"‘匩�rˆê˜Y","�¬�»‰»‚É‚æ‚éPtSi‚̃Rƒ“ƒ^ƒNƒg’ï�R’ጸ‚ÉŠÖ‚·‚錟“¢",,"“dŽq�î•ñ’Ê�MŠw‰ï‹Z�pŒ¤‹†•ñ��. SDM, ƒVƒŠƒRƒ“�Þ—¿�EƒfƒoƒCƒX","ˆê”ÊŽÐ’c–@�l“dŽq�î•ñ’Ê�MŠw‰ï","Vol. 111","No. 249","pp. 59-62",2011,Oct.
"Shun-ichiro OHMI,Gao, J.","Low contact resistivity of barrier height controlled PtHfSi to Si evaluated by cross-bridge Kelvin resistor",,"IEICE Electronics Express",,"Vol. 8","No. 20","pp. 1710-1715",2011,
"Sano, T.,Shun-ichiro OHMI","Selective etching of HfN gate electrode for HfN/HfSiON gate stack in-situ formations",,"IEICE Electronics Express",,"Vol. 8","No. 18","pp. 1492-1497",2011,
"Gao, J.,Ishikawa, J.,Shun-ichiro OHMI","A study on precise control of PtSi work function by alloying with Hf",,"IEICE Electronics Express",,"Vol. 8","No. 1","pp. 45-49",2011,
"Liao, M.,Ishiwara, H.,Shun-ichiro OHMI","Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator",,"IEICE Electronics Express",,"Vol. 8","No. 18","pp. 1461-1466",2011,
"Ishikawa, J.,Gao, J.,Shun-ichiro OHMI","Work function modulation of PtSi by alloying with Yb",,"IEICE Electronics Express",,"Vol. 8","No. 1","pp. 33-37",2011,