"Makoto Minohara,Yuka Dobashi,Naoto Kikuchi,Akane Samizo,Takashi Honda,Xinyi He,Takayoshi Katase,Toshio Kamiya,Keishi Nishio,Yoshihiro Aiura","Tuning of Hole Carrier Density in p-type ƒ¿-SnWO4 by Exploiting Oxygen Defects",,"Materials Advances",,"Vol. 3",,"pp. 9111",2022,Nov.
"ƒz ƒVƒ“ƒC,•Ð�£‹M‹`,ˆäŽèŒ[‰î,�×–ì�G—Y,�_’J—˜•v","ZnO’†‚Ì�…‘f•¡�‡Œ‡Š×","”––Œ�Þ—¿ƒfƒoƒCƒXŒ¤‹†‰ï ‘æ19‰ñŒ¤‹†�W‰ï�u�V”¼“±‘Ì�Þ—¿�EƒfƒoƒCƒX�FSDGsŽÀŒ»‚ÖŒü‚¯‚Ä�v",,,,,,2022,Nov.
"•Ð�£‹M‹`,ƒz ƒVƒ“ƒC,ƒ`ƒFƒ“ ƒWƒ“ƒVƒ…ƒAƒC,ˆäŽèŒ[‰î,•½�¼�G“T,�×–ì�G—Y,�_’J—˜•v","(111)”zŒü”ñ•½�tŠâ‰–Œ^(Sn,Ca)SeƒGƒsƒ^ƒLƒVƒƒƒ‹”––Œ‚̃hƒ�ƒCƒ“‹«ŠE‚Ì“d‹C“Á�«","“ú–{ƒZƒ‰ƒ~ƒbƒNƒX‹¦‰ï‘æ42‰ñ“dŽq�Þ—¿Œ¤‹†“¢˜_‰ï",,,,,,2022,Nov.
"•Ð�£‹M‹`,ƒz ƒVƒ“ƒC,ƒ`ƒFƒ“ ƒWƒ“ƒVƒ…ƒAƒC,ˆäŽèŒ[‰î,•½�¼�G“T,�×–ì�G—Y,�_’J—˜•v","�€ˆÀ’è(Pb1-xSnx)SeŒÅ—n‘Ì‚Ì�‡�¬�F2ŽŸŒ³-3ŽŸŒ³�\‘¢“]ˆÚ‚Ì—U‹N‚Æ“d‹C�E”M“`“±—¦•Ï’²","“ú–{ƒZƒ‰ƒ~ƒbƒNƒX‹¦‰ï‘æ42‰ñ“dŽq�Þ—¿Œ¤‹†“¢˜_‰ï",,,,,,2022,Nov.
"Xinyi He","First-principles materials design of inorganic semiconductors with defects and phonon scattering",,,,,,,2022,Sept.
"Xinyi He,Haoyun Zhang,Takumi Nose,Takayoshi Katase,Terumasa Tadano,Keisuke Ide,hidenori hiramatsu,HIDEO HOSONO,TOSHIO KAMIYA","Degenerated hole doping and enhanced thermoelectric figure-of-merit ZT in layered SnSe by isovalent Te ion substitution","‘æ83‰ñ‰ž—p•¨—�Šw‰ï�H‹GŠw�p�u‰‰‰ï",,,,,,2022,Sept.
"Xinyi HE","First-principles materials design of inorganic semiconductors with defects and phonon scattering",,,,,,,2022,Sept.
"Xinyi HE","First-principles materials design of inorganic semiconductors with defects and phonon scattering",,,,,,,2022,Sept.
"Xinyi HE","First-principles materials design of inorganic semiconductors with defects and phonon scattering",,,,,,,2022,Sept.
