@book{CTT100672953,
  author = {渡辺正裕},
  title = {電子情報工学ニューコース16 プログラミング概論},
  publisher = {株式会社 培風館},
  year = 2010,
}

@article{CTT100894261,
  author = {Gensai Tei and Youhei Kiyanagi and Long Liu and Masahiro Watanabe},
  title = {Near-infrared (λ ~ 1.2 µm) intersubband electroluminescence in Si/CaF<sub>2</sub> quantum cascade structures},
  journal = {Japanese Journal of Applied Physics},
  year = 2023,
}

@article{CTT100883094,
  author = {Gensai Tei and Long Liu and Masahiro Watanabe},
  title = {Design and analysis of Si/CaF<sub>2</sub> near-infrared (λ~1.7 μm) DFB quantum cascade laser for silicon photonics},
  journal = {IEICE Transactions on Electronics},
  year = 2023,
}

@article{CTT100883095,
  author = {Long Liu and Gensai Tei and Masahiro Watanabe},
  title = {Design, fabrication, and evaluation of waveguide structure using Si/CaF<sub>2</sub> heterostructure for near- and mid- infrared silicon photonics},
  journal = {IEICE Transactions on Electronics},
  year = 2023,
}

@article{CTT100861331,
  author = {Gensai Tei and Long Liu and Yohei Koyanagi and Masahiro Watanabe},
  title = {Room temperature near-infrared electroluminescence of Si/CaF<sub>2</sub> quantum cascade laser structures grown on an SOI substrate},
  journal = {Japanese Journal of Applied Physics},
  year = 2021,
}

@article{CTT100822931,
  author = {Kiyoshi Takeuchi and Munetoshi Fukui and Takuya Saraya and Kazuo Itou and Toshihiko Takakura and Shinichi Suzuki and Yohichiroh Numasawa and Naoyuki Shigyo and Kuniyuki Kakushima and Takuya Hoshii and Kazuyoshi Furukawa and Masahiro Watanabe and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Atsushi Ogura and Wataru Saito and Shin-ichi Nishizawa and Masanori Tsukuda and Ichiro Omura and Hiromichi Ohashi and Toshiro Hiramoto},
  title = {Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs},
  journal = {IEEE Trans. On Semiconductor Manufactureing},
  year = 2020,
}

@article{CTT100833073,
  author = {Yoshiro Kumagai and Satoshi Fukuyama and Hiroki Tonegawa and Kizashi Mikami and Kodai Hirose and Kanta Tomizawa and Kensuke Ichikawa and Masahiro Watanabe},
  title = {Negative differential resistance of CaF<sub>2</sub>/Si double barrier resonant tunneling diodes fabricated using plasma etching mesa isolation process},
  journal = {Japanese Journal of Applied Physics},
  year = 2020,
}

@article{CTT100781045,
  author = {千葉 明 and 安岡 康一 and 中川 茂樹 and 赤塚 洋 and 西方 敦博 and 萩原 誠 and 渡辺 正裕 and 竹内 希 and 全 俊豪 and 時岡 えい},
  title = {eラーニングを活用した工学系専門科目の理解度向上 -東京工業大学電気電子系-},
  journal = {工学教育},
  year = 2018,
}

@article{CTT100712019,
  author = {Yuya Kuwata and Keita Suda and Masahiro Watanabe},
  title = {Resistance switching memory characteristics of CaF<sub>2</sub>/Si/CaF<sub>2</sub> resonant-tunneling quantum-well heterostructures sandwiched by nanocrystalline Si secondary barrier layers},
  journal = {Appl. Phys. Express},
  year = 2016,
}

@article{CTT100684261,
  author = {Keita Suda and Yuya Kuwata and Masahiro Watanabe},
  title = {Analysis of single- and double-barrier tunneling diode structures using ultrathin CaF<sub>2</sub>/CdF<sub>2</sub>/Si multilayered heterostructures grown on Si},
  journal = {Jpn. J. Appl. Phys.},
  year = 2015,
}

@article{CTT100672550,
  author = {Junya Denda and Kazuya Uryu and Keita Suda and Masahiro Watanabe},
  title = {Resistance switching memory characteristics of Si/CaF<sub>2</sub>/CdF<sub>2</sub>/CaF<sub>2</sub>/Si resonant-tunneling quantum-well structures},
  journal = {Appl. Phys. Express},
  year = 2014,
}

@article{CTT100672482,
  author = {Junya Denda and Kazuya Uryu and Masahiro Watanabe},
  title = {Resistance Switching Memory Characteristics of Si/CaF<sub>2</sub>/CdF<sub>2</sub> Quantum-Well Structures Grown on Metal (CoSi<sub>2</sub>) Layer},
  journal = {Jpn. J. Appl. Phys.},
  year = 2013,
}

@article{CTT100672479,
  author = {T. Kanazawa and A. Morosawa and R. Fuji and T. Wada and M. Watanabe and M. Asada},
  title = {Suppression of Leakage Current of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode Structures Grown on Si(100) Substrates by Nanoarea Local Epitaxy},
  journal = {Jpn. J. Appl. Phys.},
  year = 2007,
}

@article{CTT100672431,
  author = {T. Kanazawa and M. Watanabe and M. Asada},
  title = {Room temperature negative differential resistance of CdF<sub>2</sub>/CaF<sub>2</sub> double-barrier resonant tunneling diode structures grown on Si(100) substrates},
  journal = {Appl. Phys Lett.},
  year = 2007,
}

@article{CTT100672432,
  author = {K. Jinen and K. Uchida and S. Kodaira and M. Watanabe and M. Asada},
  title = {Improvement of electroluminescence from CdF<sub>2</sub>/CaF<sub>2</sub> Intersubband light-emitting structure by trench patterning and hydrogen annealing of Si substrate},
  journal = {IEICE Electronics Express},
  year = 2006,
}

@article{CTT100672920,
  author = {Keisuke Jinen and Takeshi Kikuchi and Masahiro Watanabe and MASAHIRO ASADA},
  title = {Room-Temperature Electroluminescence from a Single-Period (CdF<sub>2</sub>/CaF<sub>2</sub>) Inter-subband Quantum Cascade Structure on Si Substrate},
  journal = {Jpn. J. Appl. Phys.},
  year = 2006,
}

@article{CTT100672429,
  author = {Y. Niiyama and T. Murata and M. Watanabe},
  title = {Optically pumped ultraviolet lasing of BeMgZnSe based quan-tum well laser structures},
  journal = {Phys. Stat. Solid. (c)},
  year = 2006,
}

@article{CTT100672423,
  author = {Y. Niiyama and T. Murata and M. Watanabe},
  title = {Ultraviolet lasing from optically pumped BeMgZnSe quantum-well laser structures},
  journal = {Appl. Phys Lett.},
  year = 2005,
}

@article{CTT100672420,
  author = {T. Yokoyama and Y. Niiyama and T Murata and M. Watanabe},
  title = {Improvement of Crystalline Quality of BeZnSe Using Buffer Layer by Migration Enhanced Epitaxy on GaP(001) Substrate},
  journal = {Jpn. J. Appl. Phys.},
  year = 2005,
}

@article{CTT100672428,
  author = {Y. Niiyama and M. Watanabe},
  title = {BeMgZnSe based ultraviolet lasers},
  journal = {Semicond. Sci. Tech.},
  year = 2005,
}

@article{CTT100672417,
  author = {Y. Niiyama and T. Yokoyama and M. Watanabe},
  title = {Epitaxial growth and optical properties for ultraviolet region of BeMgZnSe on GaP(001) substrate},
  journal = {Phys. Stat. Solid. (b)},
  year = 2004,
}

@article{CTT100672415,
  author = {Y. Niiyama and T. Yokoyama and M. Watanabe},
  title = {Effect of Buffer Layer for Epitaxial Growth of High Magnesium Content BeMgZnSe Lattice Matched to GaP (001) Substrate},
  journal = {Jpn. J. Appl. Phys.},
  year = 2003,
}

@article{CTT100672412,
  author = {T. Maruyama and N. Nakamura and M. Watanabe},
  title = {Crystal Growth of BeZnSe on CaF<sub>2</sub>/Si(111) Subtrate},
  journal = {Jpn. J. Appl. Phys.},
  year = 2002,
}

@article{CTT100672238,
  author = {Y. Niiyama and T. Maruyama and N. Nakamura and M. Watanabe},
  title = {Room Temperature Ultraviolet Photoluminescence of BeZnSe on GaP(001)},
  journal = {Jpn. J. Appl. Phys.},
  year = 2002,
}

