"ダリューシュザデ,Takashi Kanda,山下晃司,Kuniyuki KAKUSHIMA,Hiroshi Nohira,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on Ino.53Ga.0.47As Substrate with Different Surface Treatment Methods",,"Japanese Journal of Applied Physics",,"Vol. 50","No. 10","pp. 10PD03-1-4",2011,Oct.
"Miyuki Kouda,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5nm",,"Japanese Journal of Applied Physics",,"Vol. 50","No. 10","pp. 10PA04-1-4",2011,Oct.
"来山大祐,久保田透,Tomotsune Koyanagi,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","[ 183]	D. Kitayama, T. Kubota, T. Koyonagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, “Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5nm* Adjustment of Amount of Residual Oxygen Atoms in Metal Layer”, Japanese Journal of Applied Physics, Vol.50, No.10, pp.10PA05-1-5, October, 2011",,"Japanese Journal of Applied Physics",,"Vol. 50","No. 10","pp. 10PA05-1-5",2011,Oct.
"Keita Takahashi,Yuji Hayashi,Ryosuke Kayanuma,Kazuo Tsutsui","Leakage Current Control of Fluoride Ultra-thin Films Grown on Ge Substrates","2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011)",,,,,,2011,Sept.
"Jun Kanehara,Youhei Miyata,Hiroshi Nohira,Yudai Izumi,Takayuki Muro,Toyohiko Kinoshita,Parhat Ahmet,Kuniyuki Kakushima,Kazuo Tsutsui,Takeo Hattori,Hiroshi Iwai","Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles","2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011)",,,,,,2011,Sept.
"Youhei Miyata,Jun Kanehara,Hiroshi Nohira,Yudai Izumi,Takayuki Muro,Toyohiko Kinoshita,Parhat Ahmet,Kuniyuki Kakushima,Kazuo Tsutsui,Takeo Hattori,Hiroshi Iwai","Soft X-ray Photoelectron Spectroscopy on Chemical Bonding States of Boron Doped in Si Fin Structures","2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011)",,,,,,2011,Sept.
"K. Kakushima,J. Kanehara,Y. Izumi,T. Muro,T. Kinoshita,P. Ahmet,K. Tsutsui,T. Hattori,H. Iwai","Concentration Depth Profiling of Heavily Doped Boron at and near SiO2/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy","2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011)",,,,,,2011,Sept.
"ダリューシュザデ,Kuniyuki KAKUSHIMA,Takashi Kanda,Y.C.Lin,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,E.Y.Chang,KENJI NATORI,takeo hattori,HIROSHI IWAI","Improving electrical characteristics of W/HfO2/Ino.53Gao.47As gate stacks by altering deposition techniques",,"Microelectronic Engineering",,"Vol. 88","No. 7","pp. 1109-1112",2011,July
"来山大祐,Tomotsune Koyanagi,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Effect of thin Si insertion at metal gate/high-k interface on electrical characteristics of MOS device with La2 O3",,"Microelectronic Engineering",,"Vol. 88","No. 7","pp. 1330-1333",2011,July
"Y. Y. Illarionov,M. I. Vexler,S. M. Suturin,V. V. Fedorov,N. S. Sokolov,K. Tsutsui,K. Takahashi","Electron Tunneling in MIS Capacitors with MBE Grown Fluoride Layers on Si(111) and Ge(111): Role of Transvers Momentum Conservation","17th Conference on Insulating Films on Semiconductors (INFOS-2011)",,,,,,2011,June
"DARYOUSH ZADEH,Soshi Sato,Kuniyuki KAKUSHIMA,A. Srivastava,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,C.K. Sarkar,HIROSHI IWAI","Effects of La2O3  incorporation in HfO2 gated nMOSFETs on low-frequency noise",,"Microelectronics Reliability",,"Vol. 51",,"pp. 746-750",2011,Apr.
