"Takuya Saraya,Kazuo Ito,Toshihiko Takakura,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Masanori Tsukuda,Katsumi Satoh,Tomoko Matsudai,Kuniyuki Kakushima,Takuya Hoshii,Kazuo Tsutsui,Hiroshi Iwai,Atsushi Ogura,Wataru Saito,Shin-ichi Nishizawa,Ichiro Omura,Hiromichi Ohashi,Toshiro Hiramoto","3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology","International Electron Devices Meeting (IEDM) 2020",,,,,,2020,Dec.
""Kazuto Mizutani,Yu-Wei Lin,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima"","Observation of wake-up effect on ferroelectric Y:HfO2 thickness scaling","Electrochemical Society (ECS) PRIME 2020",,,,,,2020,Oct.
"Y.-W. Lin,K. Mizutani,T. Hoshii,H. Wakabayashi,K. Tsutsui,Y.-F. Tsao,T.-J. Huang,H.-T. Hsu,K. Kakushima","Ferroelectric HfO2 Capacitors for Varctor Application in GHz","Electrochemical Society (ECS) PRIME 2020",,,,,,2020,Oct.
"A. Miyata,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima","Photocurrent measurements of AlGaN/GaN HEMT under X-ray irradiation","Electrochemical Society (ECS) PRIME 2020",,,,,,2020,Oct.
"H. Nishida,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima","A simulation study on the transient leakage current analysis of a GaN epitaxial layer","Electrochemical Society (ECS) PRIME 2020",,,,,,2020,Oct.
""Atsuhiro Ohta,J. Song,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima"","Electrical Characteristics of Atomic Layer Deposited Y-silicate Dielectrics","Electrochemical Society (ECS) PRIME 2020",,,,,,2020,Oct.
"S. Tsai,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima","Highly Oriented Growth of AlxSc1-xN Ferroelectric Film on W Bottom Electrodes","Electrochemical Society (ECS) PRIME 2020",,,,,,2020,Oct.
"Shinya Imai,Takuya Hamada,Masaya Hamada,Takanori Shirokura,Shigetaka Tomiya,Iriya Muneta,Kuniyuki Kakushima,Tetsuya Tatsumi,Kazuo Tsutsui,Hitoshi Wakabayashi","Importance of MoS2-Compound Sputtering even with Sulfur-Vapor Anneal for Chip-Size Fabrication","International Conference of Solid State Devices and Materials (SSDM) 2020",,,,,,2020,Sept.
"Sunglin Tsai,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","Thickness Scaling on Ferroelectric Al0.8Sc0.2N Films","International Conference of Solid State Devices and Materials (SSDM) 2020",,,,,,2020,Sept.
"Satoshi Igarashi,Yusuke Mochiduki,Haruki Tanigawa,Masaya Hamada,Kentaro Matsuura,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Low Contact Resistance at Interface between Sputtered-MoS2 Film and TiSi2 Contact Treated by Higher-Temperature Forming-Gas Annealing","International Conference of Solid State Devices and Materials (SSDM) 2020",,,,,,2020,Sept.
"Masaya Hamada,Kentaro Matsuura,Takuya Hamada,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","ZrS2 Ambipolar FETs with Schottky Barrier to Near-Midgap TiN Contact Controlled by Top Gate TiN/Al2O3 Stack","International Conference of Solid State Devices and Materials (SSDM) 2020",,,,,,2020,Sept.
"Masaya Hamada,Kentaro Matsuura,Takuro Sakamoto,Haruki Tanigawa,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Sulfurization even through Al2O3 Passivation Film Simultaneously Preventing Oxidation",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 59","No. 10","Page 105501",2020,Sept.
"松田 和典,生田 壮馬,中谷 友哉,長岡 史郎,筒井 一生","Geのピエゾ抵抗効果（?）","第81回応用物理学会秋季学術講演会",,,,,,2020,Sept.
"木村 安希,星井 拓也,宮野 清孝,津久井 雅之,水島 一郎,依田 孝,角嶋 邦之,若林 整,筒井 一生","InAlN/(AlN)/GaN構造におけるキャリア移動度の温度依存性","第81回応用物理学会秋季学術講演会",,,,,,2020,Sept.
"門 龍翔,横川 凌,沼沢 陽一郎,筒井 一生,角嶋 邦之,小椋 厚志","Si-IGBT作製プロセスにおける水素熱処理の影響","第81回応用物理学会秋季学術講演会",,,,,,2020,Sept.