@article{CTT100672921,
  author = {Masahiro Watanabe and Tatsuya Ishikawa and Masaki Matsuda and THORU KANAZAWA and MASAHIRO ASADA},
  title = {Room Temperature Negative Differential Resistance of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode grown on Si(100) substrate using Nanoarea Local Epitaxy},
  journal = {44th 2002 Electronic Materials Conference, Z5},
  year = 2002,
}

@article{CTT100672236,
  author = {M. Watanabe and Y. Iketani and M. Asada},
  title = {Epitaxial Growth and Electrical Characteristics of CaF<sub>2</sub>/Si/CaF<sub>2</sub> Resonant Tunneling Diode Structures Grown on Si(111) 1°-off Substrate},
  journal = {Jpn. J. Appl. Phys.},
  year = 2000,
}

@article{CTT100669934,
  author = {M. Watanabe and T. Funayama and T. Teraji and N. Sakamaki},
  title = {CaF<sub>2</sub>/CdF<sub>2</sub> Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio},
  journal = {Jpn. J. Appl. Phys.},
  year = 2000,
}

@article{CTT100669933,
  author = {M. Watanabe and Y. Maeda and S. Okano},
  title = {Epitaxial Growth and Ultraviolet Photoluminescence  of CaF<sub>2</sub>/ZnO/CaF<sub>2</sub> Heterostructures on Si(111)},
  journal = {Jpn. J. Appl. Phys.},
  year = 2000,
}

@article{CTT100669932,
  author = {T. Maruyama and N. Nakamura and M. Watanabe},
  title = {Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in CaF<sub>2</sub> on Si(111) Substrate Prepared by Rapid Thermal Annealling},
  journal = {Jpn. J. Appl. Phys.},
  year = 2000,
}

@article{CTT100669929,
  author = {T. Maruyama and N. Nakamura and M. Watanabe},
  title = {Visible electroluminescence from Nanocrystalline Silicon Embedded in Single-Crystalline CaF<sub>2</sub>/Si(111) with Rapid Thermal Anneal},
  journal = {Jpn. J. Appl. Phys.},
  year = 1999,
}

@article{CTT100669930,
  author = {M. Tsutsui and M. Watanabe and M. Asada},
  title = {Resonant tunneling diodes in Si/CaF<sub>2</sub> heterostructures grown by molecular beam epitaxy},
  journal = {Jpn. J. Appl. Phys.},
  year = 1999,
}

@article{CTT100669927,
  author = {M. Watanabe and Y. Aoki and W. Saitoh and M. Tsuganezawa},
  title = {Negative Differential Resistance of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy},
  journal = {Jpn. J. Appl. Phys.},
  year = 1999,
}

@article{CTT100669928,
  author = {M. Watanabe and T. Maruyama and S. Ikeda},
  title = {Light emission from Si nanocrystals embedded in CaF<sub>2</sub> epilayers on Si(111): effect of rapid thermal annealing},
  journal = {J. Luminescence},
  year = 1999,
}

@article{CTT100669924,
  author = {M. Watanabe and W. Saitoh and Y. Aoki and J. Nishiyama},
  title = {Epitaxial growth of nanometer-thick CaF<sub>2</sub>/CdF<sub>2</sub> heterostructures using partially ionized beam epitaxy},
  journal = {Solid-State Electron.},
  year = 1998,
}

@article{CTT100549021,
  author = {M. Watanabe and T. Matsunuma and T. Matsunuma and T. Maruyama and Y. Maeda},
  title = {Electroluminescence of nanocrystal Si embedded in singel-crystal CaF2/Si},
  journal = {},
  year = 1998,
}

@article{CTT100669925,
  author = {M. Watanabe and T. Matsunuma and T. Maruyama and Y. Maeda},
  title = {Electroluminescence of Nanocrystal Si Embedded in Single-Crystal CaF<sub>2</sub>/Si(111)},
  journal = {Jpn. J. Appl. Phys.},
  year = 1998,
}

@article{CTT100672942,
  author = {MASAHIRO WATANABE and W. Saitoh and K. Mori and H. Sugiura and T. Maruyama and M. Asada},
  title = {Reduction of Electrical Resistance of Nanometer-Thick CoSi<sub>2</sub> Film on CaF<sub>2</sub> by pseudomorphic growth of CaF<sub>2</sub> on Si(111)},
  journal = {Jpn. J. Appl. Phys.},
  year = 1997,
}

@article{CTT100672943,
  author = {MASAHIRO WATANABE and H. Hongo and T. Hattori and Y. Miyamoto and K. Furuya and T. Matsunuma and M. Asada},
  title = {Seventy nm Pitch Patternings on CaF<sub>2</sub> by e-beam Exposure: An Inorganic Resist and a Contamination Resist},
  journal = {Jpn. J. Appl. Phys.},
  year = 1996,
}

@article{CTT100669904,
  author = {M. Watanabe and F. Iizuka and M. Asada},
  title = {Visible Light Emission from Nanocrystalline Silicon Embedded in CaF<sub>2</sub> Layers on Si(111)},
  journal = {IEICE Trans.},
  year = 1996,
}

@article{CTT100672930,
  author = {MASAHIRO WATANABE and Y. Miyamoto, K and T. Maruyama and M. Asada},
  title = {Detection of hot electron current with scanning hot electron microscopy},
  journal = {Appl. Phys. Lett},
  year = 1996,
}

@article{CTT100669916,
  author = {W. Saitoh and K. Yamazaki and M. Asada and M. Watanabe},
  title = {Proposal and Analysis of Very Short Channel Field Effect Transistor Using Vertical Tunneling with New Heterostructures on Silicon},
  journal = {Jpn. J. Appl. Phys.},
  year = 1996,
}

@article{CTT100669903,
  author = {T. Suemasu and W. Saitoh and Y. Kohno and K. Mori and M. Watanabe and M. Asada},
  title = {Transfer efficiency of hot electrons in a metal(CoSi<sub>2</sub>)/ insulator(CaF<sub>2</sub>) quantum interference transistor},
  journal = {Surface science},
  year = 1996,
}

@article{CTT100672944,
  author = {MASAHIRO WATANABE and MASAHIRO ASADA},
  title = {Transfer Efficiency of Hot Electron in a Metal (CoSi<sub>2</sub>)/Insulator(CaF<sub>2</sub>)Quantum Interference Transistor},
  journal = {Surface science},
  year = 1996,
}

@article{CTT100669899,
  author = {T. Suemasu and Y. Kohno and W. Saitoh and M.Watanabe and M. Asada},
  title = {Theoretical and measured characteristics of metal(CoSi<sub>2</sub>)/ Insulator(CaF<sub>2</sub>) resonant tunneling transistors and the influence of parasitic elements},
  journal = {IEEE Trans. Electron Devices},
  year = 1995,
}

@article{CTT100672945,
  author = {MASAHIRO WATANABE and W. Saitoh and T. Suemasu and Y. Kohno and M. Asada},
  title = {Metal(CoSi<sub>2</sub>)/insulator(CaF<sub>2</sub>) hot electron transistor fabricated by electron-beam lithography on a Si substrate},
  journal = {Jpn. J. Appl. Phys},
  year = 1995,
}

@article{CTT100669901,
  author = {MASAHIRO WATANABE and M. Watanabe and F. Iizuka and M. Asada},
  title = {Formation of silicon and cobalt silicide nanoparticles in CaF<sub>2</sub>},
  journal = {Jpn. J. Appl. Phys},
  year = 1995,
}

@article{CTT100669900,
  author = {W. Saitoh and T. Suemasu and Y. Kohno and M. Watanabe and M. Asada},
  title = {Multiple negative differential resistance due to quantum interference of Hot electron waves in metal(CoSi<sub>2</sub>)/insulator(CaF<sub>2</sub>) heterostructures and influence of parasitic elements},
  journal = {Jpn. J. Appl. Phys},
  year = 1995,
}

@article{CTT100672947,
  author = {MASAHIRO WATANABE and T. Suemasu and Y. Kohno and W. Saitoh and N. Suzuki and M. Asada},
  title = {Quantum interference of electron wave in metal(CoSi<sub>2</sub>)/ insulator(CaF<sub>2</sub>) resonant tunneling hot electron transistor structure},
  journal = {Jpn. J. Appl. Phys.},
  year = 1994,
}

@article{CTT100672948,
  author = {MASAHIRO WATANABE and T. Suemasu and Y.Kohno and N.Suzuki and M.Asada},
  title = {Different Characteristics of Metal (CoSi<sub>2</sub>)/ Insulator(CaF<sub>2</sub>) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer},
  journal = {IEICE Trans.},
  year = 1994,
}

@article{CTT100672946,
  author = {MASAHIRO WATANABE and T. Suemasu and J. Suzuki and Y. Kohno and M. Asada and N. Suzuki},
  title = {Metal(CoSi<sub>2</sub>)/Insulator(CaF<sub>2</sub>) Resonant Tunneling Diode},
  journal = {Jpn. J. Appl. Phys.},
  year = 1994,
}