"角嶋邦之,金原潤,筒井一生,服部健雄,岩井洋","高濃度ボロンドープ飼料の角度分解X線光電子分光による濃度分布解析","第72回応用物理学会学術講演会",,,,,,2011,
"松本一輝,小山将央,呉研,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","酸化膜被覆型SiナノワイヤおよびSi Fin構造におけるNiシリサイド成長機構の検討","第72回応用物理学会学術講演会",,,,,,2011,
"鈴木佑哉,細井隆司,ダリューシュザデ,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","high-k/In0.53Ga0.47As MOS キャパシタの容量-電圧特性の解析","第72回応用物理学会学術講演会",,,,,,2011,
"常石佳奈,来山大祐,幸田みゆき,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","W/Tm2O３/n-Si構造キャパシタの電気特性におけるTm2O３膜厚依存性","第72回応用物理学会学術講演会",,,,,,2011,
"Kamale Tuokedaerhan,金田翼,マイマイティ マイマイティレャアティ,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","La2O3/n-Si 構造に対するPost Deposition Annealの電気特性への影響","第72回応用物理学会学術講演会",,,,,,2011,
"関 拓也,来山大祐,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","High-k/Si 直接接合構造における界面準位の定量評価について","第72回応用物理学会学術講演会",,,,,,2011,
"田中 祐樹,川那子高暢,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","シリコン基板上に堆積したナノカーボン薄膜への高温短時間アニーリングの影響","第72回応用物理学会学術講演会",,,,,,2011,
"C. Dou,向井 弘樹,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Resistive switching behaviors of ReRAM having W/CeO2/Si/TiN structure","219th ECS Meeting",,,,,,2011,
"Ahmet Parhat,来山大祐,金田翼,鈴木 拓也,Tomotsune Koyanagi,Miyuki Kouda,マイマイティ マイマイティレャアティ,Takamasa Kawanago,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Effects of Metal Layer Insertion on EOT scaling in TiN/Metal/ La2O3 Si High ?k Gate Stacks",",219th ECS Meeting",,,,,,2011,
"Ahmet Parhat,来山大祐,金田翼,鈴木 拓也,Tomotsune Koyanagi,Miyuki Kouda,マイマイティ マイマイティレャアティ,Takamasa Kawanago,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","TiN/W/La2O3 /Si High-k Gate Stack for EOT below o.5nm","CSTIC2011",,,,,,2011,
"Takamasa Kawanago,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Metal Inserted Poly-Si Stacks with La2O3 Gate Dielectrics for Scaled EOT and VFB Control by Oxygen Incorporation","CSTIC2011",,,,,,2011,
"Takashi Kanda,ダリューシュザデ,Y. C. Lin,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,E.Y. Chang,KENJI NATORI,takeo hattori,HIROSHI IWAI","Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors","CSTIC2011",,,,,,2011,
"来山大祐,久保田 透,Tomotsune Koyanagi,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Precise Control of Silicate Reaction with La2O3 Gate Dielectrics towards Equivalent Oxide Thickness of 0.5 nm","Taiwan-Japan Workshop on “Nano Devices”",,,,,,2011,
"マイマイティ マイマイティレャアティ,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,HIROSHI IWAI","Remote-surface-roughness scattering-limited electron, mobility in ultrathin high-k gate stacked MOSFETs","Taiwan-Japan Workshop on “Nano Devices”",,,,,,2011,
"金田翼,Miyuki Kouda,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Effect of rare earth oxide capping for La-based gate oxides","Taiwan-Japan Workshop on “Nano Devices”",,,,,,2011,
"Takamasa Kawanago,鈴木 拓也,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","An effective process for oxygen defect suppression for La-based oxide gate dielectric","Taiwan-Japan Workshop on “Nano Devices”",,,,,,2011,
"中島一裕,Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Interface State Density Measurement of Three Dimensional Silicon Structures by Charge Pumping Method","Taiwan-Japan Workshop on “Nano Devices”",,,,,,2011,
"Naoto Shigemori,Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","An effective suppression process for Ni silicide enchroachment into Si nanowire","Taiwan-Japan Workshop on “Nano Devices”",,,,,,2011,
"ダリューシュザデ,Takashi Kanda,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Effects of In0.53Ga0.47As Surface Preparation on MOS Device Electrical Characterization","2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11)",,,,,,2011,
"Miyuki Kouda,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of CVD and ALD processes","2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11)",,,,,,2011,
"Miyuki Kouda,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Rare earth oxide capping effect on La2O3 gate dielectrics toward EOT of 0.5nm","2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11)",,,,,,2011,
"小山将央,Naoto Shigemori,Hideaki Arai,Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Lateral encroachment of Ni silicide into silicon nanowire","Taiwan-Japan Workshop on “Nano Devices”",,,,,,2011,
"竇春萌,Soshi Sato,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Si nanowire FET with asymmetric channel","Tsukuba Nanotechnology Symposium(TNS’11)",,,,,,2011,
"Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics","ECS  220th Meeting,ECS Transactions","ECS Transactions",,"Vol. 41","No. 7","pp. 119-124",2011,
"Miyuki Kouda,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics","ECS  220th Meeting","ECS Transactions",,"Vol. 41","No. 7","pp. 119-124",2011,
"細田倫央,李映勲,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,岩井洋","矩形断面SiナノワイヤMOSFETにおけるフォノン散乱に制限された移動度のサイズ依存性","第72回応用物理学会学術講演会",,,,,,2011,
"叶真一,MokhammadSholihul Hadi,竇春萌,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","希土類酸化物(CeOX)を用いたMIM構造の抵抗スイッチング特性","第72回応用物理学会学術講演会",,,,,,2011,
"LiWei,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","コンダクタンス法による立体チャネルを有するMOSキャパシタの界面準位密度の評価","第72回応用物理学会学術講演会",,,,,,2011,
"吉原 亮,角嶋邦之,パールハットアヘメト,中塚理,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","Ni/Si積層から形成されるNiシリサイドのショットキーダイオードの電流特性","第72回応用物理学会学術講演会",,,,,,2011,
"田村雄太,角嶋邦之,中塚 理,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","NiとSiの積層薄膜によって形成したシリサイドのシート抵抗に対する熱処理温度の影響","第72回応用物理学会学術講演会",,,,,,2011,
"金原潤,宮田陽平,秋田洸平,筒井一生,野平博司,室隆桂之,木下豊彦,パールハットアヘメト,角嶋邦之,服部健雄,岩井洋","Si中に極浅ドープされたAsの軟X線光電子分光による化学結合状態の検出とその深さ方向分布","第72回応用物理学会学術講演会",,,,,,2011,
"宮田陽平,金原潤,難波覚,三角元力,筒井一生,野平博司,室隆桂之,木下豊彦,角嶋邦之,パールハットアヘメト,服部健雄,岩井洋","軟X線光電子分光法を用いたFin構造中の不純物化学結合状態分析","第72回応用物理学会学術講演会",,,,,,2011,