"‹à–ì’B,Ÿ–“˜B,–Ø‘º²”Ž,’†‘º—æ—Y,”ŠÑ—º‘¾,ŽR莘Y,¬àVŒ’ˆê,ŠÔ£ˆê•F,”Ñ·‘ñŽk,¬X•¶•v,•½ŽR”Ž”V,’†’ÒŠ°","Si(110)3~2-Bi•\–Ê‚Ì“dŽqó‘Ô","2020”N“ú–{•\–Ê^‹óŠw‰ïŠwpu‰‰‰ï",,,,,,2020,Nov. "K. Sugawara,I. Seo,S. Yamazaki,K. Nakatsuji,Y. Gohda,H. Hirayama","Effective quantum-well width of confined electrons in ultrathin Ag(111) films on Si(111)7x7 substrates",,"Surface Science",,"Vol. 704",,"p. 121745 (6 pages)",2020,Oct. "”’àV“O˜Y,Wolfgang Voegeli,rì‰x—Y,‚‹´•q’j,’ª“c—º‘¾,’†’ÒŠ°,•½ŽR”Ž”V","•ÏŒ`•—Ø\‘¢Bi’´”––Œ‚ÌŒ´ŽqƒXƒP[ƒ‹¬’·‹@\‰ðÍ","“ú–{•¨—Šw‰ï2020”NH‹G‘å‰ï",,,,,,2020,Sept. "”Ñ·‘ñŽk,¡‘º‹Ï,‹›’J—º‰î,‹{’¬r¶,•ž•”‘ô–,’†’ÒŠ°,–k‘º–¢•à,–xêOŽi,ŠÔ£ˆê•F,ŠŒ´—²Ži,Visikovskiy Anton,“c’†Œå,¬X•¶•v","SiC(0001)ã‚̃cƒCƒXƒgƒOƒ‰ƒtƒFƒ“‚Ì“dŽqó‘Ԃ̃cƒCƒXƒgŠp“xˆË‘¶«","“ú–{•¨—Šw‰ï 2020”NH‹G‘å‰ï",,,,,,2020,Sept. "H. Imamura,A. Visikovskiy,R. Uotani,T. Kajiwara,H. Ando,T. Iimori,K. Iwata,T. Miyamachi,K. Nakatsuji,K. Mase,T. Shirasawa,F. Komori,S. Tanaka","Twisted bilayer graphene fabricated by direct bonding in a high vacuum",,"Applied Physics Express",,"Volume 13","Issue 7","pp. 075004",2020,July "Kentaro Nagase,Ryota Ushioda,Kan Nakatsuji,Tetsuroh Shirasawa,Hiroyuki Hirayama","Growth of extremely flat Bi(110) films on a Si(111)ã3 ~ ã3-B substrate",,"Applied Physics Express",,"Vol. 13",,"p. 085506 (4 pages)",2020,July "T. Ogino,V. M. Kuzumo,S. Yamazaki,K. Nakatsuji,H. Hirayama","Variation of the metal-insulator transition temperature of quasi-one-dimensional indium chains upon carrier doping from Si(111) substrates",,"J. Phys.: Condens. Matter",,"Vol. 32",,"p. 415001 (8pp)",2020,July "’ª“c—º‘¾,’·£Œª‘¾˜Y,‰¬–ì“‘å,ŽÔ”öƒ”ƒ@ƒŒƒ“ƒeƒBƒ“Šî,’†’Ò Š°,”’àV “O˜Y,•½ŽR ”Ž”V","Si(111)7~7 Šî”Âã‚É‚¨‚¯‚éŠï”‘w‚‚³Bi(110)“‡‚ÌoŒ»","“ú–{•¨—Šw‰ï‘æ75‰ñ”NŽŸ‘å‰ï",,,,,,2020,Mar. "‹à–ì’B,Ÿ–“˜B,–Ø‘º²”Ž,’†‘º—æ—Y,ŽR莘Y,¬àVŒ’ˆê,ŠÔ£ˆê•F,”Ñ·‘ñŽk,¬X•¶•v,•½ŽR”Ž”V,’†’ÒŠ°","Si(110)3x2-Bi•\–Ê‚Ì“dŽqó‘Ô","“ú–{•¨—Šw‰ï‘æ75‰ñ”NŽŸ‘å‰ï",,,,,,2020,Mar. "Kan Nakatsuji","Atomic and electronic structures of Bi(110) islands grown on Si substrates","IMR+MAX IV 2020",,,,,,2020,Jan.