@article{CTT100672951,
  author = {MASAHIRO WATANABE and N. Suzuki and M. Asada},
  title = {Reflection High-Energy Electron Diffraction Oscillation during CaF<sub>2</sub> growth on Si(111) by Partially Ionized-Beam-Epitaxy},
  journal = {Jpn. J. Appl. Phys.},
  year = 1993,
}

@article{CTT100672949,
  author = {MASAHIRO WATANABE and T. Suemasu and S. Muratake and M. Asada},
  title = {Negative Differential Resistance of Metal (CoSi<sub>2</sub>)/Insulator(CaF<sub>2</sub>) Triple-Barrier Resonant Tunneling Diode},
  journal = {Applied Physics Letters},
  year = 1993,
}

@article{CTT100669885,
  author = {T. Suemasu and M. Watanabe and M. Asada and N. Suzuki},
  title = {Room Temperature Negative Differential Resistance of Metal (CoSi<sub>2</sub>)/ Insulator(CaF<sub>2</sub>) Resonant Tunneling Diode},
  journal = {Electron. Lett.},
  year = 1992,
}

@article{CTT100669883,
  author = {S. Muratake and M. Watanabe and T. Suemasu and M. Asada},
  title = {Transistor Action of Metal (CoSi<sub>2</sub>)/ Insulator (CaF<sub>2</sub>) Hot Electron Transistor Structure},
  journal = {Electron. Lett.},
  year = 1992,
}

@article{CTT100669879,
  author = {M. Watanabe and S. Muratake and H. Fujimoto and S. Sakamori and M. Asada and S. Arai},
  title = {Epitaxial Growth of Metal (CoSi<sub>2</sub>)/ Insulator(CaF<sub>2</sub>) Nanometer-Thick Layered Structure on Si(111)},
  journal = {Jpn. J. Appl. Phys.},
  year = 1992,
}

@article{CTT100669881,
  author = {M. Watanabe and S. Muratake and H. Fujimoto and S. Sakamori and M. Asada and S. Arai},
  title = {Epitaxial Growth and Electrical Conductance of Metal (CoSi<sub>2</sub>)/ Insulator (CaF<sub>2</sub>) Nanometer-Thick Layered Structure on Si(111)},
  journal = {J. Electron. Mater.},
  year = 1992,
}

@article{CTT100412494,
  author = {S. Muratake and M. Watanabe and T. Suemasu and M. Asada},
  title = {Transistor Action of Metal(CoSi<sub>2</sub>)/Insulator(CaF<sub>2</sub>)Hot Electron Transistor Structure},
  journal = {Electronics Letters},
  year = 1992,
}

@article{CTT100412495,
  author = {T. Suemasu and M. Watanabe and M. Asada and N. Suzuki},
  title = {Room Temperature Negative Differential Resistance of Metal(CoSi<sub>2</sub>)/Insulator(CaF<sub>2</sub>)Resonant Tunneling Diode},
  journal = {Electronics Letters},
  year = 1992,
}

@article{CTT100672950,
  author = {MASAHIRO WATANABE and MASAHIRO ASADA},
  title = {Epitaxial Growth Meal (CoSi<sub>2</sub>)/Insulator (CaF<sub>2</sub>) Nanometer-Thick Layered Structure on Si (111)},
  journal = {Japanese Journal of Applied Physics},
  year = 1992,
}

@article{CTT100412493,
  author = {M. Watanabe and S. Muratake and H. Fujimoto and S. Sakamori and M. Asada and SHIGEHISA ARAI},
  title = {Epitaxial Growth and Electrical Conductance of Metal(CoSi<sub>2</sub>)/Insulator(CaF<sub>2</sub>)Nanometer-Thick Layered Structure on Si(111)},
  journal = {Jounal of Electronic Materials},
  year = 1992,
}

@article{CTT100669878,
  author = {T. Sakaguchi and M. Watanabe and M. Asada},
  title = {Proposal and Analysis of Quantum-Interference High-Speed Electron Devices Using Metal-Insulator Heterostructure},
  journal = {IEICE Trans. Electron.},
  year = 1991,
}

@article{CTT100669877,
  author = {M. Watanabe and H. Muguruma and M. Asada and S. Arai},
  title = {Low temperature (～420°C) epitaxial growth of CaF<sub>2</sub>/Si(111) by Ionized-Cluster-Beam technique},
  journal = {Jpn. J. Appl. Phys.},
  year = 1990,
}

@inproceedings{CTT100904188,
  author = {星野 麻衣子 and 宇佐見 遼也 and 村上 寛太 and 渡辺正裕},
  title = {Si/CaF<sub>2</sub> 四重障壁共鳴トンネル構造を用いた抵抗変化メモリ素子の室温パルス応答特性},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100904189,
  author = {杉山 裕汰 and 鈴木 飛雄馬 and 范 志遠 and 渡辺 正裕},
  title = {CaF<sub>2</sub>/Si ヘテロ構造を用いた近赤外波長量子カスケードレーザの低電界化に向けた構造提案},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100904191,
  author = {村上 寛太 and 宇佐見 遼也 and 星野 麻衣子 and 渡辺 正裕},
  title = {Si/CaF<sub>2</sub> n型三重障壁共鳴トンネルダイオードの電流密度向上},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100904192,
  author = {宇佐見 遼也 and 星野 麻衣子 and 村上 寛太 and 渡辺 正裕},
  title = {CaF<sub>2</sub>埋め込み構造を用いたp型 Si/CaF<sub>2</sub>二重障壁共鳴トンネルダイオードのバレー電流低減},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100894335,
  author = {星野 麻衣子 and 伊藤 滉悟 and 鈴木 優輔 and 宇佐見 遼也 and 村上 寛太 and 鄭 源宰 and 渡辺 正裕},
  title = {Si/CaF<sub>2</sub> 四重障壁共鳴トンネル構造を用いた抵抗変化メモリ素子の室温スイッチング特性},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100883097,
  author = {伊藤 滉悟 and 鈴木 優輔 and 星野 麻衣子 and 宇佐見 遼也 and 村上 寛太 and 渡辺正裕},
  title = {CaF<sub>2</sub>埋め込み構造によるSi/CaF<sub>2</sub> p型共鳴トンネルダイオード のリーク電流低減},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100883098,
  author = {鈴木 優輔 and 伊藤 滉悟 and 齊藤 雅高 and 星野 麻衣子 and 宇佐見 遼也 and 村上 寛太 and 渡辺 正裕},
  title = {サーファクタントエピタキシー法により形成した Si/CaF<sub>2</sub>二重障壁共鳴トンネルダイオードの室温微分負性抵抗特性},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100883096,
  author = {鄭 源宰 and 劉 龍 and 齊藤 雅高 and 松浦 耕洋 and 杉山 裕汰 and 渡辺 正裕},
  title = {Si/CaF<sub>2</sub>ヘテロ構造を用いた波長1.6 µm帯量子カスケードレーザの理論解析},
  booktitle = {},
  year = 2022,
}

@inproceedings{CTT100883102,
  author = {齊藤雅高 and 鄭 源宰 and 劉 龍 and 小柳 陽平 and 菅原 大暉 and 渡辺 正裕},
  title = {CaF<sub>2</sub>上に成膜したSi薄膜の表面平坦性に対するAs照射効果},
  booktitle = {第69回応用物理学会春季学術講演会 講演予稿集 (青山学院大学 相模原キャンパス ＆ オンライン)},
  year = 2022,
}

@inproceedings{CTT100883101,
  author = {菅原 大暉 and 劉 龍 and 鄭 源宰 and 小柳 陽平 and 北村 研太 and 渡辺 正裕},
  title = {p型単一障壁トンネルダイオード及び2重障壁共鳴トンネルダイオードを用いたSi/CaF<sub>2</sub>界面における価電子帯障壁高さ(∆Ev)の評価},
  booktitle = {第69回応用物理学会春季学術講演会 講演予稿集 (青山学院大学 相模原キャンパス ＆ オンライン)},
  year = 2022,
}

@inproceedings{CTT100865754,
  author = {北村 研太 and 鄭 源宰 and 劉 龍 and 小柳 陽平 and 菅原 大暉 and 渡辺 正裕},
  title = {Si/CaF2ヘテロ構造を用いた分布帰還型導波路の設計とグレーティング構造形成プロセス},
  booktitle = {第82回応用物理学会秋季学術講演会 講演予稿集 (2021 ハイブリッド開催（名城大学 天白キャンパス ＆ オンライン）)},
  year = 2022,
}

