@article{CTT100883067,
  author = {Si-Meng Chen and Sung Lin Tsai and Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Edward Yi Chang and Kuniyuki KAKUSHIMA},
  title = {GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation},
  journal = {Japanese Journal of Applied Physics},
  year = 2022,
}

@inproceedings{CTT100877152,
  author = {Si-Meng Chen and Sung-Lin Tsai and Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kuniyuki Kakushima},
  title = {GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation},
  booktitle = {},
  year = 2021,
}

@misc{CTT100929643,
  author = {Si-Meng Chen},
  title = {Highly Reliable and Scalable Ferroelectric AlScN Thin Films for Future Advanced Memory Technology},
  year = ,
}

@misc{CTT100929644,
  author = {Chen Si-Meng},
  title = {先端メモリ技術に向けた強誘電体 AlScN 薄膜の高集積化と高信頼性に関する研究},
  year = ,
}



@phdthesis{CTT100929643,
  author = {Si-Meng Chen},
  title = {Highly Reliable and Scalable Ferroelectric AlScN Thin Films for Future Advanced Memory Technology},
  school = {東京科学大学},
  year = ,
}

@phdthesis{CTT100929644,
  author = {Chen Si-Meng},
  title = {先端メモリ技術に向けた強誘電体 AlScN 薄膜の高集積化と高信頼性に関する研究},
  school = {東京科学大学},
  year = ,
}