国際会議発表 (査読有り)

• W. Li, H. Ho Hoang, S. Takahashi, Y. Hirayama, Y. Kato, P. N. Hai. Growth of Highly Textured BiSb Topological Insulator on Si/SiOx substrates for Spin-Orbit Torque Devices Using TiOx/ MgO Buffer Layers, International Conference of Asian Union of Magnetics Societies (IcAUMS 2025), Feb. 2025.
• Hoang Huy Ho, Wentao Li, Shigeki Takahashi, Yoshiyuki Hirayama, Yushi Kato, Pham Nam Hai. Large spin orbit torque induced by high temperature annealed BiSb topological insulator on oxidized Si substrates, 2025 Joint MMM-Intermag, Jan. 2025.

国内会議発表 (査読なし・不明)

• Pham Nam Hai, Kota Ejiri, Li Wentao, Shuzo Oeda, Yun Jaeyeon, Masaaki Tanaka. Large anomalous Nernst effect above room temperature in (In,Fe)Sb ferromagnetic semiconductor, The 73th JSAP Spring meeting 2026, Mar. 2026.
• Wentao Li, Hoang Huy Ho, Xiaokun Yan, Pham Van Thuan, Shigeyuki Hirayama, Yushi Kato, Pham Nam Hai. Large Spin-Orbit Torque Induced by Highly Textured BiSb(012) Topological Insulator Deposited on Si/SiO2 Substrates Using Oxide Buffer/Seed Stack, The 73th JSAP Spring meeting 2026, Mar. 2026.
• P. V. Thuan, H. H. Huy, L. Wentao, S. Takahashi, Y. Kato, S. Hirayama, P. N. Hai. Large spin Hall effect in BiSb topological insulator and perpendicularly magnetized CoFeB heterojunctions with oxide buffer and interfacial layers, Science Tokyo SPRING (MD) Retreat 2025, Nov. 2025.
• Pham Van Thuan, Ho Hoang Huy, Li Wentao, S. Takahashi, Y. Kato, S. Hirayama, Pham Nam Hai. Large spin Hall effect in BiSb topological insulator and perpendicularly magnetized CoFeB heterojunctions with oxide buffer and interfacial layers, The 86th JSAP Autumn Meeting 2025, Sept. 2025.
• L. Wentao, H. H. Huy, S. Takahashi, Y. Hirayama, Y. Kato, P. N. Hai. Growth and evaluation of highly textured BiSb(001) topological insulator on Si/SiOx, The 85th JSAP Autumn Meeting 2024, Sept. 2024.
• H. H. Huy, L. Wentao, S. Takahashi, Y. Hirayama, Y. Kato, P. N. Hai. Spin Hall effect in annealed BiSb topological thin films deposited on Si/SiOx substrates, The 85th JSAP Autumn Meeting 2024, Sept. 2024.

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