@inproceedings{CTT100865457,
  author = {Masahiro Watanabe},
  title = {TCAD simulation of trench-gate IGBTs for  prediction of carrier lifetime requirements for future scaled devices},
  booktitle = {Proceedings of the 2021 IEEE 14th International Conference on ASIC (ASICON 2021)},
  year = 2021,
}

@inproceedings{CTT100865755,
  author = {Gensai Tei and Kenta Kitamura and Long Liu and Yohei Koyanagi and Daiki Sugawara and MASAHIRO WATANABE},
  title = {Proposal and Analysis of Si/CaF2 Distributed Feedback Waveguide for near- and mid- infrared applications},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100865753,
  author = {菅原 大暉 and 劉 龍 and 鄭 源宰 and 小柳 陽平 and 北村 研太 and 渡辺 正裕},
  title = {単一障壁p型トンネルダイオードを用いたSi/CaF<sub>2</sub>界面における価電子帯障壁高さ(ΔEv)の評価},
  booktitle = {第82回応用物理学会秋季学術講演会 講演予稿集 (2021 ハイブリッド開催（名城大学 天白キャンパス ＆ オンライン）)},
  year = 2021,
}

@inproceedings{CTT100861332,
  author = {Masahiro Watanabe and Naoyuki Shigyo and Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Katsumi Satoh and Tomoko Matsudai and Takuya Saraya and Iriya Muneta and Hitoshi Wakabayashi and Akira Nakajima and Shin-ichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
  title = {Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices},
  booktitle = {Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)},
  year = 2021,
}

@inproceedings{CTT100865752,
  author = {佐藤穂波 and 熊谷佳郎 and 冨澤勘太 and 金子拓海 and 渡辺正裕},
  title = {Si/CaF2 p型三重障壁共鳴トンネルダイオードの室温微分負性抵抗特性},
  booktitle = {第68回応用物理学会春季学術講演会 講演予稿集 (2021 オンライン開催)},
  year = 2021,
}

@inproceedings{CTT100833055,
  author = {小柳陽平 and 鄭 源宰 and 劉 龍 and 渡辺正裕},
  title = {CaF<sub>2</sub>/Siヘテロ構造を用いた近赤外波長量子カスケードレーザの理論解析},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100833056,
  author = {Gensai Tei and Liu Long and Yohei Koyanagi and Masahiro Watanabe},
  title = {Room Temperature Near Infrared Electroluminescence of Si/CaF<sub>2</sub> Quantum Cascade Laser Structures grown on SOI Substrate},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100833054,
  author = {金子 拓海 and 熊谷 佳郎 and 廣瀬 皓大 and 利根川啓希 and 三上 萌 and 冨澤 勘太 and 佐藤穂波 and 渡辺正裕},
  title = {CaF<sub>2</sub>/Si/CaF<sub>2</sub>共鳴トンネル量子井戸構造を用いた抵抗スイッチング特性の理論解析},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100833053,
  author = {佐藤 穂波 and 熊谷 佳郎 and 三上 萌 and 利根川 啓希 and 廣瀬 皓大 and 冨澤 勘太 and 金子 拓海 and 渡辺 正裕},
  title = {Si/CaF<sub>2</sub> p型三重障壁共鳴トンネルダイオードの室温微分負性抵抗特性},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100833081,
  author = {渡辺正裕 and 執行直之 and 星井拓也 and 古川和由 and 角嶋邦之 and 佐藤克己 and 末代知子 and 更屋拓哉 and 高倉俊彦 and 伊藤一夫 and 福井宗利 and 鈴木慎一 and 竹内 潔 and 宗田伊里也 and 若林 整 and 中島 昭 and 西澤伸一 and 筒井一生 and 平本俊郎 and 大橋弘通 and 岩井洋},
  title = {トレンチゲート型Si-IGBTの3次元精密TCADシミュレーション},
  booktitle = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
  year = 2019,
}

@inproceedings{CTT100833064,
  author = {Yoshiro Kumagai and Satoshi Fukuyama and Hiroki Tonegawa and Kizashi Mikami and Kodai Hirose and Kanta Tomizawa and Keisuke Ichikawa and Masahiro Watanabe},
  title = {Negative Differential Resistance in CaF<sub>2</sub>/Si Double Barrier Resonant Tunneling Diodes via Plasma Etching Mesa Isolation process},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813981,
  author = {T. Hiramoto and T. Saraya and K. Itou and T. Takakura and M. Fukui and S. Suzuki and K. Takeuchi and M. Tsukuda and Y. Numasawa and K. Satoh and T. Matsudai and W. Saito and K. Kakushima and T. Hoshii and K. Furukawa and M. Watanabe and N. Shigyo and H. Wakabayashi and K. Tsutsui and H. Iwai and A. Ogura and S. Nishizawa and I. Omura and H. Ohash},
  title = {Switching of 3300V Scaled IGBT by 5V Gate Drive},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100833049,
  author = {冨澤 勘太 and 熊谷 佳郎 and 利根川 啓希 and 三上 萌 and 廣瀬 皓大 and 金子 拓海 and 佐藤 穂波 and 渡辺 正裕},
  title = {CaF<sub>2</sub>/Si/SiO<sub>2</sub>二重障壁共鳴トンネルダイオードの室温微分負性抵抗特性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100833048,
  author = {利根川 啓希 and 熊谷 佳郎 and 三上 萌 and 廣瀬 皓大 and 冨澤 勘太 and 金子 拓海 and 佐藤 穂波 and 渡辺 正裕},
  title = {Si/CaF<sub>2</sub>三重障壁共鳴トンネルダイオードの高ピーク電流密度を有する室温微分負性抵抗特性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100833074,
  author = {Long Liu and Soichiro Ono and Gensai Tei and Masahiro Watanabe},
  title = {Design, fabrication, and evaluation of waveguide structure for Si/CaF<sub>2</sub> quantum-well intersubband transition lasers},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100833052,
  author = {鄭 源宰 and 劉 龍 and 小柳 陽平 and 渡辺 正裕},
  title = {CaF<sub>2</sub>/Siヘテロ構造を用いた近赤外波長量子カスケードレーザの作製プロセス},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100833051,
  author = {廣瀬 皓大 and 熊谷 佳郎 and 利根川 啓希 and 冨澤 勘太 and 金子 拓海 and 佐藤 穂波 and 渡辺 正裕},
  title = {Si/CaF<sub>2</sub>バイポーラ二重障壁共鳴トンネルダイオードの室温微分負性抵抗特性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100833050,
  author = {三上 萌 and 熊谷 佳郎 and 廣瀬 皓大 and 冨澤 勘太 and 利根川 啓希 and 金子 拓海 and 佐藤 穂波 and 渡辺 正裕},
  title = {原子層薄膜CaF<sub>2</sub>/Siヘテロ構造を用いたホール駆動共鳴トンネルダイオードの室温微分負性抵抗特性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100811298,
  author = {更屋 拓哉 and 伊藤 一夫 and 高倉 俊彦 and 福井 宗利 and 鈴木 慎一 and 竹内 潔 and 附田 正則 and 沼沢 陽一郎 and 佐藤 克己 and 末代 知子 and 齋藤 渉 and 角嶋邦之 and 星井 拓也 and 古川 和由 and 渡辺正裕 and 執行 直之 and 筒井一生 and 岩井洋 and 小椋 厚志 and 西澤 伸一 and 大村 一郎 and 大橋 弘通 and 平本 俊郎},
  title = {5Vゲート駆動1200V級スケーリングIGBTの動作実証とスイッチング損失の低減 (シリコン材料・デバイス)},
  booktitle = {電子情報通信学会技術研究報告 = IEICE technical report : 信学技報},
  year = 2019,
}

