"Takanori Shirokura,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Magnetic property in sputtered MoS2 thin film on growth temperature","第23回 半導体におけるスピン工学の基礎と応用（PASPS-23)",,,,,,2018,Dec.
"K. Matsuura,J. Shimizu,M. Toyama,T. Ohashi,I. Muneta,S. Ishihara,K. Kakushima,K. Tsutsui,A. Ogura,H. Wakabayashi","Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration",,"IEEE Journal of the Electron Devices Society","IEEE","Vol. 6",,"pp. 1251 - 1257",2018,Nov.
"Eisuke Anju,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout",,"Journal of the Electron Devices Society (J-EDS)",,"vol. 8",,"pp. 1244-1250",2018,Nov.
"M. Hamada,K. Matsuura,T. Sakamoto,H. Tanigawa,T. Ohashi,I. Muneta,T. Hoshii,K. Kakushima,K. Tsutsui,H. Wakabayashi","Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film","2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)",,,,,,2018,Oct.
"T. Sakamoto,T. Ohashi,K. Matsuura,I. Muneta,K. Kakushima,K. Tsutsui,Y. Suzuki,N. Ikarashi,H. Wakabayashi","Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy","IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)",,,,,,2018,Oct.
"J. Shimizu,T. Ohashi,K. Matsuura,I. Muneta,K. Kakushima,K. Tsutsui,N. Ikarashi,H. Wakabayashi,N. Ikarashi","Low-Temperature MoS2 Film Formation using Sputtering and H2S Annealing",,"Journal of the Electron Devices Society",,"Vol. 7","No. 1","p. 2",2018,Oct.
"Takuya Hoshii,Kazuyoshi Furukawa,Kuniyuki Kakushima,Masahiro Watanabe,Naoyuki Shigyo,Takuya Saraya,Toshihiko Takakura,Kazuo Itou,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Iriya Muneta,Hitoshi Wakabayashi,Sinichi Nishizawa,Kazuo Tsutsui,Toshiro Hiramoto,Hiromichi Ohashi,Hiroshi Iwai","Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately","44th European Solid-State Circuits Conference (ESSDERC2018)",,,,,,2018,Sept.
"Takanori Shirokura,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Growth temperature dependence of magnetic property of sputtered MoS2 thin film","The 79th JSAP Autumn meeting",,,,,,2018,Sept.
"岩塚 春樹,星井 拓也,宗田 伊理也,若林 整,筒井 一生,角嶋 邦之","Siを導入したHfO2のMIMキャパシタの容量特性","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"久恒 和也,星井 拓也,宗田 伊理也,若林 整,筒井 一生,角嶋 邦之","CeOxを挿入したMIMキャパシタの静電容量の過渡応答特性","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"Kazuya Hisatsune,Yoshihisa Takaku,Kohei Sasa,Takuya Hoshii,Iriya Muneta,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","Charge and Discharge Characteristics of On-chip CeOx Electric Double Layer Decoupling Capacitors","Int. Conf. on Sold State Devices and Materials (SSDM2018)",,,,,,2018,Sept.
"松浦 賢太朗,清水 淳一,外山 真矢人,大橋 匠,宗田 伊理也,石原 聖也,角嶋 邦之,筒井 一生,小椋 厚志,若林 整","大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"谷川 晴紀,松浦 賢太朗,濱田 昌也,坂本 拓朗,宗田 伊理也,星井 拓也,角嶋 邦之,筒井 一生,若林 整","スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"五十嵐 智,松浦 賢太朗,濱田 昌也,谷川 晴紀,坂本 拓朗,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","保護膜を通したフォーミングガスアニールによるスパッタMoS2 膜の結晶性改善","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"佐々木 杏民,星井 拓也,宗田 伊理也,若林 整,筒井 一生,角嶋 邦之","n型SiCのエピタキシャル層の正孔ライフタイムがpnダイオード特性に与える影響",,,,,,,2018,Sept.
"佐々 康平,久恒 和也,星井 拓也,宗田 伊理也,若林 整,筒井 一生,角嶋 邦之","酸化セリウムを挿入したMIMキャパシタの充放電特性","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"I. Muneta,Danial B. Z.,N. Hayakawa,K. Kakushima,K. Tsutsui,H. Wakabayashi","Magnetic Force Microscopy Image Measured on MoS2 Thin Film Sputtered on CaF2 (111) Substrate","International School and Conference on Physics and Applications of Spin Phenomena in Solids (PASPS)",,,,,,2018,Aug.
