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EGYNADwinanri 研究業績一覧 (15件)
論文
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Yota Suzuki,
Dwinanri Egyna,
Tomoki Shibata,
Takahito Nishimura,
Akira Yamada.
Mechanism analysis of CuInS2 and Cu(In,Ga)S2 growth via KCN- and H2S-free process and solar-cell application,
Japanese Journal of Applied Physics,
Vol. 62,
SK1032,
May 2023.
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Dwinanri Egyna,
Satoru Ito,
Takahito Nishimura,
Akira Yamada.
Growth of Zn-Ge-O Thin-Film as a Transparent Conductive Oxide Buffer Material for Chalcopyrite Solar Cell,
Cryst. Research Technology,
2200145,
Dec. 2022.
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Dwinanri Egyna,
Kazuyoshi Nakada,
Akira Yamada.
Benefits of Low Electron-Affinity Material as the N-Type Layer for Cu(In,Ga)S2 Solar Cell,
Energies,
15,
1,
4,
Dec. 2021.
国際会議発表 (査読有り)
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Dwinanri Egyna,
Ito Satoru,
Takahito Nishimura,
Akira Yamada.
Zn-Ge-O thin-films as alternative n-type layers for chalcogenide solar cells,
33rd International Photovoltaic Science and Engineering Conference (PVSEC-33),
Nov. 2022.
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Yota Suzuki,
Dwinanri Egyna,
Tomoki Shibata,
Takahito Nishimura,
Akira Yamada.
Growth mechanism and fabrication of pure sulfide CuIn(Ga)S2 solar cell by sulfurization,
33rd International Photovoltaic Science and Engineering Conference (PVSEC-33),
Nov. 2022.
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Dwinanri Egyna,
Kazuyoshi Nakada,
Akira Yamada.
Effect of Metallic Precursor Pre-Annealing Temperature on CuInS2 (CIS) Film Formation,
THE 29TH INTERNATIONAL CONFERENCE ON PHOTOVOLTAIC SCIENCE & ENGINEERING,
Nov. 2019.
国際会議発表 (査読なし・不明)
国内会議発表 (査読なし・不明)
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鈴木 陽太,
Dwinanri Egyna,
柴田 智樹,
山田 裕太郎,
西村 昂人,
山田 明.
Cu(In,Ga)S2 太陽電池のための低電 子親和力 Zn-Ge-O の開発,
第20回「次世代の太陽光発電システム」シンポジウム,
June 2023.
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鈴木 陽太,
Egyna Dwinanri,
山田 明.
粉末硫黄を用いた硫化法によるCuInS2の作製,
第69回応用物理学会春季学術講演会,
Mar. 2022.
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Dwinanri Egyna,
Ryoma Yomeda,
Kosuke Beppu,
Takahiro Wada,
Yamada Akira.
Growth of Zn-Ge-O Thin Film as a Transparent Conductive Oxide With a Low Electron Affinity,
第82回 応用物理学会秋季学術講演会,
Sept. 2021.
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Dwinanri Egyna,
Kazuyoshi Nakada,
Akira Yamada.
The Advantage of Low Electron Affinity Materials as the Window Layer of Buffer-free CIGS2 Solar Cells,
応用物理学会春季学術講演会,
Mar. 2021.
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Dwinanri Egyna,
Kazuyoshi Nakada,
Akira Yamada.
Effect of Annealing Temperature in H2S-free Sulfurization Method for CIS Fabrication,
第66回応用物理学会春季学術講演会,
Mar. 2019.
学位論文
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Study of Zn-Ge-O Thin Film as Alternative Low Electron Affinity N-Type Material for Wide Band Gap Chalcogenide Solar Cell,
Exam Summary,
Doctor (Engineering),
Tokyo Institute of Technology,
2023/09/22,
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Study of Zn-Ge-O Thin Film as Alternative Low Electron Affinity N-Type Material for Wide Band Gap Chalcogenide Solar Cell,
Summary,
Doctor (Engineering),
Tokyo Institute of Technology,
2023/09/22,
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Study of Zn-Ge-O Thin Film as Alternative Low Electron Affinity N-Type Material for Wide Band Gap Chalcogenide Solar Cell,
Thesis,
Doctor (Engineering),
Tokyo Institute of Technology,
2023/09/22,
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