@inproceedings{CTT100813973,
  author = {Takuya Saraya and Kazuo Itou and Toshihiko Takakura and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Masanori Tsukuda and Yohichiroh Numasawa and Katsumi Satoh and Tomoko Matsudai and Wataru Saito and Kuniyuki Kakushima and Takuya Hoshii and Kazuyoshi Furukawa and Masahiro Watanabe and Naoyuki Shigyo and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Atsushi Ogura and Shin-Ichi Nishizawa and Ichiro Omura and Hiromichi Ohashi and Toshiro Hiramo},
  title = {3300V Scaled IGBTs Driven by 5V Gate Voltag},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813972,
  author = {Masahiro Watanabe and Naoyuki Shigyo and Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Katsumi Satoh and Tomoko Matsudai and Takuya Saraya and Toshihiro Takakura and Kazuo Itou and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Iriya Muneta and Hitoshi Wakabayashi and Akira Nakajima and Shin-ichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
  title = {Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100833043,
  author = {三上 萌 and 福山 聡史 and 渡辺 正裕},
  title = {原子層薄膜CaF<sub>2</sub>/Siヘテロ構造を用いたp 型共鳴トンネルダイオードの室温微分負性抵抗特性},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100833042,
  author = {鄭 源宰 and 大野 綜一郎 and 劉 龍 and 渡辺 正裕},
  title = {CaF<sub>2</sub>/Siヘテロ構造を用いた近赤外波長量子カスケードレーザの理論解析},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100833047,
  author = {市川研佑 and 利根川啓希 and 廣瀬皓大 and 三上萌 and 福山聡史 and 熊谷佳郎 and 渡辺正裕},
  title = {金属をエミッタとするシリコン／フッ化物多重障壁共鳴トンネルダイオードの理論解析},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100813969,
  author = {T. Saraya and K. Itou and T. Takakura and M. Fukui and S. Suzuki and K. Takeuchi and M. Tsukuda and Y. Numasawa and K. Satoh and T. Matsudai and W. Saito and K. Kakushima and T. Hoshii and K. Furukawa and M. Watanabe and N. Shigyo and K. Tsutsui and H. Iwai and A. Ogura and S. Nishizawa and I. Omura and H. Ohashi and T. Hiramoto},
  title = {Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813965,
  author = {Takuya Hoshii and Kazuyoshi Furukawa and Kuniyuki Kakushima and Masahiro Watanabe and Naoyuki Shigyo and Takuya Saraya and Toshihiko Takakura and Kazuo Itou and Munetoshi Fukui and Shinichi Suzuki and Kiyoshi Takeuchi and Iriya Muneta and Hitoshi Wakabayashi and Sinichi Nishizawa and Kazuo Tsutsui and Toshiro Hiramoto and Hiromichi Ohashi and Hiroshi Iwai},
  title = {Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100773666,
  author = {廣瀬皓大 and 福山聡史 and 熊谷佳郎 and 利根川啓希 and 渡辺正裕},
  title = {Si/CaF<sub>2</sub>二重障壁共鳴トンネルダイオードの室温微分負性抵抗特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100773665,
  author = {福山聡史 and 渡辺正裕},
  title = {原子層薄膜CaF<sub>2</sub>/Siヘテロ構造を用いた単一障壁トンネルダイオードの電流電圧特性評価},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100773660,
  author = {熊谷佳郎 and 大野綜一郎 and 廣瀬皓大 and 福山聡史 and 利根川啓希 and 渡辺正裕},
  title = {ドライエッチングプロセスによるCaF<sub>2</sub>/Si/CaF<sub>2</sub>共鳴トンネル構造の室温微分負性抵抗特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100773642,
  author = {Hiroki Tonegawa and Yoshiro Kumagai and Satoshi Fukuyama and Koudai Hirose and MASAHIRO WATANABE},
  title = {Room Temperature High Peak-to-valley Current Ratio of CaF2/Si Triple-barrier Resonant-tunneling Diode Grown on Si},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100813959,
  author = {K. Kakushima and T. Hoshii and M. Watanabe and N. Shigyo and K. Furukawa and T. Saraya and T. Takakura and K. Itou and M. Fukui and S. Suzuki and K. Takeuchi and I. Muneta and H. Wakabayashi and Y. Numasawa and A. Ogura and S. Nishizawa and K. Tsutsui and T. Hiramoto and H. Ohashi and H. Iwai},
  title = {New methodology for evaluating minority carrier lifetime for process assessment},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100773658,
  author = {利根川啓希 and 渡辺正裕},
  title = {Si/CaF<sub>2</sub>三重障壁共鳴トンネルダイオードの室温微分負性抵抗特性},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100773657,
  author = {福山聡史 and 渡辺正裕},
  title = {原子層薄膜CaF<sub>2</sub>/Siヘテロ界面の価電子帯バンド不連続評価},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100773654,
  author = {大野綜一郎 and 劉 龍 and 齋藤侑祐 and 近藤弘規 and 渡辺正裕},
  title = {Si/CaF2量子井戸サブバンド間遷移レーザの近赤外波長活性層設計},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100773650,
  author = {齋藤侑祐 and 近藤弘規 and 渡辺正裕},
  title = {CaF2/Si量子カスケード構造からの室温電流注入発光},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100773646,
  author = {熊⾕佳郎 and 渡辺正裕},
  title = {CF4/O2混合ガスプラズマを⽤いたCaF2単結晶およびCaF2/Siヘテロ構造の反応性イオンエッチング},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100773645,
  author = {近藤弘規 and 齋藤侑祐 and 渡辺正裕},
  title = {Si/CaF2量⼦カスケードレーザの導波路構造作製と評価},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747152,
  author = {齋藤侑祐 and 田辺直之 and 近藤弘規 and 渡辺正裕},
  title = {薄膜物性値補正を考慮した Si/CaF2量子カスケードレーザの活性層設計},
  booktitle = {第 64 回応用物理学会春季学術講演会 講演予稿集},
  year = 2017,
}

@inproceedings{CTT100747154,
  author = {近藤弘規 and 齋藤侑祐 and 田辺直之 and 渡辺正裕},
  title = {Si/CaF2量子カスケードレーザの導波路構造設計},
  booktitle = {第 64 回応用物理学会春季学術講演会 講演予稿集},
  year = 2017,
}

@inproceedings{CTT100712060,
  author = {櫻井文裕 and 渡辺正裕},
  title = {CoSi<sub>2</sub>上に形成したSi/CaF<sub>2</sub>共鳴トンネル量子井戸構造の室温抵抗スイッチング特性},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100712064,
  author = {田辺直之 and 島中智史 and 須田慶太 and 渡辺正裕},
  title = {CaF<sub>2</sub>/Si/CaF<sub>2</sub>共鳴トンネルダイオードの室温微分負性抵抗特性},
  booktitle = {信学技報, vol.116, No. 158, ED2016-34},
  year = 2016,
}