"M. Toyama,T. Ohashi,K. Matsuura,J. Shimizu,I. Muneta,K. Kakushima,K. Tsutsui,H. Wakabayashi","Ohmic Contact between Titanium and Sputtered MoS2 Films achieved by Forming-Gas Annealing",,"JPN J APPL PHYS",,"  57",,"  07MA04",2018,June
"K. Kakushima,T. Hoshii,M. Watanabe,N. Shigyo,K. Furukawa,T. Saraya,T. Takakura,K. Itou,M. Fukui,S. Suzuki,K. Takeuchi,I. Muneta,H. Wakabayashi,Y. Numasawa,A. Ogura,S. Nishizawa,K. Tsutsui,T. Hiramoto,H. Ohashi,H. Iwai","New methodology for evaluating minority carrier lifetime for process assessment","Symp. On VLSI Technology (VLSI2018)",,,,,,2018,June
"C. Y. Su,T. Hoshii,I. Muneta,H. Wakabayashi,K. Tsutsui,H. Iwai,K. Kakushima","Interface State Density of Atomic Layer Deposited Al2O3 on Beta-Ga2O3","ECS Meeting",,,,,,2018,May
"D. Saito,I. Muneta,T. Hoshii,H. Wakabayashi,K. Tsutsui,H. Iwai,K. Kakushima","Reliability of SiC Schottky Diodes with Mo2C Electrode","ECS Meeting",,,,,,2018,May
"H. Kataoka,H. Iwai,T. Hoshii,I. Muneta,H. Wakabayashi,K. Tsutsui,H. Iwai,K. Kakushima","A Defect Density Profile Extraction Method for GaN Epi-Wafers","ECS Meeting",,,,,,2018,Apr.
"K. Matsuura,T. Ohashi,I. Muneta,S. Ishihara,K. Kakushima,K. Tsutsui,A. Ogura,H. Wakabayashi","Low-Carrier-Density Sputter-MoS2 Film by Vapor-Phase Sulfurization",,"Journal of Electrical Materials","Springer US","Vol. 47","No. 7","pp. 3497",2018,Mar.
"Zulkornain Bin Danial,宗田 伊理也,早川 直希,角嶋 邦之,筒井 一生,若林 整","Sputtered MoS2 Thin Film Formation on CaF2 (111) Substrate","第65回応用物理学会春季学術講演会",,,,,,2018,Mar.
"坂本 拓朗,大橋 匠,松浦 賢太朗,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","スパッタの低パワー化によるMoS2薄膜のキャリヤ濃度低減",,,,,,,2018,Mar.
"大橋 匠,坂本 拓朗,松浦 賢太朗,清水 淳一,外山 真矢人,石原 聖也,日比野 祐介,宗田 伊理也,角嶋 邦之,筒井 一生,小椋 厚志,若林 整","Migration制御したスパッタリング法による2次元層状MoS2成膜","第65回応用物理学会春季学術講演会",,,,,,2018,Mar.
"Chen-Yi Su,Takuya Hoshii,Iriya Muneta,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Kuniyuki Kakushima","Initial trap and hysteresis analysis of Atomic Layer Deposited Al2O3 on b-Ga2O3","65th JSAP Spring meeting",,,,,,2018,Mar.
"宗田 伊理也","[第9回シリコンテクノロジー分科会研究奨励賞受賞記念講演] Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet","第65回応用物理学会春季学術講演会",,,,,,2018,Mar.
"Suguru Tatsunokuchi,I. Muneta,T. Hoshii,H. Wakabayashi,K. Tsutsui,HIROSHI IWAI,K. Kakushima","Photovoltaic Properties of Lateral Ultra-Thin Si p-i-n structure","China Semiconductor Technology International Conference (CSTIC2018)",,,,,,2018,Mar.
"Eisuke Anju,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Self-Heating-Effect-Free p/n-Stacked-NW on Bulk-FinFETs and 6T-SRAM Layout","The 2nd Electron Devices Technology and Manufacturing Conference (EDTM2018)",,,,,,2018,Mar.
"K. Matsuura,J. Shimizu,M. Toyama,T. Ohashi,I. Muneta,S. Ishihara,K. Kakushima,K. Tsutsui,A. Ogura,H. Wakabayashi","Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate","2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",,,,"pp. 104-106",2018,Mar.
"N. Hayakawa,Iriya Muneta,Takumi Ohashi,Kenntarou Matsuura,Junnichi Shimizu,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,Hitoshi Wakabayashi","Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control",,"Japan Journal of Applied Physics","IOP Publishing","Vol. 57",,"  04FP13",2018,Mar.
"安重 英祐,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","ソース/ドレイン逆凹型コンタクト構造による横型積層シリコンナノワイヤFETにおける自己発熱効果の緩和","第65回応用物理学会春季学術講演会",,,,,,2018,Mar.