"Takamasa Kawanago,Takahiro Matsuzaki,Ryosuke Kajikawa,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd  Down to 0.5 V Consisting of WSe2  n/p FETs","International Conference on Solid State Devices and Materials",,,,,,2021,Sept.
"Ryo Ono,Shinya Imai,Yuta Kusama,Takuya Hamada,Masaya Hamada,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Nobuyuki Ikarashi,Hitoshi Wakabayashi","Growth Mechanism of PVD MoS2 Film from Sub-Monolayer Region","International Conference on Solid State Devices and Materials",,,,,,2021,Sept.
"Takuya Hamada,Taiga Horiguchi,Masaya Hamada,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Tetsuya Tatsumi,Shigetaka Tomiya,Hitoshi Wakabayashi","Grain Size Enlargement in 2D WS2 Film with Low-Power RF-Magnetron Sputtering","Internatonal Conference on Solid State Devices and Materials",,,,,,2021,Sept.
"Takuya Hamada,Masaya Hamada,Satoshi Igarashi,Taiga Horiguchi,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Tetsuya Tatsumi,Shigetaka Tomiya,Hitoshi Wakabayashi","WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET with TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box",,"Journal of the Electron Devices Society (J-EDS)",,"Vol. 9",,"p. 1117",2021,Aug.
"Masahiro Watanabe,Naoyuki Shigyo,Takuya Hoshii,Kazuyoshi Furukawa,Kuniyuki Kakushima,Katsumi Satoh,Tomoko Matsudai,Takuya Saraya,Iriya Muneta,Hitoshi Wakabayashi,Akira Nakajima,Shin-ichi Nishizawa,Kazuo Tsutsui,Toshiro Hiramoto,Hiromichi Ohashi,Hiroshi Iwai","Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices","IEEE 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)","Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)",,,,"pp. 217-219",2021,Apr.
"Shinya Imai,Takuya Hamada,Masaya Hamada,Takanori Shirokura,Iriya Muneta,Kuniyuki Kakushima,Tetsuya Tatsumi,Shigetaka Tomiya,Kazuo Tsutsui,Hitoshi Wakabayashi","Importance of Crystallinity Improvement in MoS2 film just after MoS2-Compound Sputtering even followed by Post Sulfurization for Chip-Size Fabrication",,"Japanese Journal of Applied Physics (JJAP) （SSDM特集号）",,"Vol. 60",,"Page SBBH10",2021,Feb.
"Masaya Hamada,Kentaro Matsuura,Takuya Hamada,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","ZrS2 Symmetrical-Ambipolar FETs with Near-Midgap TiN Film for Both Top-Gate electrode and Schottky-Barrier Contact",,"Japanese Journal of Applied Physics (JJAP) （SSDM特集号）",,"Vol. 60",,"Page SBBH05",2021,Jan.
"Satoshi Igarashi,Yusuke Mochiduki,Haruki Tanigawa,Masaya Hamada,Kentaro Matsuura,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Self-Aligned-TiSi2 Bottom Contact with APM Cleaning and Post-annealing for Sputtered-MoS2 Film",,"Japanese Journal of Applied Physics (JJAP) （SSDM特集号）",,"Vol. 60",,"Page SBBH04",2021,Jan.