@inproceedings{CTT100658390,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A Novel Ohmic Contact Process for n-Ge Substrates},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654594,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characterization of atomically flat NiSi2 Schottky diode},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654678,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and 中塚理 and パールハットアヘメト and Hiroshi Nohira and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Properties of Ultrathin-Nickel-Silicide Schottky Diodes on Si(100)},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654590,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A novel Ni silicidation technology for Schottky diode formation},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658334,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Stacked Ni-Silicidation Process for Schottky Barrier FET},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100657252,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characterization of atomically flat NiSi2 Schottky diode”, Ni silicidation for Si Fin and nanowire strucures},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657215,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {A novel Ni silicidation technology for Schottky diode formation},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657583,
  author = {Kuniyuki KAKUSHIMA and Yuta Tamura and 吉原亮 and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Interface Controlled Stacked Ni Silicidation Process with Schottky Barrier Height Controllability},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657633,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A Proposal of Schottky Barrire Height Tuning Method with Interface Controlled Ni/Si Stacked Silicidation Process},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657639,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Thermally stable NiSi2 for Ge contact with Schottky barrirer height modulation capability},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100628819,
  author = {田村雄太 and 角嶋邦之 and 中塚 理 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {NiとSiの積層薄膜によって形成したシリサイドのシート抵抗に対する熱処理温度の影響},
  booktitle = {},
  year = 2011,
}