@inproceedings{CTT100712059,
  author = {田辺 直之 and 望月 雅人 and 須田 慶太 and 島中 智史 and 渡辺 正裕},
  title = {CaF<sub>2</sub>/Si/CaF<sub>2</sub>共鳴トンネル構造の室温微分性抵抗特性},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100712058,
  author = {望月雅人 and 須田慶太 and 渡辺正裕},
  title = {CaF<sub>2</sub>/Si量子井戸へテロ構造からのEL発光特性},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100712057,
  author = {桑田友哉 and 須田慶太 and 渡辺正裕},
  title = {Si/CaF<sub>2</sub>共鳴トンネル構造を用いた抵抗スイッチング素子のパルス応答特性},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100712056,
  author = {須田慶太 and 桑田友哉 and 渡辺正裕},
  title = {CaF<sub>2</sub>/CdF<sub>2</sub> /CaF<sub>2</sub>共鳴トンネル量子井戸構造を用いた抵抗スイッチング特性の理論解析},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100712055,
  author = {望月雅人 and 金子大志 and 須田慶太 and 渡辺正裕},
  title = {Si/CaF<sub>2</sub>/CdF<sub>2</sub>サブバンド間遷移レーザ構造におけるCdF<sub>2</sub>高速引き抜き層の導入とEL増大効果},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100712020,
  author = {須田慶太 and 桑田友哉 and 渡辺正裕},
  title = {Si/CaF<sub>2</sub>/CdF<sub>2</sub> RTD構造における電流電圧特性の理論解析},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672547,
  author = {越田悠太 and 須田慶太 and 桑田友哉 and 傳田純也 and 渡辺正裕},
  title = {Si/CaF<sub>2</sub>共鳴トンネル量子井戸構造の高ピーク電流密度抵抗スイッチング特性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672543,
  author = {桑田友哉 and 須田慶太 and 傳田純也 and 越田悠太 and 渡辺正裕},
  title = {Si/CaF<sub>2</sub>共鳴トンネル構造を用いた抵抗スイッチング素子のパルス応答特性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672545,
  author = {須田慶太 and 傳田純也 and 桑田友哉 and 越田悠太 and 渡辺正裕},
  title = {Al/CaF<sub>2</sub>/Si MIS 構造のトンネル電流評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100669876,
  author = {J. Denda and K. Suda and Y. Kuwata and M. Watanabe},
  title = {Pulsed operation of resistance switching memory of Si/CaF<sub>2</sub>/CdF<sub>2</sub> resonant-tunneling quantum-well structures},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100668518,
  author = {小池進 and 渡辺正裕},
  title = {CaF<sub>2</sub>/Si 量子ドット超格子を用いたp-i-n セル構造の光電変換特性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100668516,
  author = {越田悠太 and 須田慶太 and 桑田友哉 and 傳田純也 and 小池進 and 瀬川美奈人 and 渡辺正裕},
  title = {ナノクリスタルシリコン/CaF<sub>2</sub> 共鳴トンネルダイオードの微分負性抵抗特性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100668503,
  author = {傳田純也 and 須田慶太 and 桑田友哉 and 渡辺正裕},
  title = {Si/CaF<sub>2</sub>/CdF<sub>2</sub> 共鳴トンネル量子井戸構造のパルス応答特性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100668502,
  author = {須田慶太 and 傳田純也 and 桑田友哉 and 渡辺正裕},
  title = {Si/CaF<sub>2</sub>/CdF<sub>2</sub> 量子井戸構造を用いた抵抗スイッチング素子の理論解析},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100669875,
  author = {M. Segawa and T. Ohci and Y. Koshita and K. Suda and M. Watanabe},
  title = {Near Infrared (λ～1.5μm) Room Temperature Electroluminescence from Si/CaF<sub>2</sub> Intersubband Transition Laser Structures Grown on Silicon-on-Insulator Substrate},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100668498,
  author = {桑田友哉 and 瓜生和也 and 傳田純也 and 須田慶太 and 渡辺正裕},
  title = {Si/CaF<sub>2</sub>共鳴トンネル構造を用いた抵抗スイッチング素子の作製},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100668497,
  author = {瀬川美奈人 and 越智達也 and 越田悠太 and 渡辺正裕},
  title = {Si/CaF<sub>2</sub>サブバンド間遷移レーザ構造からの室温近赤外(λ～1.5μm)EL発光},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100668501,
  author = {傳田純也 and 瓜生和也 and 須田慶太 and 渡辺正裕},
  title = {Si/CaF<sub>2</sub>/CdF<sub>2</sub>共鳴トンネル量子井戸構造の抵抗スイッチング特性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100668500,
  author = {渡辺正裕},
  title = {CoSi<sub>2</sub>上CaF<sub>2</sub>/CdF<sub>2</sub>/Si量子井戸構造を用いたクロスポイント型抵抗スイッチング素子の保持特性評価},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100668494,
  author = {倉地祐輝 and 渡辺正裕},
  title = {CaF<sub>2</sub>/Si 量子ドット構造におけるημτ積の分光感度特性},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100668493,
  author = {越智達也 and 渡辺正裕},
  title = {Si/CaF<sub>2</sub> 量子カスケードレーザ構造からの室温近赤外EL発光},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100669873,
  author = {J. Denda and K. Uryu and M. Watanabe},
  title = {Resistance switching memory characteristics of Si/CaF<sub>2</sub>/CdF<sub>2</sub> quantum-well structures grown on metal (CoSi<sub>2</sub>) Layer},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100668496,
  author = {傳田純也 and 瓜生和也 and 渡辺正裕},
  title = {金属CoSi<sub>2</sub>上に形成したSi/CaF<sub>2</sub>/CdF<sub>2</sub>共鳴トンネル量子井戸構造の抵抗スイッチング特性},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100668492,
  author = {瓜生和也 and 傳田純也 and 渡辺正裕},
  title = {CoSi<sub>2</sub>上CaF<sub>2</sub>/CdF<sub>2</sub>/Siヘテロ接合量子井戸構造を用いたクロスポイント型抵抗スイッチング素子の作製},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100669872,
  author = {Masahiro Watanabe and Kazuya Uryu},
  title = {Retention characteristics of resistance switching memory using Si/CaF<sub>2</sub>/CdF<sub>2</sub> quantum-well structures},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100668491,
  author = {瓜生和也 and 渡辺 正裕},
  title = {CaF<sub>2</sub>/CdF<sub>2</sub>/Si ヘテロ接合量子井戸構造を用いた抵抗スイッチング素子の保持特性評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100672566,
  author = {渡辺正裕},
  title = {CaF<sub>2</sub>/Si 量子ドット超格子を用いたp-i-n セル構造の作製},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100668357,
  author = {仲正路友康 and 瓜生和也 and 渡辺正裕},
  title = {CoSi<sub>2</sub> 上弗化物共鳴トンネル構造を用いた抵抗スイッチング素子の作製と特性評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100669870,
  author = {M. Watanabe and H. Oogi},
  title = {Fabrication of p-i-n structure using epitaxial silicon/CaF<sub>2</sub> quantum-dot superlattice},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100669871,
  author = {Masahiro Watanabe and Yuhkou Nakashouji and Kazuya Tsuchiya},
  title = {Switching voltage reduction of resistance switching memory using Si/CaF<sub>2</sub>/CdF<sub>2</sub> quantum-well structures},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100668356,
  author = {仲正路友康 and 土屋和哉 and 渡辺正裕},
  title = {シリコン／弗化物共鳴トンネル構造を用いた抵抗スイッチング素子の低電圧化},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100668355,
  author = {大木洋 and 渡辺正裕},
  title = {エピタキシャルCaF<sub>2</sub>/Si量子ドット構造の光電流測定},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100669868,
  author = {M. Watanabe and R. Hirasawa and Y. Nakashouji},
  title = {Resistance switching memory using Si/CaF<sub>2</sub>/CdF<sub>2</sub> quantum-well structures},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100668353,
  author = {平澤亮 and 仲正路友康 and 渡辺正裕},
  title = {シリコン／弗化物共鳴トンネル構造を用いた抵抗スイッチング素子の特性評価},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100669869,
  author = {M. Watanabe and H. Oogi},
  title = {Enhancement of Multiexciton Generation using Epitaxial Silicon/Fluoride Quantum-dot Structures},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100668354,
  author = {大木洋 and 渡辺正裕},
  title = {エピタキシャルCaF<sub>2</sub>/Si量子ドット構造の光学特性評価},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100668352,
  author = {梶浦俊祐 and 芦川典士 and 渡辺正裕},
  title = {Si/CaF<sub>2</sub>量子へテロ構造の近赤外EL発光},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100669865,
  author = {M. Watanabe and T. Wada},
  title = {Fabrication and Characterization of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Floating Gate Metal-oxide-semiconductor Field Effect Transistor Structures},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100669866,
  author = {Shunsuke Kajiura and Masahiro Watanabe},
  title = {Proposal and analysis of quantum cascade lasers using Si/CaF<sub>2</sub>/CdF<sub>2</sub> hybrid quantum well structures},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100669867,
  author = {Ryo Hirasawa and Masahiro Watanabe},
  title = {Novel Resistivity Random Access Memory (ReRAM) based on tunneling probability modulation using Si/CaF<sub>2</sub>/CdF<sub>2</sub> quantum-well structures},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100668351,
  author = {和田宇史 and 鈴木雄介 and 平澤亮 and 渡辺正裕},
  title = {CdF<sub>2</sub>/CaF<sub>2</sub>共鳴トンネルゲート構造を用いた3端子集積デバイスの作製と評価},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100669864,
  author = {M. Watanabe and T. Kanazawa and M. Asada},
  title = {Transmission Electron Microscopy Analysis of CaF<sub>2</sub>/CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode Structures grown on Si(100) Substrate},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100668350,
  author = {藤久雄己 and 粂井正也 and 梶浦俊祐 and 佐々木雄祐 and 渡辺正裕 and 浅田雅洋},
  title = {Si基板上CdF<sub>2</sub>/CaF<sub>2</sub>サブバンド間遷移レーザに向けたナノエリア微小孔によるリーク電流低減},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100669863,
  author = {H. Sano and K. Jinen and S. Kodaira and K. Uchida and M. Kumei and Y. Fujihisa and M. Watanabe and M. Asada},
  title = {Mid-infrared (～4μm) Electroluminescence from CdF<sub>2</sub>/CaF<sub>2</sub> Intersubband transition structures grown on Si(111) substrate},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100668025,
  author = {佐野洋 and 自念圭輔 and 内田薫 and 小平新志 and 粂井正也 and 藤久雄己 and 渡辺正裕 and 浅田雅洋},
  title = {Si(111)基板上CdF<sub>2</sub>/CaF<sub>2</sub>量子へテロ構造からの中赤外(～4μm) EL発光},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100669862,
  author = {T. Kanazawa and R. Fujii and T. Wada and Y. Suzuki and M. Watanabe and M. Asada},
  title = {Control of NDR Characteristics of CdF<sub>2</sub>/CaF<sub>2</sub> RTDs Using Nano-Area Local Growth on Si(100) Substrates},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100669861,
  author = {K. Jinen and T. Kikuchi and M. Watanabe and M. Asada},
  title = {Near-infrared Electroluminescence from Multilayered CdF<sub>2</sub>/CaF<sub>2</sub> Quantum Heterostructure Grown on Trench-Patterned Si(111) Substrate},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100668021,
  author = {内田薫 and 自念圭輔 and 小平新志 and 粂井正也 and 佐野洋 and 渡辺正裕 and 浅田雅洋},
  title = {弗化物系サブバンド間遷移レーザのためのSOI構造プラズモン導波路の作製},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100667986,
  author = {金澤 徹 and 藤井 諒 and 和田 宇史 and 鈴木 雄介 and 渡辺 正裕 and 浅田 雅洋},
  title = {Si (100)基板上CdF<sub>2</sub>/CaF<sub>2</sub>ナノ領域成長共鳴トンネルダイオードのI-V特性制御},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100667985,
  author = {自念圭輔 and 内田薫 and 小平新志 and 粂井正也 and 佐野洋 and 渡辺正裕 and 浅田雅洋},
  title = {(CdF<sub>2</sub>/CaF<sub>2</sub>)量子構造におけるサブバンド間遷移時間の理論解析},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100668024,
  author = {小平新志 and 自念圭輔 and 内田薫 and 粂井正也 and 佐野洋 and 渡辺正裕 and 浅田雅洋},
  title = {Si基板上フッ化物系サブバンド間遷移レーザに向けた基板表面制御},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100669838,
  author = {T. Kanazawa and A. Morosawa and M. Watanabe and M. Asada},
  title = {High peak-to-valley current ratio of CdF<sub>2</sub>/CaF<sub>2</sub> resonant tunneling diode grown on Si(100) substrates},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100667981,
  author = {金澤徹 and 諸澤篤志 and 藤井諒 and 和田宇史 and 渡辺正裕 and 浅田雅洋},
  title = {Si(100)基板上CaF<sub>2</sub>/CdF<sub>2</sub>/CaF<sub>2</sub>量子井戸構造の成長温度依存性},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100667982,
  author = {自念圭輔 and 菊池毅 and 渡辺正裕 and 浅田雅洋},
  title = {Si基板上(CdF<sub>2</sub>/CaF<sub>2</sub>)量子ヘテロ構造のEL発光特性},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100667983,
  author = {諸澤篤志 and 金澤徹 and 藤井諒 and 和田宇史 and 渡辺正裕 and 浅田雅洋},
  title = {ナノ領域成長によるSi(100)基板上CdF<sub>2</sub>/CaF<sub>2</sub>共鳴トンネルダイオードの微分負性抵抗特性},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100667984,
  author = {菊池毅 and 自念圭輔 and 内田薫 and 小平新志 and 渡辺正裕 and 浅田雅洋},
  title = {プラズモン導波路を用いた弗化物系サブバンド間遷移レーザの理論解析},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100669859,
  author = {K. Jinen and T. Kikuchi and M. Watanabe and M. Asada},
  title = {Room temperature electroluminescence of CdF<sub>2</sub>/CaF<sub>2</sub> intersubband transition laser structures grown on Si substrate},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100669860,
  author = {Y. Niiyama and T. Murata and M. Watanabe},
  title = {Optically pumped ultraviolet lasing of BeMgZnSe based quantum well laser structures},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100667980,
  author = {新山勇樹 and 村田奉之 and 渡辺正裕},
  title = {BeMgZnSe系化合物を用いた光励起による紫外線レーザ発振(λ=373nm)},
  booktitle = {},
  year = 2005,
}

