論文

• Shuhei Yoshita, Ryosuke Tamura, Dai Taguchi, Martin Weis, Eun Ju Lim, Takaaki Manaka, MITSUMASA IWAMOTO. Displacement Current analysis of carrier behavior in pentacene field effect transistor with poly(vinylidene fluoride and tetrafluoroethylene) gate insulator, Journal of Applied Physics, Vol. 106, No. 2, pp. 24505, Aug. 2009.
• Ryosuke Tamura, Shuhei Yoshita, Eun Ju Lim, Takaaki Manaka, MITSUMASA IWAMOTO. Analysis of Pentacene Field-Effect Transistor with a Ferroelectric P(VDF-TeFE) Gate Insulator as an Element of Maxwell-Wagner Effect System, Japanese Journal of Applied Physics, Vol. 48, No. 2, pp. 21501, Aug. 2009.
• Ryosuke Tamura, Shuhei Yoshita, Eun Ju Lim, Takaaki Manaka, MITSUMASA IWAMOTO. Analysis of Pentacene Field-Effect Transistor with a Ferroelectric P(VDF-TeFE) Gate Insulator as an element of Maxwell-Wagner Effect System, Japanese Journal of Applied Physics, Vol. 48, pp. 21501, Feb. 2009.
• Ryosuke Tamura, Eunju Lim, Shuhei Yoshita, Takaaki Manaka, Mitsumasa Iwamoto. Analysis of threshold voltage shift of pentacene field effect transistor with ferroelectric gate insulator as a Maxwell–Wagner effect, Thin Solid Films, Vol. 516, No. 9, pp. 2753-2757, Mar. 2008.
• 田村亮祐, 吉田周平, LimEun, 間中 孝彰, 岩本光正. Pentacene field effect transistor with ferroelectric gate insulator as a Maxwell-Wagner effect element, Japanese Journal of Applied Physics, Vol. 47, pp. 476-479, Jan. 2008.

国際会議発表 (査読有り)

• Ryosuke Tamura, Shuhei Yoshita, Eun Ju Lim, Takaaki Manaka, MITSUMASA IWAMOTO. Carrier injection and accumulation of pentacene field effect transistor with P(VDF-TeFE) gate insulator, Solid State Device and Materials 2008 (SSDM 2008), pp. 1144, Sept. 2008.
• Ryosuke Tamura, Shuhei Yoshita, Eun Ju Lim, Takaaki Manaka, MITSUMASA IWAMOTO. Analysis of Pentacene Field-Effect Transistor with a Ferroelectric P(VDF-TeFE) Gate Insulator as an element of Maxwell-Wagner Effect System, MRS spring meeting 2008, May 2008.
• Ryosuke Tamura, Shuhei Yoshita, Eun Ju Lim, Takaaki Manaka, MITSUMASA IWAMOTO. Analysis of charge accumulation in pentacene field effect transistor with ferroelectric gate insulator on the basis of Maxwell-Wagner model, 2007 International Conference on Solid State Device and Materials (SSDM 2007), Japnanese Journal of Applied Physics, Vol. 47, pp. 3170-3173, Apr. 2008.

国内会議発表 (査読有り)

• 田村亮祐, 吉田周平, LimEun, 間中孝彰, 岩本光正. 顕微時間分解SHG測定による強誘電性ゲート絶縁膜を用いたペンタセンFETの評価, pp. 1189, Sept. 2008.
• 田村亮祐, 吉田周平, LimEun, 間中孝彰, 岩本光正. ポリイミド絶縁膜を用いたペンタセンFETの閾値シフトの効果, pp. 1385, Mar. 2008.
• 田村亮祐, 吉田周平, LimEun, 間中孝彰, 岩本光正. Maxwell Wagnerモデルに基づいた強誘電性ゲート絶縁膜を持つペンタセンFETの解析II, 第68回応用物理学会学術講演会, p. 1356, Sept. 2007.
• 田村亮祐, 吉田周平, 林銀珠, 間中孝彰, 岩本光正. Maxwell Wagnerモデルに基づいた強誘電性ゲート絶縁膜を持つペンタセンFETの解析, 2007年(平成19年)春季 第54回応用物理学関連連合講演会, pp. 1414, Mar. 2007.

国際会議発表 (査読なし・不明)

• Shuhei Yoshita, Ryosuke Tamura, Martin Weis, Eunju Lim, Takaaki Manaka, Mitsumasa Iwamoto. Analysis of carrier behavior in pentacene FET withP(VDF-TeFE) gate insulator using displacement current measurement, The 2nd IEEE Nanotechnology Materials and Devices Conference(NMDC2008), Oct. 2008.

国内会議発表 (査読なし・不明)

• 吉田 周平, 田村 亮祐, 田口 大, 林 銀珠, 間中 孝彰, 岩本 光正. 変位電流法によるP(VDF-TeFE)ゲート絶縁膜を持つペンタセンFETの解析, 2009年春季 第56回応用物理学関係連合講演会, Mar. 2009.
• 吉田 周平, 田村 亮祐, 林 銀珠, 間中 孝彰, 岩本光正. 強誘電体をゲート絶縁膜にもつペンタセンFETを用いたソース・ドレイン電極の影響の評価, 電子情報通信学会技術研究報告, 信学技報, Vol. 108, No. 112, 53, May 2008.

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