論文

• Abe Katsumi, Kamiya Toshio, Hosono Hideo. Quantum confinement effects in amorphous In-Ga-Zn-O thin-film transistors with quantum well channel, Applied Physics Letters, Nov. 2024.
• Jakub Grochowski, Yuichiro Hanyu, Katsumi Abe, Jakub Kaczmarski, Jan Dyczewski, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Origin of Lower Film Density and Larger Defect Density in Amorphous In-Ga-Zn-O Deposited at High Total Pressure, J. Disp. Technol., Vol. 11, pp. 523-527, 2015.
• Kay Domen, Takaya Miyase, Katsumi Abe, Hideo Hosono, Toshio Kamiya. Positive Gate Bias Instability Induced by Diffusion of Neutral Hydrogen in Amorphous In–Ga–Zn–O Thin-Film Transistor, IEEE Electron Dev. Lett., Vol. 35, pp. 832-834, 2014.
• Kazuo Yamada, Kenji Nomura, Katsumi Abe, Satoshi Takeda, Hideo Hosono. Examination of the ambient effects on the stability of amorphous indium-gallium-zinc oxide thin film transistors using a laser-glass-sealing technology, Appl. Phys. Lett., Vol. 105, p. 133503, 2014.
• Y. Hanyu, K. Abe, K. Domen, K. Nomura, H. Hiramatsu, H. Kumomi, H. Hosono, T. Kamiya. Effects of High-Temperature Annealing on Operation Characteristics of a-In-Ga-Zn-O TFTs, J. Displ. Technol., pp. 979-983, 2014.
• K. Domen, T. Miyase, K. Abe, H. Hosono, T. Kamiya. Positive-Bias Stress Test on Amorphous In–Ga–Zn–O Thin Film Transistor: Annealing-Temperature Dependence, J. Displ. Technol., Vol. 10, pp. 975-978, 2014.
• Katsumi Abe, Ayumu Sato, Kenji Takahashi, Hideya Kumomi, Toshio Kamiya, Hideo Hosono. Mobility^- and temperature-dependent device model for amorphous In–Ga–Zn–O thin-film transistors, Thin Solid Films, Vol. 559, pp. 40-43, 2013.
• Hiromichi Ohta, Taku Mizuno, Shijian Zheng, Takeharu Kato, Yuichi Ikuhara, Katsumi Abe, Hideya Kumomi, Kenji Nomura, Hideo Hosono. Unusually Large Enhancement of Thermopower in an Electric Field InducedTwo-Dimensional Electron Gas, Advanced. Materials, Vol. 24, pp. 740-744, 2012.
• Katsumi Abe, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Optical evidence for quantization in transparent amorphous oxide semiconductor superlattice, Phys. Rev. B Rapid Communications, Vol. 86, pp. 081202(R)-1 - 4, 2012.
• Katsumi Abe, Kenji Takahashi, Ayumu Sato, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Operation model with carrier-density dependent mobility for amorphous In-Ga-Zn-O thin-film transistors, Thin Solid Films, Vol. 520, pp. 3791-3795, 2012.

国際会議発表 (査読有り)

• Yu-Shien Shiah, Joonho Bang, Katsumi Abe, Junghwan Kim, Hideo Hosono. NBTS-free Oxide TFTs with High Mobility of 40 cm2/Vs: A Possible Origin for NBTS Instability, Society for Information Display (SID), SID international symposium digest of technical papers, pp. 1349-1350, May 2019.
• TOSHIO KAMIYA, K. Kimoto, N. Ohashi, Katsumi Abe, Yuichirou Hanyu, hideya kumomi, HIDEO HOSONO. Electron-Beam-Induced Crystallization of Amorphous In-Ga-Zn-O Thin Films Fabricated by UHV Sputtering, Proc. IDW'13, p. 280, Dec. 2013.
• K. Abe, H. Kumomi, T. Kamiya, H. Hosono. Modeling of Transparent Amorphous Oxide Semiconductor Thin-Film Transistor, Proc. IDW'13, p. 311, Dec. 2013.

特許など

• 細野秀雄, 安部勝美, 山田　和夫, 竹田　諭司　. 半導体膜、薄膜トランジスタ、およびこれらの製造方法. 特許. 公開. 国立大学法人東京工業大学, 旭硝子株式会社. 2013/08/16. 特願2013-169063. 2015/02/23. 特開2015-037164. 2015.

学位論文

• TFT Modeling of Amorphous IGZO and Quantum Effect in Its Superlattice,  Exam Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2013/09/25,   
• TFT Modeling of Amorphous IGZO and Quantum Effect in Its Superlattice,  Outline,  Doctor (Engineering),  Tokyo Institute of Technology,  2013/09/25,   
• TFT Modeling of Amorphous IGZO and Quantum Effect in Its Superlattice,  Thesis,  Doctor (Engineering),  Tokyo Institute of Technology,  2013/09/25, 
• TFT Modeling of Amorphous IGZO and Quantum Effect in Its Superlattice,  Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2013/09/25,   

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