@article{CTT100584674,
  author = {Benjamin Henri Jose Pruvost and K. Uchida and H. Mizuta and S. Oda},
  title = {Design optimization of NEMS switches for suspended-gate single-electron transistor applications},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2009,
}

@article{CTT100591371,
  author = {Benjamin Henri Jose Pruvost and Ken Uchida and hiroshi mizuta and SHUNRI ODA},
  title = {Design of New Logic Architectures utilizing Optimized Suspended-Gate Single-Electron Transistors},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2009,
}

@article{CTT100566697,
  author = {M. Manoharan and Benjamin Henri Jose Pruvost and Hiroshi Mizuta and Shunri Oda},
  title = {Impact of key circuit parameters onsignal-to-noise ratio characteristics for theradio-frequency single electron transistors},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2008,
}

@article{CTT100585531,
  author = {Benjamin Henri Jose Pruvost and H. Mizuta and S. Oda},
  title = {Voltage-limitation-free analytical single-electron transistor model incorporating the effects of spin-degenerate discrete energy states},
  journal = {Journal of Applied Physics},
  year = 2008,
}

@article{CTT100566692,
  author = {B. Pruvost and H. Mizuta and S. Oda},
  title = {3-D Design and Analysis of Functional NEMS-gate MOSFETs and SETs},
  journal = {IEEE Transactions on Nanotechnology},
  year = 2007,
}

@inproceedings{CTT100600820,
  author = {H. Mizuta and M. A. G-. Ramirez and F. A. Hassani and M. A. Ghiass and Y. Tsuchiya and T. Nagami and B. Pruvost and J. Ogi and S. Sawai and S. Oda and M. Okamoto},
  title = {Multi-scale Simulation of Hybrid Silicon Nano-electromechanical (NEM) Information Devices},
  booktitle = {},
  year = 2009,
}