"•Ð�£‹M‹`,�¼‘º—D�ì,ƒz ƒVƒ“ƒC,‘ü–쉛�«,ˆäŽèŒ[‰î,‹C’J‘ì,”¼‘ò�K‘¾,•½�¼�G“T,�ì˜H‹Ï,�×–ì�G—Y,�_’J—˜•v","�€ˆÀ’è(Pb1-xSnx)SeŒÅ—n‘Ì‚Ì2ŽŸŒ³-3ŽŸŒ³�\‘¢“]ˆÚ‚É”º‚¤”M“`“±—¦•Ï’²","‘æ83‰ñ‰ž—p•¨—�Šw‰ï�H‹GŠw�p�u‰‰‰ï",,,,,,2022,Sept.
"•Ð�£‹M‹`,ƒz ƒVƒ“ƒC,ƒ`ƒFƒ“ ƒWƒ“ƒVƒ…ƒAƒC,ˆäŽèŒ[‰î,•½�¼�G“T,�×–ì�G—Y,�_’J—˜•v","�‚ˆÚ“®“xŠâ‰–Œ^(Sn,Ca)Se�€ˆÀ’è‘Š‚̃Gƒsƒ^ƒLƒVƒƒƒ‹”––Œ�¬’·‚ƃLƒƒƒŠƒA—A‘—“Á�«","‘æ83‰ñ‰ž—p•¨—�Šw‰ï�H‹GŠw�p�u‰‰‰ï",,,,,,2022,Sept.
"Akihiro Shiraishi,Shigeru Kimura,Xinyi He,Naoto Watanabe,Takayoshi Katase,Keisuke Ide,Makoto Minohara,Kosuke Matsuzaki,Hidenori Hiramatsu,Hiroshi Kumigashira,Hideo Hosono,Toshio Kamiya","Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors",,"INORG. CHEM.",,"  61",,"  6650�|6659",2022,Apr.
"Kaiwen Li,Atsushi Shimizu,Xinyi He,Keisuke Ide,Kota Hanzawa,Kosuke Matsuzaki,Takayoshi Katase,Hidenori Hiramatsu,Hideo Hosono,Q. Zhang,Toshio Kamiya","Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn3N2 Films on a Glass Substrate",,"ACS Appl. Electron. Mater.",,"Vol. 4",,"pp. 2026",2022,Apr.
"Xinyi He,Jinshuai Chen,Takayoshi Katase,Makoto Minohara,Keisuke Ide,Hidenori Hiramatsu,Hiroshi Kumigashira,Hideo Hosono,Toshio Kamiya","High-Mobility Metastable Rock-Salt Type (Sn,Ca)Se Thin Film Stabilized by Direct Epitaxial Growth on a YSZ (111) Single-Crystal Substrate",,"ACS Appl. Mater. Interfaces",,"  14",,"  18682?18689",2022,Apr.
"Makoto Minohara,Naoto Kikuchi,TKouhei Tsukada,Yuka,Dobashi,Akane Samizo,Keishi Nishio,Xinyi He,Takayoshi Katase,Toshio Kamiya,Yoshihiro Aiura","Effect of intentional chemical doping on crystallographic and electric properties of the pyrochlore Bi2Sn2O7",,"Materials & Design",,"Vol. 216",,"pp. 110549",2022,Mar.
"Xinyi He,Haoyun Zhang,Takumi Nose,Takayoshi Katase,Terumasa Tadano,Keisuke Ide,Shigenori Ueda,Hidenori Hiramatsu,Hideo Hosono,Toshio Kamiya","Degenerated Hole Doping and Ultra-Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution",,"Advanced Science",,"Vol. 9",,"pp. 202105958",2022,Mar.
"Yusaku Nishimura,Xinyi He,Takayoshi Katase,Terumasa Tadano,Keisuke Ide,Suguru Kitani,Kota Hanzawa,Shigenori Ueda,Hidenori Hiramatsu,Hitoshi Kawaji,Hideo Hosono,Toshio Kamiya","Electronic and Lattice Thermal Conductivity Switching by 3D�|2D Crystal Structure Transition in Nonequilibrium (Pb1�|xSnx)Se",,"Advanced Electronic Materials",,"  32",,"  2200024 (1 of 9)",2022,Feb.