"筒井 一生,松橋 泰平,星井 拓也,角嶋 邦之,若林 整,永山 勉,樋口 隆弘,加藤 慎一,谷村 英昭,室 隆桂之,松下 智裕,森川 良忠","AsおよびBの共ドープによるSi中Asクラスターの特性制御","第81回応用物理学会秋季学術講演会",,,,,,2020,Sept.
"高山 研,太田 貴士,佐々木 満孝,向井 勇人,濱田 拓也,高橋 言雄,井出 利英,清水 三聡,星井 拓也,角嶋 邦之,若林 整,筒井 一生","選択成長法を用いたGaN FinFETの作製:リーク電流抑制の改良","第81回応用物理学会秋季学術講演会",,,,,,2020,Sept.
"久恒 悠介,金 相佑,星井 拓也,角嶋 邦之,若林 整,筒井 一生","横型GaN FinFETの構造最適化についての検討","第81回応用物理学会秋季学術講演会",,,,,,2020,Sept.
"Kentaro Matsuura,Masaya Hamada,Takuya Hamada,Haruki Tanigawa,Takuro Sakamoto,Atsushi Hori,Iriya Muneta,Takamasa Kawanago,Kuniyuki Kakushima,Kazuo","Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration",,"Japanese Journal of Applied Physics (JJAP) (Rapid Communication)",,"Vol. 59","No. 8","Page 80906",2020,Aug.
"Kiyoshi Takeuchi,Munetoshi Fukui,Takuya Saraya,Kazuo Itou,Toshihiko Takakura,Shinichi Suzuki,Yohichiroh Numasawa,Naoyuki Shigyo,Kuniyuki Kakushima,Takuya Hoshii,Kazuyoshi Furukawa,Masahiro Watanabe,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Atsushi Ogura,Wataru Saito,Shin-ichi Nishizawa,Masanori Tsukuda,Ichiro Omura,Hiromichi Ohashi,Toshiro Hiramoto","Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs",,"IEEE Trans. On Semiconductor Manufactureing",,"Vol. 33","No. 2","pp. 159-165",2020,May
"Jinan Song,Lyu Wei Lin,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","Atomic Layer Deposition of Y2O3 Thin Films with a High Growth per Cycle by Ar Multiple Boost Injection",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 59",,,2020,Apr.
"Haruki Tanigawa,Kentaro Matsuura,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Enhancement-Mode Accumulation Capacitance-Voltage Characteristics in TiN/ALD-Al2O3/Sputtered-MoS2 Top-Gated Stacks",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 59",,,2020,Apr.
"松浦 賢太朗,濱田 昌也,濱田 拓也,谷川 晴紀,坂本 拓朗,堀 敦,宗田 伊理也,川那子 高暢,角嶋 邦之,筒井 一生,小椋 厚志,若林 整","大面積集積化に向けたスパッタ堆積ノーマリーオフMoS2-nMISFETs","第67回応用物理学会春期学術講演会",,,,,,2020,Mar.
"木村 安希,星井 拓也,宮野 清孝,布上 真也,名古 肇,水島 一郎,依田 孝,角嶋 邦之,若林 整,筒井 一生","InAlN/GaNヘテロ構造におけるキャリア輸送特性のAlNスペーサ層膜厚依存性","第67回応用物理学会春期学術講演会",,,,,,2020,Mar.
"松橋 泰平,星井 拓也,沖田 寛昌,中島 昭,角嶋 邦之,若林 整,筒井 一生","分極接合基板における2DEG枯渇電圧の解析的導出","第67回応用物理学会春期学術講演会",,,,,,2020,Mar.
"Takuya Saraya,Kazuo Itou,Toshihiko Takakura,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Kuniyuki Kakushima,Takuya Hoshii,Kazuo Tsutsui,Hiroshi Iwai,Shin-ichi Nishizawa,Ichiro Omura,Toshiro Hiramoto","Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs",,"Japanese Journal of Applied Physics",,"Vol. 59","No. SG",,2020,Mar.
"Joel Molina-Reyes,Takuya Hoshii,Shun-Ichiro Ohmi,Hiroshi Funakubo,Atsushi Hori,Ichiro Fujiwara,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films",,"Japanese Journal of Applied Physics",,"Vol. 59","No. SG",,2020,Feb.
"Tomohiko Yamagishi,Atsushi Hori,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Self-Heating-Aware Cell Design for p/n-Vertically-Integrated Nanowire on FinFET beyond 3-nm Technology Node",,"Japanese Journal of Applied Physics",,"Vol. 59","No. SG",,2020,Feb.
"Kazuo Tsutsui,Yoshitada Morikawa","Analyses of three-dimensional atomic arrangements of impurities doped in Si relating to electrical activity by spectro-photoelectron holography",,"Japanese Journal of Applied Physics",,"Vol. 59",,,2020,Jan.