@article{CTT100740918,
  author = {Junichi Hasegawa and Loris Pace and Luong Viêt Phung and Mutsuko Hatano and Dominique Planson},
  title = {Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation},
  journal = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
  year = 2017,
}

@article{CTT100704421,
  author = {M. Shimizu and T. Makino and T. Iwasaki and J. Hasegawa and K. Tahara and W. Naruki and H. Kato and S. Yamasaki and M. Hatano},
  title = {Charge state modulation of nitrogen vacancy centers in diamond by applying a forward voltage across a p-i-n junction},
  journal = {Diamond Relat. Mater.},
  year = 2016,
}

@article{CTT100683458,
  author = {J. Hasegawa and M. Furuhashi and S. Nakata and T. Iwasaki and T. Kodera and T. Nishimura and M. Hatano and M  Noguchi},
  title = {Analysis of effect of gate oxidation at SiC MOS interface on  threshold-voltage shift using deep-level transient spectroscopy},
  journal = {Jpn. J. Appl. Phys.},
  year = 2015,
}

@article{CTT100678924,
  author = {J.Hasegawa and K.Konishi and Y.Nakamura and K.Otsuka and S.Nakata and Y. Nakamine and T. Nishimura and M. Hatano},
  title = {Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation},
  journal = {Materials Science Forum},
  year = 2014,
}

@inproceedings{CTT100738868,
  author = {Junichi Hasegawa and Loris Pace and Luong Viêt Phung and Mutsuko Hatano and Dominique Planson},
  title = {Simulation-based study on the optical beam intensity dependence of the optically triggered 4H-SiC thyristors turn-on operation},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100707797,
  author = {清水 麻希 and 牧野 俊晴 and Amici Renato Goes and 岩崎 孝之 and 長谷川 淳一 and 田原 康佐 and 成木 航 and 加藤 宙光 and 竹内 大輔 and 山崎 聡 and 波多野 睦子},
  title = {ダイヤモンドnin接合におけるNVセンタの電荷状態の制御},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100707710,
  author = {国崎 愛子 and 長谷川 淳一 and 岩崎 孝之 and 野口 宗隆 and 古橋 壮之 and 渡邊 寛 and 中田 修平 and 小寺 哲夫 and 波多野 睦子},
  title = {界面準位密度を考慮したSiC-MOSFET伝達特性モデルの構築},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100707805,
  author = {M.Shimizu and T.Makino and R.G.Amici and T.Iwasaki and J.Hasegawa and K.Tahara and W.Naruki and H.Kato and D.Takeuchi and S.Yamasaki and M.Hatan},
  title = {Charge state modulation of nitrogen vacancy center in diamond n-i-n junction},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100707807,
  author = {J. Hasegawa and T. Iwasaki and T. Kodera and M. Hatano},
  title = {Measurement of the SiO2/SiC interface state density in a wide energy-level range using capacitance transient spectroscopy},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100709180,
  author = {清水麻希 and 牧野俊晴 and 岩崎孝之 and 長谷川淳一 and 田原康佐 and 成木 航 and 加藤宙光 and 山崎 聡 and 波多野睦子},
  title = {ダイヤモンドp-i-n接合におけるNVセンタの電荷状態の変化},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100709183,
  author = {Junichi Hasegawa and Munetaka Noguchi and Masayuki Furuhashi and Shuhei Nakata and Takayuki Iwasaki and Tetsuo Kodera and Tadashi Nishimura and Mutsuko Hatano},
  title = {Measurement of the SiO2/SiC interface state density in a wid energy-level range using capacitance transient spectroscopy},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100697057,
  author = {M.Shimisu and T.Makino and T.Iwasaki and J.Hasegawa and K.Tahara and W.Naruki and H.Kato and S.Yamasaki and M.Hatano},
  title = {Fabrication of n-p-n junctions for stable negatively charged nitrogen vacancy centers},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100694152,
  author = {J. Hasegawa and T. Kodera and T. Iwasaki and M. Hatano},
  title = {Effect of Gate Oxide Process at SiC-MOS Interface on Threshold Voltage Shift Analyzed by DLTS},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679662,
  author = {長谷川淳一 and 須藤建瑠 and 岩崎孝之 and 小寺哲夫 and 古橋壮之 and 野口宗隆 and 中田修平 and 西村正 and 波多野睦子},
  title = {DLTS法による窒化後酸化SiC-MOSFETの界面準位評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100712164,
  author = {J. Hasegawa and M.Noguchi and M.Furuhashi and S. Nakata and T.Iwasaki and T.Kodera and T.Nishimura and M.Hatano},
  title = {Effect of gate oxide process at SiC-MOS interface on threshold voltage shift analyzed by DLTS},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100681294,
  author = {長谷川淳一 and 野口宗隆 and 中田修平 and 須藤建瑠 and 岩崎孝之 and 小寺哲夫 and 古橋壮之 and 西村正 and 波多野睦子},
  title = {DLTS法による窒化後酸化SiC-MOSFETの界面準位評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100721787,
  author = {J. Hasegawa and M. Noguchi and M. Furuhashi and S. Nakata and T. Iwasaki and T. Kodera and T. Nishimura and M. Hatano},
  title = {Effect of Gate Oxide Process at SiC-MOS Interface on Threshold Voltage Shift Analyzed by DLTS},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100712167,
  author = {J. Hasegawa and T. Iwasaki and M. Hatano},
  title = {Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100665407,
  author = {J. Hasegawa and K.Konishi and Y.Nakamura and K.Otsuka and Y.Nakamine and T.Nishimura and M.Hatano},
  title = {Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation},
  booktitle = {},
  year = 2013,
}

@misc{CTT100736483,
  author = {Junichi Hasegawa},
  title = {Study of the influence of crystal defects and interface traps on SiC power device characteristics},
  year = 2017,
}

@misc{CTT100760464,
  author = {Junichi Hasegawa},
  title = {Study of the influence of crystal defects and interface traps on SiC power device characteristics},
  year = 2017,
}

@misc{CTT100736485,
  author = {Junichi Hasegawa},
  title = {Study of the influence of crystal defects and interface traps on SiC power device characteristics},
  year = 2017,
}

@misc{CTT100736484,
  author = {Junichi Hasegawa},
  title = {Study of the influence of crystal defects and interface traps on SiC power device characteristics},
  year = 2017,
}



@phdthesis{CTT100736483,
  author = {Junichi Hasegawa},
  title = {Study of the influence of crystal defects and interface traps on SiC power device characteristics},
  school = {東京工業大学},
  year = 2017,
}

@phdthesis{CTT100760464,
  author = {Junichi Hasegawa},
  title = {Study of the influence of crystal defects and interface traps on SiC power device characteristics},
  school = {東京工業大学},
  year = 2017,
}

@phdthesis{CTT100736485,
  author = {Junichi Hasegawa},
  title = {Study of the influence of crystal defects and interface traps on SiC power device characteristics},
  school = {東京工業大学},
  year = 2017,
}

@phdthesis{CTT100736484,
  author = {Junichi Hasegawa},
  title = {Study of the influence of crystal defects and interface traps on SiC power device characteristics},
  school = {東京工業大学},
  year = 2017,
}