@article{CTT100658723,
  author = {DARYOUSH ZADEH and Hiroshi Oomine and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and Hiroshi Nohira and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode},
  journal = {Solid-State Electronics},
  year = 2013,
}

@article{CTT100621281,
  author = {DARYOUSH ZADEH and Soshi Sato and Kuniyuki KAKUSHIMA and A. Srivastava and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and C.K. Sarkar and HIROSHI IWAI},
  title = {Effects of La2O3  incorporation in HfO2 gated nMOSFETs on low-frequency noise},
  journal = {Microelectronics Reliability},
  year = 2011,
}

@inproceedings{CTT100672372,
  author = {DARYOUSH ZADEH and Hiroshi Oomine and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Low DitHigh-k/In0.53Ga0.47As Gate Stack with CET down to 0.73 nm and Thermally Stable Silicide Contact by Suppression of Interfacial Reaction},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673379,
  author = {ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 大嶺洋 and 角嶋邦之 and 岩井洋},
  title = {Highly Scalable La2O３/InGaAs Gate Stack with Low Interface State Density},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673380,
  author = {大嶺洋 and ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 角嶋邦之 and 岩井洋},
  title = {La2O３ gate dielectrics for InGaAs channel using ALD process},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673418,
  author = {ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 大嶺洋 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {低界面準位とsub-nm CETを有するLa2O３/ In0.53Ga0.47Asゲートスタックの実現},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673383,
  author = {ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 大嶺洋 and 岩井洋},
  title = {低界面準位とsub-nm CETを有するLa2O３/ In0.53Ga0.47Asゲートスタックの実現},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673467,
  author = {大嶺洋 and ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 角嶋邦之 and 西山彰 and 杉井信之 and 片岡好則 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {La2O３/ InGaAs界面ラフネスに及ぼすALDプロセスの影響},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672961,
  author = {Hiroshi Oomine and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and Akira Nishiyama and Nobuyuki Sugii and 片岡好則 and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Effect of pretreatment for high-/k//InGaAs interface property},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100669175,
  author = {Hiroshi Oomine and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Electrical characterization of atomic layer deposited La2O3 films on In0.53Ga0.47AAs substrates},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100831028,
  author = {DARYOUSH ZADEH and Hiroshi Oomine and Yuya Suzuki and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654572,
  author = {DARYOUSH ZADEH and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Characterization of metal Schottky junction for InGaAs substrate},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662340,
  author = {鹿国強 and 大嶺洋 and ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 角嶋邦之 and 西山彰 and 杉井信之 and 片岡好則 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {ALD堆積条件によるLa2O３/In0.53Ga0.47Asキャパシタの電気特性への影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100657357,
  author = {Ryuji Hosoi and Yuya Suzuki and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Characterization of matal Schottky junction for In0.53Ga0.47AAs substrates},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657212,
  author = {Ryuji Hosoi and Yuya Suzuki and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657193,
  author = {DARYOUSH ZADEH and Ryuji Hosoi and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characterization and improvement of high-k/InGaAs devices},
  booktitle = {},
  year = 2012,
}

@misc{CTT100666955,
  author = {DARYOUSH ZADEH},
  title = {A study on Semiconductor Interfaces with Rare Earth Oxide and Ni Silicides for High Performance InGaAs MOSFETs},
  year = 2013,
}

@misc{CTT100667092,
  author = {DARYOUSH ZADEH},
  title = {A study on Semiconductor Interfaces with Rare Earth Oxide and Ni Silicides for High Performance InGaAs MOSFETs},
  year = 2013,
}

@misc{CTT100667190,
  author = {DARYOUSH ZADEH},
  title = {A study on Semiconductor Interfaces with Rare Earth Oxide and Ni Silicides for High Performance InGaAs MOSFETs},
  year = 2013,
}



@phdthesis{CTT100666955,
  author = {DARYOUSH ZADEH},
  title = {A study on Semiconductor Interfaces with Rare Earth Oxide and Ni Silicides for High Performance InGaAs MOSFETs},
  school = {東京工業大学},
  year = 2013,
}

@phdthesis{CTT100667092,
  author = {DARYOUSH ZADEH},
  title = {A study on Semiconductor Interfaces with Rare Earth Oxide and Ni Silicides for High Performance InGaAs MOSFETs},
  school = {東京工業大学},
  year = 2013,
}

@phdthesis{CTT100667190,
  author = {DARYOUSH ZADEH},
  title = {A study on Semiconductor Interfaces with Rare Earth Oxide and Ni Silicides for High Performance InGaAs MOSFETs},
  school = {東京工業大学},
  year = 2013,
}