"Y. Ikeuchi,T. Hoshii,H. Wakabayashi,K. Tsutsui,H. Iwai,K. Kakushima,S.Ishikawa","Characteristics of Fe/pGaN Contact upon Annealing Process","47th IEEE Semiconductor Interface Specialists Conference (SISC2016)",,,,,,2016,Dec.
"K. Kakushima,T. Hoshii,K. Tsutsui,A. Nakajima,S. Nishizawa,H. Wakabayashi,I. Muneta,K. Sato,T. Matsudai,W. Saito,T. Saraya,K. Itou,M. Fukui,S. Suzuki,M. Kobayashi,T. Takakura,T. Hiramoto,A. Ogura,Y. Numasawa,I. Omura,H. Ohashi,H. Iwai","Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT","62th International Electron Devices Meeting (IEDM2016)",,,,,"p. 268",2016,Dec.
"Hoshii Takuya,Naitoh Shunya,Okada Yoshitaka","Photoassisted impedance spectroscopy for quantum dot solar cells",,"Jpn. J. Appl. Phys.","Institute of Physics","Vol. 55","No. 4",,2016,Feb.
"Hoshii, T.,Naitoh, S.,Okada, Y.,Takuya Hoshii","Photoassisted impedance spectroscopy for quantum dot solar cells",,"Japanese Journal of Applied Physics",,"Vol. 55","No. 4",,2016,
"Tamayo, R.E.E.,Hoshii, T.,Tamaki, R.,Watanabe, K.,Sugiyama, M.,Okada, Y.,Miyano, K.,Takuya Hoshii","Maskless fabrication of broadband antireflection nanostructures on glass surfaces",,"Journal of Optics (United Kingdom)",,"Vol. 18","No. 6",,2016,
"Yamashita, D.,Watanabe, K.,Fujino, M.,Hoshii, T.,Okada, Y.,Nakano, Y.,Suga, T.,Sugiyama, M.,Takuya Hoshii","Admittance spectroscopy analysis on the interfacial defect levels in the surface-activated bonding of GaAs",,"Conference Record of the IEEE Photovoltaic Specialists Conference",,"Vol. 2016-November",,"pp. 2317-2319",2016,