論文

• Benjamin Henri Jose Pruvost, K. Uchida, H. Mizuta, S. Oda. Design optimization of NEMS switches for suspended-gate single-electron transistor applications, IEEE Transactions on Nanotechnology, 8 (2), 174-184, Mar. 2009.
• Benjamin Henri Jose Pruvost, Ken Uchida, hiroshi mizuta, SHUNRI ODA. Design of New Logic Architectures utilizing Optimized Suspended-Gate Single-Electron Transistors, IEEE Transactions on Nanotechnology, 2009.
• M. Manoharan, Benjamin Henri Jose Pruvost, Hiroshi Mizuta, Shunri Oda. Impact of key circuit parameters onsignal-to-noise ratio characteristics for theradio-frequency single electron transistors, IEEE Transactions on Nanotechnology, Vol. 7, No. 8, May 2008.
• Benjamin Henri Jose Pruvost, H. Mizuta, S. Oda. Voltage-limitation-free analytical single-electron transistor model incorporating the effects of spin-degenerate discrete energy states, Journal of Applied Physics, Vol. 103, pp. 054508 (10 pages), Mar. 2008.
• B. Pruvost, H. Mizuta, S. Oda. 3-D Design and Analysis of Functional NEMS-gate MOSFETs and SETs, IEEE Transactions on Nanotechnology, Vol. 6 (2), pp. 218-224, Mar. 2007.

国際会議発表 (査読有り)

• H. Mizuta, M. A. G-. Ramirez, F. A. Hassani, M. A. Ghiass, Y. Tsuchiya, T. Nagami, B. Pruvost, J. Ogi, S. Sawai, S. Oda, M. Okamoto. Multi-scale Simulation of Hybrid Silicon Nano-electromechanical (NEM) Information Devices, 8th International Conference on Global Research and Education – Inter-Academia, Sept. 2009.

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