@article{CTT100659660,
  author = {Aya Shindome and Yu Doioka and Nobuyasu Beppu and Shunri Oda and Ken Uchida},
  title = {Experimental Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and Multilayer Exfoliated Graphene Nanoribbons},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@inproceedings{CTT100677541,
  author = {新留彩 and 高橋綱己 and 小田俊理 and 内田建},
  title = {グラフェン抵抗変化型メモリの3端子動作に関する研究},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100664443,
  author = {Aya Shindome and Tsunaki Takahashi and Shunri Oda and Ken Uchida},
  title = {Experimental Study on SET/RESET Conditions for Graphene ReRAM},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100664454,
  author = {新留彩 and 高橋綱己 and 小田俊理 and 内田建},
  title = {グラフェン抵抗変化型メモリのSET/RESET条件に関する研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652960,
  author = {新留 彩 and 別府伸耕 and 高橋綱己 and 小田俊理 and 内田 建},
  title = {架橋・非架橋構造のグラフェン抵抗変化型メモリの書込・消去特性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652985,
  author = {新留 彩 and 福田祐樹 and 小田俊理 and 内田 建},
  title = {ユニバーサル曲線を超えるMOSFET移動度の観測とその物理的起源の解明},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652974,
  author = {新留 彩 and 福田裕樹 and 小田俊理 and 内田 建},
  title = {架橋多層グラフェンナノリボンにおける電荷数の温度依存性},
  booktitle = {},
  year = 2012,
}