"Moataz Eissa,Takuya Mitarai,Tomohiro Amemiya,Nobuhiko Nishiyama,Yasuyuki Miyamoto","Fabrication of Si Photonics Waveguides by Thick Resist-Mask Electron Beam Lithography Proximity Effect Correction","32nd International Microprocesses and Nanotechnology Conference (MNC 2019)",,,,,,2019,Oct.
"早坂 明泰,青沼 遼介,堀田 航史,金井 七重,眞壁 勇夫,吉田 成輝,宮本 恭幸","N極性GaN HEMT作製プロセスにおけるプラズマダメージの低減","第80回 応用物理学会 秋季学術講演会",,,,,"  18p-N302-11",2019,Sept.
"K. Fukuda,N. Nogami,S. Kunisada,Y. Miyamoto","Circuit speedoriented device design scheme for double gate hetero tunnel FETs","2019 International Conference on Solid State Devices and Materials(SSDM 2019)",,,,,"  PS-1-21(LN),",2019,Sept.
"Y. Miyamoto,T. Kanazawa,N. Kise,H. Kinoshita,K. Ohsawa","Regrown Source/Drain in InGaAs Multi-Gate MOSFETs",,"J. Crystal Growth",,"vol. 522",,"  （2019）11-15",2019,Sept.
"MOATAZ Shaher Anis Mahmoud Eissa,御手洗 拓矢,雨宮 智宏,西山 伸彦,宮本 恭幸","Fabrication of Si Photonics Waveguides by Thick Resist-Mask Electron Beam Lithography Proximity Effect Correction","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"M.Kitamura,T.Kanazawa,Y.Miyamoto","Evaluation of fabricationmethod of InGaAs nanosheet","13rd th Topical Workshop onHeterostructure Microelectronics, (TWHM 2019)",,,,,"  6-6",2019,Aug.
"Tomohiro Amemiya,Tomoya Yoshida,Yuki Atsumi,Yasuyuki Miyamoto,Yoichi Sakakibara,Shigehisa Arai","Si-based Orbital Angular Momentum Mux/Demux Module","IEEE International Nanoelectronics Conference (INEC 2019)",,,,,,2019,July
"Y. Miyamoto","Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer","Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2019)",,,,,"  B7-4",2019,July
"A. Hayasaka,R. Aonuma,K. Hotta,I. Makabe,S. Yoshida,Y. Miyamoto","N-polar GaN HEMT with Al2O3 gate insulator","Compound Semiconductor Week 2019",,,,,"  MoP-G-8 (Poster)",2019,May
"W Zhang,T. Kanazawa,Y. Miyamoto","Performance improvement of a p-MoS2/HfS2 van der Waals heterostructure tunnelling field-effect transistor by UV-O3 treatment",,"Apl. Phys. Exp",,"vol. 12","no. 6","  065005 (2019)",2019,May
"K. Hotta,Y. Tomizuka,K. Itagaki,I. Makabe,S. Yoshida,Y. Miyamoto","Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure",,"Jpn. J. Appl. Phys",,"  58, (2019)","  SC","  SCCD14",2019,May
"?宮 智宏,吉? 知也,渥美 裕樹,西山 伸彦,宮本 恭幸,榊原 陽?,荒井 滋久","Siフォトニクスによる光渦MUX/DEMUXモジュール","電子情報通信学会 2018年総合大会",,,,,,2019,Mar.
"早坂 明泰,青沼 遼介,堀田 航史,眞壁 勇夫,吉田 成輝,宮本 恭幸","Al2O3ゲート絶縁膜を持つN極性GaN HEMT","第66回応用物理学会春季学術講演会",,,,,"  9p-M121-13",2019,Mar.
"R. Aonuma,N. Kise,Y. Miyamoto","GaAsSb/InGaAs double-gate vertical tunnel FET with a subthreshold slope of 56 mV/dec at room temperature",,"Jpn. J. Appl. Phys.",,,,"  58, SBBA08 (2019)",2019,Mar.
"張 文倫,金澤 徹,北村 稔,宮本 恭幸","UV-O3表面酸化によるHfS2 MOSFETの性能改善","第66回応用物理学会春季学術講演会",,,,,"  11p-W521-4",2019,Mar.
"野上 直哉,福田 浩一,宮本 恭幸","量子効果の影響を考慮したGaAsSb/InGaAs Double-Gate Tunnel FETの検討","第66回応用物理学会春季学術講演会",,,,,"  9p-S221-4",2019,Mar.
"北村 稔,金澤 徹,宮本 恭幸","HSQを用いたInGaAsナノシート構造作製法評価","第66回応用物理学会春季学術講演会",,,,,"  11a-M121-11",2019,Mar.
"Tomohiro Amemiya,Tomoya Yoshida,Yuki Atsumi,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Yoichi Sakakibara,Shigehisa Arai","Orbital Angular Momentum Mux/Demux Module Using Vertically Curved Si Waveguides","2019 Optical Fiber Communication Conference (OFC 2019)",,,,,,2019,Mar.
"W Zhang,S. Netsu,T. Kanazawa,T. Amemiya,Y. Miyamoto","Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor",,"Jpn. J. Appl. Phys",,"  58, SBBH02 (2019)",,,2019,Jan.