@article{CTT100659660,
  author = {Aya Shindome and Yu Doioka and Nobuyasu Beppu and Shunri Oda and Ken Uchida},
  title = {Experimental Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and Multilayer Exfoliated Graphene Nanoribbons},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@article{CTT100652829,
  author = {Tsunaki Takahashi and Nobuyasu Beppu and Kunro Chen and Shunri Oda and Ken Uchida},
  title = {Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@inproceedings{CTT100677533,
  author = {高橋綱己 and 別府伸耕 and 陳君ろ and 小田俊理 and 内田建},
  title = {バルク／SOI FinFET の自己加熱およびアナログ特性の最適化},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100652957,
  author = {高橋綱己 and 別府伸耕 and 小田俊理 and 内田建},
  title = {熱配慮設計によるFinFETアナログ特性の最適化},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652960,
  author = {新留 彩 and 別府伸耕 and 高橋綱己 and 小田俊理 and 内田 建},
  title = {架橋・非架橋構造のグラフェン抵抗変化型メモリの書込・消去特性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100635540,
  author = {高橋綱己 and 別府伸耕 and 陳 君璐 and 小田俊理 and 内田 建},
  title = {デバイスシミュレータを用いたナノスケールBulk/SOI FinFET の熱設計},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635539,
  author = {別府伸耕 and 小田俊理 and 内田 建},
  title = {AC コンダクタンス法及びパルスIV 法による自己発熱抑制時のSOI MOSFETドレイン電流評価},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652973,
  author = {N. Beppu and T. Takahashi and S Oda and K. Uchida},
  title = {Experimental Study of Self-Heating Effect (SHE) in SOI MOSFETs: Accurate Understanding of Temperatures During AC Conductance Measurement, Proposals of 2ω Method and Modified Pulsed IV},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652987,
  author = {高橋綱己 and 別府伸耕 and 小田俊理 and 内田 建},
  title = {デバイスシミュレータを用いたナノスケールBulk/SOI FinFET熱等価回路モデルの導出},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652988,
  author = {別府伸耕 and 小田俊理 and 内田 建},
  title = {ACコンダクタンス法を用いた実験手法に対する検証},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100632885,
  author = {T. Takahashi and K.Chen and N.Beppu and S. Oda and K.  Uchida},
  title = {Thermal-Aware Device Design of Nanoscale Bulk/SOI FinFETs: Suppression of Operation Temperature and Its Variability},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100632992,
  author = {T. Ohashi and T. Takahashi and N. Beppu and S. Oda and K. Uchida},
  title = {Experimental Evidence of Increased Deformation Potential at MOS Interface and its Impact on Characteristics of ETSOI FETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654158,
  author = {T. Takahashi and N. Beppu and K. Chen and S. Oda and K. Uchida},
  title = {Thermal-Aware Device Design of Nanoscale Bulk/SOI FinFETs: Suppression of Operation Temperature and Its Variability},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654159,
  author = {T. Ohashi and T. Takahashi and N. Beppu and S. Oda and K. Uchida},
  title = {Experimental Evidence of Increased Deformation Potential at MOS Interface and Its Impact on Characteristic of ETSOI FETs},
  booktitle = {},
  year = 2011,
}