@article{CTT100932430,
  author = {Quang Le and Brian R. York and Cherngye Hwang and Xiaoyong Liu and Lei Xu and Son Le and Maki Maeda and Tuo Fan and Yu Tao and Hisashi Takano and Min Liu and Zhang Ruixian and Shota Namba and Pham Nam Hai},
  title = {Thermal reliability and spin Hall angle of highly textured and epitaxial Bi0.9Sb0.1(012) topological insulator},
  journal = {Japanese Journal of Applied Physics},
  year = 2025,
}

@article{CTT100930680,
  author = {Quang Le and Xiaoyong Liu and Lei Xu and Brian R. York and Cherngye Hwang and Son Le and Maki Maeda and Tuo Fan and Yu Tao and Hisashi Takano and Min Liu and Zhang Ruixian and Shota Namba and Pham Nam Hai},
  title = {Effects of metal, oxide, and hybrid metal-oxide interlayers on spin–orbit torque in BiSb topological insulator and magnetic interfaces},
  journal = {Journal of Applied Physics},
  year = 2025,
}

@article{CTT100927961,
  author = {Min Liu and Zhang Ruixian and Quang Le and Brian York and Cherngye Hwang and Xiaoyong Liu and Michael Gribelyuk and Xiaoyu Xu and Son Le and Maki Maeda and Tuo Fan and Yu Tao and Hisashi Takano and Pham Nam Hai},
  title = {Spin Hall magnetic field sensing device using topological insulator},
  journal = {Applied Physics Letters},
  year = 2024,
}

@article{CTT100927964,
  author = {Quang Le and Brian R. York and Cherngye Hwang and Xiaoyong Liu and Michael A. Gribelyuk and Son Le and Lei Xu and Jason James and Jose Ortega and Maki Maeda and Tuo Fan and Hisashi Takano and Min Liu and Zhang Ruixian and Shota Namba and Pham Nam Hai},
  title = {Transport and material properties of doped BiSbX topological insulator films grown by physical vapor deposition},
  journal = {Japanese Journal of Applied Physics},
  year = 2024,
}

@article{CTT100909038,
  author = {Zhang Ruixian and Ho Hoang Huy and Takanori Shirokura and Pham Nam Hai and Quang Le and Brian York and Cherngye Hwang and Xiaoyong Liu and Michael Gribelyuk and Xiaoyu Xu and Son Le and Maki Maeda and Tuo Fan and Yu Tao and Hisashi Takano},
  title = {High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers},
  journal = {Applied Physics Letters},
  year = 2024,
}

@article{CTT100905206,
  author = {Ho Hoang Huy and Zhang Ruixian and Takanori Shirokura and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai},
  title = {Integration of BiSb Topological Insulator and CoFeB/MgO With Perpendicular Magnetic Anisotropy Using an Oxide Interfacial Layer for Ultralow Power SOT-MRAM Cache Memory},
  journal = {IEEE Transactions on Magnetics},
  year = 2023,
}

@inproceedings{CTT100928745,
  author = {Ruixian Zhang and Quang Le and Xiaoyong Liu and Lei Xu and Brian R. York and Cherngye Hwang and Son Le and Maki Maeda and Fan Tuo and Hisashi Takano and Min Liu and Shota Namba and Pham Nam Hai},
  title = {Study of Metal, Oxide, and Hybrid Metal-Oxide Interlayers for optimizing Spin-Orbit torque in BiSb Topological Insulator and Magnetic Interfaces},
  booktitle = {},
  year = 2025,
}

@inproceedings{CTT100928744,
  author = {MIN LIU and Ruixian Zhang and Quang Le and Brian York and Cherngye Hwang and Xiaoyong Liu and Michael Gribelyuk and Xiaoyu Xu and Son Le and Maki Maeda and Tuo Fan and Yu Tao and Hisashi Takano and Pham Nam Hai},
  title = {High performance spin Hall sensing device using BiSb topological insulator},
  booktitle = {},
  year = 2025,
}

@inproceedings{CTT100930690,
  author = {M. Liu and R. Zhang and Q. Le and B. York and C. Hwang and X. Liu and M. Gribelyuk and X. Xu and S. Le and M. Maeda and F. Tuo and Y. Tao and H. Takano and P. N. Hai},
  title = {Spin Hall sensor using topological insulator},
  booktitle = {},
  year = 2025,
}

@inproceedings{CTT100930694,
  author = {Y. Hu and K. Sato and R. Zhang and K. Ishida and P. N. Hai},
  title = {Growth of Co thin Films with Low Roughness by ALD for 3D Magnetic Memory},
  booktitle = {},
  year = 2025,
}

@inproceedings{CTT100930684,
  author = {F. Tuo and Q. Le and B. R. York and C. Hwang and X. Liu and M. A. Gribelyuk and S. Le and L. Xu and J. James and J. Ortega and M. Maeda and Y. Tao and H. Takano and M. Liu and R. Zhang and S. Namba and P. N. Hai},
  title = {Doped BiSbX Topological Insulator For Spin-Orbit Torque Devices},
  booktitle = {},
  year = 2025,
}

@inproceedings{CTT100916626,
  author = {Z. Ruixian and H. H. Huy and Q. Le and B. York and C. Hwang and X. Liu and M. Gribelyuk and X. Xu and S. Le and M. Maeda and F. Tuo and Y. Tao and H. Takano and T. Shirokura and P. N. Hai},
  title = {High spin Hall angle in heterostructures of BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100908547,
  author = {Ruixian Zhang and Ho Hoang Huy and Takanori Shirokura and Pham Nam Hai and Quang Le and Brian R. York and Cherngye Hwang and Xiaoyong Liu and Xiaoyu Xu and Son Le and Michael Gribelyuk and Hisashi Takano and Maki Maeda and Fan Tuo and Yu Tao},
  title = {High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100905211,
  author = {Ho Hoang Huy and Zhang Ruixian and Takanori Shirokura and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai},
  title = {Large spin Hall effect in BiSb topological insulator/CrOx/CoFeB/MgO with perpendicular magnetic anisotropy for ultralow power SOT-MRAM},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100900901,
  author = {Ho Hoang Huy and R. Zhang and T. Shirokura and S. Takahashi and Y. Hirayama and Pham Nam Hai},
  title = {Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power SOT-MRAM cache memory},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100888691,
  author = {Ho Hoang Huy and Zhang Ruixian and Takanori Shirokura and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai},
  title = {Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power spin-orbit torque magnetic memory},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100886126,
  author = {Zhang Ruixian and Takanori Shirokura and Tuo Fan and Pham Nam Hai},
  title = {Fabrication and evaluation of fully sputtered topological insulator/perpendicularly magnetized CoFeB/MgO multilayers for SOT-MRAM application},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100879796,
  author = {Ruixian Zhang and Shirokura Takanori and Tuo Fan and Pham Nam Hai},
  title = {Fabrication and evaluation of BiSb topological insulator / perpendicular magnetization CoFeB multilayer film for SOT-MRAM application},
  booktitle = {},
  year = 2022,
}