"T. Kamale,R. Tan,K. Kakushima,P. Ahmet,Y. Kataoka,A. Nishiyama,N. Sugii,K. Tsutsui,K. Natori,T. Hattori,H. Iwai","Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT","PRiME 2012",,,,,,2012,Oct.
"Y. Tanaka,K. Kakushima,P. Ahmet,Y. Kataoka,A. Nishiyama,N. Sugii,K. Tsutsui,K. Natori,T. Hattori,S. Yamasaki,H. Iwai","TiC Electrode Formed by Multi-Stacking Process for Diamond Contact Metal","PRiME 2012",,,,,,2012,Oct.
"Takamasa Kawanago,Yeonghun Lee,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs",,"Solid-State Electronics",,"Vol. 74",,"pp. 2-6",2012,Aug.
"マイマイティ マイマイティレャアティ,久保田透,関拓也,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,片岡好則,西山彰,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Oxide and interface trap densities estimation in ultrathin W/ La2O3/Si MOS capacitors",,"Microelectronics Reliability",,"Vol. 52","No. 6","pp. 1039-1042",2012,June
"Youhei Miyata,Jun Kanehara,Hiroshi Nohira,Yudai Izumi,Takayuki Muro,Toyohiko Kinoshita,Parhat Ahmet,Kuniyuki Kakushima,Kazuo Tsutsui,Takeo Hattori1,Hiroshi Iwai","Analysis of Chemical Bonding States of Boron Doped in Si Fin Structures: Selective Observation on Top Surfaces and Sidewalls","12th Int. Workshop on Junction Technology (IWJT2012)",,,,,,2012,May
"C. Dou,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer",,"Microelectronics Reliability",,"Vol. 32","No. 4","pp. 688-691",2012,Apr.
"マイマイティ マイマイティレャアティ,Miyuki Kouda,Kuniyuki KAKUSHIMA,Hiroshi Nohira,Ahmet Parhat,片岡好則,西山彰,KAZUO TSUTSUI,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Valance number transition and silicate formation of cerrium oxide on Si(100)",,"Vacuum",,"Vol. 86","No. 10","pp. 1513-1516",2012,Apr.
"マイマイティ マイマイティレャアティ,Miyuki Kouda,Takamasa Kawanago,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,片岡 好則,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","The effect of remote Coulomb scattering on electron mobility in La2O3 gate stacked MOSFETs",,"Semiconductor Science and Technology",,"Vol. 27","No. 4",,2012,Mar.
"Takamasa Kawanago,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2",,"IEEE ELECTRON DEVICE LETTERS",,"Vol. 33","No. 3","pp. 423-425",2012,Mar.
"S. Kano,C. Dou,M. Hadi,K. Kakushima,P. Ahmet,A. Nishiyama,N. Sugii,K. Tsutsui,Y. Kataoka,K. Natori,E. Miranda,T. Hattori,H. Iwai","Influence of Electrode Material for CaOx Based Resistive Switching","China Semiconductor Technology International Conference (CSTIC)",,,,,,2012,Mar.
"Takamasa Kawanago,Yeonghun Lee,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature",,"IEEE Transactions on Electron Devices",,"Vol. 59","No. 2","pp. 269-276",2012,Feb.
"Takamasa Kawanago,鈴木 拓也,Yeonghun Lee,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process",,"Solid-State Electronics",,"Vol. 68",,"pp. .68-72",2012,Feb.
"Youhei Miyata,Jun Kanehara,Hiroshi Nohira,Y. Izumi,T. Muro,木下豊彦,パールハットアヘメト,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,takeo hattori,HIROSHI IWAI","Soft X-ray Photoelectron Spectroscopy Study of Boron Doped on Top Surfaces and Sidewalls of Si Fin Structures","2012 12th International Workshop on Junction Technology(IWJT2012)",,,,,,2012,
"Wei Li,中島一裕,竇春萌,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,片岡好則,Kenji Natori,takeo hattori,HIROSHI IWAI","Evaluation of Interfacial State Density of MOS Capacitor with Three-Dimensional Channel by Conductance Method","CSTIC 2012",,,,,,2012,
"Ryuji Hosoi,Yuya Suzuki,DARYOUSH ZADEH,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Characterization of matal Schottky junction for In0.53Ga0.47AAs substrates","CSTIC 2012",,,,,,2012,
"吉原亮,Yuta Tamura,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical characterization of atomically flat NiSi2 Schottky diode”, Ni silicidation for Si Fin and nanowire strucures","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Kana Tsuneishi,Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical properties of Tm2O3 gate dielectric and its scaling issues","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Kana Tsuneishi,Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical properties of Tm2O3 gate dielectric and its scaling issues","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Michihiro Hosoda,Yeonghun Lee,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,HIROSHI IWAI","Size-dependent phonon-limited electron mobility in Si Nanowire MOSFETs","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Kazuki Matsumoto,小山将央,Y. Wu,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Ni silicidation for Si Fin and nanowire strucures","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Kazuki Matsumoto,小山将央,Y. Wu,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Ni silicidation for Si Fin and nanowire strucures","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"田中祐樹,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Y. Tanaka, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai, “Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"shinichi kano,竇春萌,unknown unknown,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Impact of metal electrode