@inproceedings{CTT100667979,
  author = {渡辺正裕 and 新山勇樹 and 村田奉之},
  title = {分光エリプソメトリを用いたBeMgZnSeの屈折率測定},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100667975,
  author = {渡辺正裕 and 金澤徹 and 浅田雅弘},
  title = {Si(100)基板上CdF<sub>2</sub>/CaF<sub>2</sub>共鳴トンネルダイオード構造の成長温度依存性},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100667976,
  author = {自念圭輔 and 村田博 and 渡辺正裕 and 浅田雅洋},
  title = {Si基板上(CdF<sub>2</sub>/CaF<sub>2</sub>)量子へテロ構造の近赤外EL発光},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100667977,
  author = {村田奉之 and 新山勇樹 and 渡辺正裕},
  title = {BeMgZnSeにおける室温最短波PL発光(λ=329nm)},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100669799,
  author = {M. Watanabe and T. Kanazawa and K. Jinen and M. Asada},
  title = {Negative Differential Resistance of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode Grown on Si(100) Substrate},
  booktitle = {2004 Silicon Nanoelectronics Workshop,9-20},
  year = 2004,
}

@inproceedings{CTT100667970,
  author = {田村信平 and 渡辺正裕 and 浅田雅洋},
  title = {ナノ領域エピタキシー法によるCoSi<sub>2</sub>/CaF<sub>2</sub>三重障壁共鳴トンネルダイオードの室温微分負性抵抗特性},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100667974,
  author = {横山毅 and 新山勇樹 and 村田奉之 and 渡辺正裕},
  title = {MEEバッファ層上にMBE成長したBeZnSe膜の発光特性の向上},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100667972,
  author = {村田奉之 and 新山勇樹 and 横山毅 and 渡辺正裕},
  title = {Be-Zn同時照射を用いたBeZnSe系ひずみ量子井戸構造の結晶成長と光学特性},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100667973,
  author = {新山勇樹 and 横山毅 and 村田奉之 and 渡辺正裕},
  title = {BeMgZnSe系化合物を用いた光励起用導波路構造の設計と作製},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100667971,
  author = {自念圭輔 and 村田博 and 渡辺正裕 and 浅田雅洋},
  title = {CoSi<sub>2</sub>-プラズモン導波路を用いた弗化物系サブバンド間遷移レーザの理論解析},
  booktitle = {},
  year = 2004,
}

@inproceedings{CTT100669707,
  author = {Y. Niiyama and T. Yokoyama and M. Watanabe},
  title = {Epitaxial growth and optical properties for ultraviolet region of BeMgZnSe on GaP(001) substrate},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100667969,
  author = {新山勇樹 and 横山毅 and 村田奉之 and 丸山武男 and 渡辺正裕},
  title = {BeMgZnSe 系紫外線量子井戸レーザの理論解析 – クラッド層Mg 含有量依存性 –},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100667968,
  author = {新山勇樹 and 横山毅 and 村田奉之 and 渡辺正裕},
  title = {BeMgZnSe 混晶のPL 発光エネルギーの温度依存性},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100667965,
  author = {金澤 徹 and 松田 克己 and 渡辺 正裕 and 浅田 雅洋},
  title = {Si (100)基板上CdF<sub>2</sub>/CaF<sub>2</sub> 共鳴トンネルダイオードの微分負性抵抗特性の構造依存性},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100669705,
  author = {M. Watanabe and M. Matsuda and H. Fujioka and T. Kanazawa and M. Asada},
  title = {Memory Effect of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode grown on p-type Silicon Substrate},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100669704,
  author = {M. Watanabe and M. Matsuda and H. Fujioka and T. Kanazawa and M. Asada},
  title = {Structure Dependence of Negative Differential Resistance Characteristics of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode grown by Local Epitaxy on Silicon},
  booktitle = {2003 Silicon Nanoelectronics Workshop, 8-07},
  year = 2003,
}

@inproceedings{CTT100669706,
  author = {Y. Niiyama and T. Yokoyama and M. Watanabe},
  title = {Crystal Growth of High-Mg-Content BeMgZnSe Lattice Matched to GaP(001) Substrate Using BeZnSe Buffer Layer},
  booktitle = {First Asia-Pacific Workshop on Widegap Semiconductors, P118},
  year = 2003,
}

@inproceedings{CTT100667959,
  author = {松田克己 and 金澤徹 and 渡辺正裕 and 浅田雅洋},
  title = {CdF<sub>2</sub>/CaF<sub>2</sub> 共鳴トンネルダイオードの電荷蓄積による特性変化},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100667961,
  author = {金澤徹 and 松田克己 and 渡辺正裕 and 浅田雅洋},
  title = {ダブルステップ化Si(100) 2°off基板上CdF<sub>2</sub>/CaF<sub>2</sub> 共鳴トンネルダイオードの作製と評価},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100667962,
  author = {自念圭輔 and 渡辺正裕 and 浅田雅洋},
  title = {SOI 基板上弗化物系超ヘテロ構造を用いたサブバンド間遷移レーザの解析},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100667916,
  author = {松田克己 and 金澤徹 and 渡辺正裕 and 浅田雅洋},
  title = {CdF<sub>2</sub>/CaF<sub>2</sub>共鳴トンネルダイオード微分負性抵抗特性の量子井戸厚依存性},
  booktitle = {},
  year = 2002,
}

@inproceedings{CTT100669701,
  author = {M. Watanabe and T. Ishikawa and M. Matsuda and T. Kanazawa and M. Asada},
  title = {Systematic variation of negative differential resistance characteristics of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode on Si(111) grown by Nanoarea Local Epitaxy},
  booktitle = {The Second International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '02 (QNN '02), Tu4-3},
  year = 2002,
}

@inproceedings{CTT100667958,
  author = {新山勇樹 and 丸山武男 and 渡辺正裕},
  title = {GaP(001)基板上BeMgZnSe-BeZnSe DH構造における紫外線PL発光},
  booktitle = {},
  year = 2002,
}

