志村 舞望,潮田 亮太,中辻 寛,平山 博之","Si(111)表面上における黒リン構造Bi(110)超薄膜の低温蒸着による成長過程","日本物理学会第76回年次大会",,,,,,2021,Mar.
"潮田 亮太,志村 舞望,笠井 大雅,笹川 直希,長瀬 謙太郎,中辻 寛,平山 博之","黒燐構造Bi 超薄膜の成長過程と構造相転移の蒸着レート制御","日本物理学会第76回年次大会",,,,,,2021,Mar.