material on resistive swirching properties of Ce oxides","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Ryuji Hosoi,Yuya Suzuki,DARYOUSH ZADEH,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"中島一裕,Wei Li,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface state density measurements of 3D silicon channel by charge pumping method","[550]	K. Nakajima, W. Li, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, “Interface state density measurements of 3D silicon channel by charge pumping method”, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"K. Tuokedaerhan,Tasuku Kaneda,マイマイティ マイマイティレャアティ,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Impact of Annealing Ambient for La2O3/Si Capacitor","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Wei Li,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface state density measurements of 3D silicon channel by conductance method","Interface state density measurements of 3D silicon channel by conductance method",,,,,,2012,
"Y. Wu,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","An analytical model of a tunnel FET with Schottky junction","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"竇春萌,Soshi Sato,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,HIROSHI IWAI,takeo hattori","Si nanowire FET with asymmetric channel","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"竇春萌,Soshi Sato,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,HIROSHI IWAI,takeo hattori","Si nanowire FET with asymmetric channel","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"DARYOUSH ZADEH,Ryuji Hosoi,Yuya Suzuki,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical Characterization and improvement of high-k/InGaAs devices","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"unknown unknown,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Influence of Heat Generation within Drain Region on Transport of Hot Electrons","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"マイマイティ マイマイティレャアティ,関拓也,Kuniyuki KAKUSHIMA,パールハットアヘメト,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Evaluation of oxide traps in La based oxides for direct high-k/Si capacitor","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Takamasa Kawanago,Kuniyuki KAKUSHIMA,パールハットアヘメト,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Nitrogen incorporated La-silicate gate dielectric with high scalability","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Kuniyuki KAKUSHIMA,Jun Kanehara,takeo hattori,KAZUO TSUTSUI,HIROSHI IWAI","Boron depth profile of a plasma immersed substrate by XPS analysis","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Daisuke Kitayama,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"T. Kawanago,K. Kakushima,P. Ahmet,Y. Kataoka,A. Nishiyama,N. Sugii,K. Tsutsui,K. Natori,T. Hattori,H. Iwai","(100)- and (110)-Oriented nMOSFETs with Highly Scaled EOT in La-Silicate/Si Interface for Multi-Gate Architecture","42nd European Solid-State Device Research Conference (ESSDERC 2012)",,,,,,2012,
"Kana Tsuneishi,Jiangning Chen,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Ti silicide electrodes low contact resistance for undoped AlGaN/GaN structure","ECS 222nd Meeting, ECS Transactions, Vol.50, No.3, pp., October 11, 2012,","ECS Transactions",,"Vol. 50","No. 3","pp. 447-450",2012,
"Jiangning Chen,Kana Tsuneishi,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics","ECS 222nd Meeting","ECS Transactions",,"Vol. 50","No. 3","pp. 353-357",2012,
"Jiangning Chen,Kana Tsuneishi,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics","ECS 222nd Meeting","ECS Transactions",,"Vol. 50","No. 3","pp. 353-357",2012,
"Tohtarhan Kamal,R. Tan,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface Properties of La-silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT","ECS 222nd Meeting","ECS Transactions",,"Vol. 50","No. 4","pp. 281-284",2012,
"吉原亮,Yuta Tamura,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Thermally stable NiSi2 for Ge contact with Schottky barrirer height modulation capability","ECS 222nd Meeting","ECS Transactions",,"Vol. 50","No. 9","pp. 217-221",2012,
"Yuya Suzuki,ダリューシュザデ,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Effect of In0.53Ga0.47AAs surface nitridation on electrical characteristics of high-k/capacitors","ECS 222nd Meeting","ECS Transactions",,"Vol. 50","No. 4","pp. 145-150",2012,
"Yuta Tamura,吉原亮,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","A Proposal of Schottky Barrire Height Tuning Method with Interface Controlled Ni/Si Stacked Silicidation Process","ECS 222nd Meeting","ECS Transactions",,,,,2012,
"Kuniyuki KAKUSHIMA,Yuta Tamura,吉原亮,KAZUO TSUTSUI,HIROSHI IWAI","Interface Controlled Stacked Ni Silicidation Process with Schottky Barrier Height Controllability","K. Kakushima, Y. Tamura, R. Yoshihara, K. Tsutsui, H. Iwai",,,,,,2012,
"Takamasa Kawanago,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture","ESSDERC 2012",,,,,,2012,
"Takamasa Kawanago,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture","ESSDERC 2012",,,,,,2012,