@article{CTT100855585,
  author = {Masaya Hamada and Kentaro Matsuura and Takuro Sakamoto and Haruki Tanigawa and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Sulfurization even through Al2O3 Passivation Film Simultaneously Preventing Oxidation},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2020,
}

@article{CTT100855454,
  author = {Kentaro Matsuura and Masaya Hamada and Takuya Hamada and Haruki Tanigawa and Takuro Sakamoto and Atsushi Hori and Iriya Muneta and Takamasa Kawanago and Kuniyuki Kakushima and Kazuo},
  title = {Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration},
  journal = {Japanese Journal of Applied Physics (JJAP) (Rapid Communication)},
  year = 2020,
}

@article{CTT100813951,
  author = {Masaya Hamada and Kentaro Matsuura and Takuro Sakamoto and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film using UHV RF Magnetron Sputtering and Sulfurization},
  journal = {Journal of the Electron Devices Society (J-EDS)},
  year = 2019,
}

@inproceedings{CTT100829205,
  author = {松浦 賢太朗 and 濱田 昌也 and 濱田 拓也 and 谷川 晴紀 and 坂本 拓朗 and 堀 敦 and 宗田 伊理也 and 川那子 高暢 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {大面積集積化に向けたスパッタ堆積ノーマリーオフMoS2-nMISFETs},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100814075,
  author = {Ryunosuke Otsuki and Yuta Suzuki and Takuro Sakamoto and Takanori Shirokura and Iriya Muneta and Masahiro Nagao and Hitoshi Wakabayashi and Nobuyuki Ikarashi},
  title = {Structural analysis of MoS2 films fabricated by radiofrequency sputtering using highangle annular dark field scanning transmission electron microscopy},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813978,
  author = {K. Matsuura and M. Hamada and T. Hamada and H. Tanigawa and T. Sakamoto and W. Cao and K. Parto and A. Hori and I. Muneta and T. Kawanago and K. Kakushima and K. Tsutsui and A. Ogura and K. Banerjee and H. Wakabayashi},
  title = {Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813970,
  author = {Masaya Hamada and Kentaro Matsuura and Takuro Sakamoto and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816749,
  author = {松浦 賢太朗 and 濱田 昌也 and 坂本 拓朗 and 谷川 晴紀 and 宗田 伊理也 and 石原 聖也 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816746,
  author = {松浦賢太朗 and 清水淳一 and 外山真矢人 and 大橋匠 and 坂本拓朗 and 宗田伊理也 and 石原聖也 and 角嶋邦之 and 筒井一生 and 小椋厚志 and 若林整},
  title = {大面積集積化に向けたスパッタ二次元半導体 MoS2 薄膜のTop-gate nMISFETs チャネル応用},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100816742,
  author = {谷川 晴紀 and 松浦 賢太朗 and 濱田 昌也 and 坂本 拓朗 and 宗田 伊理也 and 星井 拓也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100816740,
  author = {五十嵐 智 and 松浦 賢太朗 and 濱田 昌也 and 谷川 晴紀 and 坂本 拓朗 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {保護膜を通したフォーミングガスアニールによるスパッタMoS2 膜の結晶性改善},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904004,
  author = {大橋 匠 and 坂本 拓朗 and 松浦 賢太朗 and 清水 淳一 and 外山 真矢人 and 石原 聖也 and 日比野 祐介 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 小椋 厚志 and 若林 整},
  title = {Migration制御したスパッタリング法による2次元層状MoS2成膜},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100904005,
  author = {坂本 拓朗 and 大橋 匠 and 松浦 賢太朗 and 宗田 伊理也 and 角嶋 邦之 and 筒井 一生 and 若林 整},
  title = {スパッタの低パワー化によるMoS2薄膜のキャリヤ濃度低減},
  booktitle = {},
  year = 2018,
}