論文

• Keisuke Ide, Mitsuho Kikuchi, Masato Ota, Masato Sasase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In–Ga–Zn–O thin-film transistors, Jpn. J. Appl. Phys., Vol. 56, pp. 03BB03-1 - 5, Jan. 2017.

国際会議発表 (査読有り)

• K. Ide, M. Ota, T. Katase, K. Takenaka, Y. Setsuhara, A. Hiraiwa, H. Kawarada, H. Hiramatsu, H. Hosono, T. Kamiya. Effects of film microstructures on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors, International Conference on Materials and Systems for Sustainability (ICMaSS) 2017, Sept. 2017.

国際会議発表 (査読なし・不明)

• Keisuke Ide, Masato Ota, Takayoshi Katase, Hidenori Hiramatsu, Shigenori Ueda, Hideo Hosono, Toshio Kamiya. Depth Analysis of Near Valence Band Mximum Defect States in Amorphous Oxide Semiconductors: In-Ga-Zn-O, Americas international Meeting on Electrochemistry and Solid state science (AiMES), Sept. 2018.

国内会議発表 (査読なし・不明)

• 井手 啓介, 太田 雅人, 岸田 陽介, 片瀬 貴義, 平松 秀典, 上田 茂典, 雲見 日出也, 細野 秀雄, 神谷 利夫. [講演奨励賞受賞記念講演] 全反射硬X線光電子分光法によるアモルファス酸化物半導体の価電子帯直上欠陥の深さ方向分布, 第65回応用物理学会春季学術講演会, Mar. 2018.

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