"Y. M. Lei,T. Kaneko,H. Wakabayashi,K. Tsutsui,H. Iwai,K. Kakushima,M. Furuhashi,S. Tomohisa,S. Yamakawa","Influence of Interface ALD-SiO2 Layer for Lanthanum Silicate Gate Dielectrics for 4H-SiC MOS Capacitors","47th IEEE Semiconductor Interface Specialists Conference (SISC2016)",,,,,,2016,Dec.
"Tomoyuki Suzuki,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Hiroshi Nohira,Kuniyuki Kakushima","Properties of SiC Schottky Junction with Laminated Molybdenum/Carbon Electrode","47th IEEE Semiconductor Interface Specialists Conference (SISC2016)",,,,,,2016,Dec.
"K. Kakushima,T. Hoshii,K. Tsutsui,A. Nakajima,S. Nishizawa,H. Wakabayashi,I. Muneta,K. Sato,T. Matsudai,W. Saito,T. Saraya,K. Itou,M. Fukui,S. Suzuki,M. Kobayashi,T. Takakura,T. Hiramoto,A. Ogura,Y. Numasawa,I. Omura,H. Ohashi,H. Iwai","Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT","62th International Electron Devices Meeting (IEDM2016)",,,,,"p. 268",2016,Dec.
"Y. Ikeuchi,T. Hoshii,H. Wakabayashi,K. Tsutsui,H. Iwai,K. Kakushima,S.Ishikawa","Characteristics of Fe/pGaN Contact upon Annealing Process","47th IEEE Semiconductor Interface Specialists Conference (SISC2016)",,,,,,2016,Dec.
"安重 英祐,大橋 匠,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","Accumulation-Mode積層型ナノワイヤCMOSデバイスのチャネル不純物濃度およびゲート電極仕事関数の依存性","第77回応用物理学会秋季学術講演会",,,,,,2016,Sept.
""R. Miyazawa","H. Wakabayashi","K. Tsutsui","H. Iwai","K. Kakushima"","Photovoltaic Characteristics of Ultra-thin Single Crystalline Silicon Solar Cells",,"International Journal of High Speed Electronics and Systems (IJHSES)",,"Vol. 25","No. 1-2","Page 1640008(7pages)",2016,Sept.
"J. Shimizu,T. Ohashi,K. Matsuura,I. Muneta,K. Kakushima,K. Tsutsui,H. Wakabayashi","High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming-Gas Annealing for 3D-IC","International Conference on Solid State Devices and Materials",,,,,,2016,Sept.
""M.S. Hadi","N. Sugii","H. Wakabayashi","K. Tsutsui","H. Iwai","K. Kakushima"","Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes",,"Microelectronics Reliability",,"Vol. 63",,"pp. 42-45",2016,Aug.
"Akira Nakajima,Shunsuke Kubota,Kazuo Tsutsui,Kuniyuki Kakushima,Hitoshi Wakabayashi,Hiroshi Iwai,Sin-ichi Nishizawa,Hiromichi Ohashi","Monolithic Integration of GaN-based Normally-off P- and N-channel MOSFETs","13th International Seminar on Power Semiconductors (ISPS)",,,,,,2016,Aug.
""J. Chen","H. Wakabayashi","K. Tsutsui","H. Iwai","K. Kakushima"","Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current",,"Microelectronic Reliability",,"Vol. 63",,"pp. 52-55",2016,Aug.
""Tomoyuki Suzuki","Hitoshi Wakabayashi","Kazuo Tsutsui","Hiroshi Iwai","Kuniyuki Kakushima"","Laminated Mo/C Electrodes for 4H-SiC Schottky Barrier Diodes with Ideal Characteristics",,"IEEE Electron Device Letters (EDL)",,"Vol. 37","No. 5","pp. 618-620",2016,May
"Yusuke Takei,Kazuo Tsutsui,Wataru Saito,Kuniyuki Kakushima,Hitoshi Wakabayashi,Hiroshi Iwai","Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high electron mobility transistors",,"Japanese Journal of Applied Physics",,"Vol. 55","No. 4",,2016,Apr.
"K. Matsuura,T. Ohashi,I. Muneta,S. Ishihara,N. Sawamoto,K. Kakushima,K. Tsutsui,A. Ogura,H. Wakabayashi","Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film",,"Proc. of 47th IEEE Semiconductor Interface Specialists Conference (SISC)",,,,,2016,
"Y. Hibino,N. Sawamoto,K. Suda,T. Ohashi,K. Matsuura,H. Machida,M. Ishikawa,H. Sudoh,H. Wakabayashi,A. Ogura","Improving crystalline quality of sputtering-deposited MoS2 thin film by postdeposition sulfurization annealing using (t-C4H9)2S2",,"Japan Journal of Applied Physics",,"Vol. 55",,,2016,
""J. Chen","T. Kawanago","H. Wakabayashi","K. Tsutsui","H. Iwai","D. Nohata","H. Nohira","K. Kakushima"","La2O3 gate dielectrics for AlGaN/GaN HEMT",,"Microelectronics Reliability",,"Vol. 60",,"pp. 16-19",2016,
"米田 允俊,武田 さくら,田口 宗孝,松田 博之,大橋匠,清水 淳一,Artoni Kevin Roquero Ang,橋本 由介,深見 駿,田中 一光,岡本 隆志,江波戸 達哉,大門 寛,若林整,木下 豊彦","スパッタ法で作成されたMoS2薄膜のRHEEDと光電子分光による評価",,"表面科学学術講演会要旨集","公益社団法人 日本表面科学会","Vol. 36",,"pp. 164",2016,
"S. Ishihara,Y. Hibino,N. Sawamoto,K. Suda,T. Ohashi,K. Matsuura,H. Machida,M. Ishikawa,H. Sudoh,H. Wakabayashi,A. Ogura","Properties of single-layer MoS2 film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using (t-C4H9)2S2",,"Japan Journal of Applied Physics",,"Vol. 55",,,2016,
"S. Ishihara,Y. Hibino,N. Sawamoto,T. Ohashi,K. Matsuura,H. Machida,M. Ishikawa,H. Wakabayashi,A. Ogura","Large Scale Uniformity of Sputtering Deposited Single- and Few-Layer MoS2 Investigated by XPS Multipoint Measurements and Histogram Analysis of Optical Contrast",,"ECS J. Solid State Sci. Technol.",,"Vol. 5","No. 11",,2016,