@article{CTT100932465,
  author = {An Li and Takuya Hoshii and Kazuo Tsutsui and Hitoshi Wakabayashi and Kuniyuki Kakushima},
  title = {Interface properties of SiC MOS devices with NH3 plasma nitridation of ultrathin SiO2 interfacial layer},
  journal = {Japanese Journal of Applied Physics},
  year = 2025,
}

@article{CTT100932475,
  author = {An Li and Takuya Hoshii and Kazuo Tsutsui and Hitoshi Wakabayashi and Kuniyuki Kakushima},
  title = {Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma},
  journal = {Japanese Journal of Applied Physics},
  year = 2024,
}

@misc{CTT100932461,
  author = {An Li},
  title = {A Study on Gate Dielectric Process for SiC MOS Structure with High Reliability},
  year = ,
}

@misc{CTT100932894,
  author = {An Li},
  title = {A Study on Gate Dielectric Process for SiC MOS Structure with High Reliability},
  year = ,
}



@phdthesis{CTT100932461,
  author = {An Li},
  title = {A Study on Gate Dielectric Process for SiC MOS Structure with High Reliability},
  school = {東京科学大学},
  year = ,
}

@phdthesis{CTT100932894,
  author = {An Li},
  title = {A Study on Gate Dielectric Process for SiC MOS Structure with High Reliability},
  school = {東京科学大学},
  year = ,
}