@inproceedings{CTT100669700,
  author = {M. Watanabe and T. Ishikawa and M. Matsuda and T. Kanazawa and M. Asada},
  title = {Room Temperature Negative Differential Resistance of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode grown on Si using Nanoarea Local Epitaxy},
  booktitle = {26th International Conference on the Physics of Semiconductors, P157},
  year = 2002,
}

@inproceedings{CTT100667915,
  author = {藤岡裕智 and 筒井将史 and 石川達也 and 渡辺正裕 and 浅田雅洋},
  title = {縦型MOSFETとRTDによる微細素子の作成},
  booktitle = {},
  year = 2002,
}

@inproceedings{CTT100667914,
  author = {金澤徹 and 松田克己 and 石川達也 and 金澤徹 and 渡辺正裕 and 浅田雅洋},
  title = {Si(100)基板上CdF<sub>2</sub>/CaF<sub>2</sub>共鳴トンネルダイオードの作製と評価},
  booktitle = {},
  year = 2002,
}

@inproceedings{CTT100667913,
  author = {中村尚人 and 丸山武男 and 新山勇樹 and 渡辺正裕},
  title = {GaP(001)基板上へのBeMgZnSeエピタキシャル成長},
  booktitle = {},
  year = 2001,
}

@inproceedings{CTT100667912,
  author = {丸山武男 and 中村尚人 and 新山勇樹 and 渡辺正裕},
  title = {GaP(001)基板上に成長したBeZnSeからの室温紫外線PL発光},
  booktitle = {},
  year = 2001,
}

@inproceedings{CTT100672929,
  author = {Masahiro Watanabe and MASAHIRO ASADA},
  title = {CaF<sub>2</sub>/CdF<sub>2</sub> Resonant Tunneling Devices with High Peak-to-Valley Ratio on Silicon Substrate (Invited)},
  booktitle = {Frontier Science Research Conference, Science and Technology of Silicon Materials, S-II, La Jolla/CA, U.S.A.},
  year = 2001,
}

@inproceedings{CTT100672928,
  author = {Masahiro Watanabe and Naoto Sakamaki and Tatsuya Ishikawa},
  title = {Fine-Area Epitaxy of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode on Si},
  booktitle = {the First International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '01 (QNN '01), TuP-29, Tsukuba, Japan},
  year = 2001,
}

@inproceedings{CTT100672922,
  author = {Takeo Maruyama and Naoto Nakamura and Masahiro Watanabe},
  title = {Epitaxial growth of BeZnSe on CaF<sub>2</sub>/Si(111) substrate},
  booktitle = {43rd 2001 Electronic Materials Conference, Y3, Notre Dame, U.S.A.},
  year = 2001,
}

@inproceedings{CTT100672926,
  author = {Masahiro Watanabe and Naoto Sakamaki and Tatsuya Ishikawa and Daisuke Okamoto},
  title = {Selective growth of CdF<sub>2</sub>/CaF<sub>2</sub> resonant tunneling diode nanostructure on Si},
  booktitle = {43rd 2001 Electronic Materials Conference, Y4, Notre Dame, U.S.A.},
  year = 2001,
}

@inproceedings{CTT100672927,
  author = {Masahiro Watanabe and Naoto Sakamaki and Tatsuya Ishikawa},
  title = {Room Temperature Negative Differential Resistance with High Peak-to-Valley Crrent Ratio of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode on Silicon},
  booktitle = {Thirteenth International Conference on Indiumu Phosphide and Related Materials (IPRM'01), WP-30, Nara, Japan},
  year = 2001,
}

@inproceedings{CTT100667889,
  author = {岡野俊一 and 鈴木充典 and 渡辺正裕},
  title = {CaF<sub>2</sub>/Si(111)基板上ZnO薄膜のN.Gaコドーピング法による不純物制御},
  booktitle = {},
  year = 2001,
}

@inproceedings{CTT100667886,
  author = {丸山武男 and 中村尚人 and 渡辺正裕},
  title = {CaF<sub>2</sub>/Si(111)基板上へのBeZnSeエピタキシャル成長},
  booktitle = {},
  year = 2001,
}

@inproceedings{CTT100667887,
  author = {鈴木充典 and 岡野俊一 and 渡辺正裕},
  title = {CaF<sub>2</sub>/Si基板上ZnO薄膜の酸素雰囲気中アニール},
  booktitle = {},
  year = 2001,
}

@inproceedings{CTT100667909,
  author = {石川 達也 and 酒巻 直人 and 岡本 大輔 and 渡辺 正裕},
  title = {ナノ領域選択成長によるCdF<sub>2</sub>/CaF<sub>2</sub> 共鳴トンネルダイオードの作製と評価},
  booktitle = {},
  year = 2001,
}

@inproceedings{CTT100672925,
  author = {Masahiro Watanabe and Naoto Sakamaki and Tatsuya Ishikawa},
  title = {Feasibility study of CdF<sub>2</sub>/CaF<sub>2</sub> intersubband transition lasers},
  booktitle = {The 4th Pacific Rim Conference on Lasers and Electro-Optics, WC1-5, Chiba Japan.},
  year = 2001,
}

@inproceedings{CTT100667884,
  author = {酒巻直人 and 渡辺正裕},
  title = {CdF<sub>2</sub>/CaF<sub>2</sub>共鳴トンネルダイオードの室温微分負性抵抗特性},
  booktitle = {},
  year = 2000,
}

@inproceedings{CTT100667880,
  author = {丸山武男 and 中村尚人 and 渡辺正裕},
  title = {CaF<sub>2</sub>/Si(111)基板上へのBeSe成長},
  booktitle = {},
  year = 2000,
}

@inproceedings{CTT100667882,
  author = {鈴木充典 and 岡野俊一 and 渡辺正裕},
  title = {Si(111)上ZnO/CaF<sub>2</sub>ヘテロエピタキシャル構造からのPL紫外線発光},
  booktitle = {},
  year = 2000,
}

@inproceedings{CTT100669679,
  author = {M. Watanabe and Y. Iketani and M. Asada},
  title = {Characteristics of Epitaxial Si/CaF<sub>2</sub> Resonant Tunneling Diodes Grown on Si(111) 1° off Substrate},
  booktitle = {},
  year = 2000,
}

@inproceedings{CTT100669678,
  author = {M. Watanabe and T. Funayama and T. Teraji and N. Sakamaki},
  title = {Resonant Tunneling Characteristics of CdF<sub>2</sub>/CaF<sub>2</sub> Heterostructures Grown on Silicon},
  booktitle = {},
  year = 2000,
}

@inproceedings{CTT100669680,
  author = {M. Watanabe and T. Funayama and T. Teraji and N. Sakamaki},
  title = {Room Temperature Negative Differential Resistance of CdF<sub>2</sub>-CaF<sub>2</sub> Resonant Tunneling Diode on Si(111)},
  booktitle = {},
  year = 2000,
}

@inproceedings{CTT100669677,
  author = {M. Watanabe and T. Funayama and T. Teraji and N. Sakamaki},
  title = {Negative Differential Resistance with Peak to Valley Ratio Greater Than 100,000 of Double Barrier CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode on Si(111)},
  booktitle = {},
  year = 2000,
}

@inproceedings{CTT100667873,
  author = {舟山敏之 and 寺地耐志 and 渡辺正裕},
  title = {CdF<sub>2</sub>/CaF<sub>2</sub>共鳴トンネルダイオードの室温微分負性抵抗特性},
  booktitle = {},
  year = 2000,
}

@inproceedings{CTT100667879,
  author = {池谷吉史 and 渡辺正裕 and 浅田雅洋},
  title = {Si(111)1°off基板上Si/CaF<sub>2</sub>二重障壁共鳴トンネルダイオードの作製と評価},
  booktitle = {},
  year = 2000,
}

@inproceedings{CTT100667870,
  author = {中村尚人 and 丸山武男 and 渡辺正裕},
  title = {CaF<sub>2</sub>/Si(111)薄膜中Si微結晶からのEL発光},
  booktitle = {},
  year = 1999,
}

@inproceedings{CTT100667872,
  author = {池谷吉史 and 渡辺正裕 and 浅田雅洋},
  title = {テラス幅を制御したSi(111)1゜off 基板上へのCaF<sub>2</sub>イオンビームエピタキシャル成長},
  booktitle = {},
  year = 1999,
}

@inproceedings{CTT100667871,
  author = {筒井将史 and 渡辺正裕 and 浅田雅洋},
  title = {Si/CaF<sub>2</sub>ヘテロ構造共鳴トンネルダイオードの作製と評価},
  booktitle = {},
  year = 1999,
}

@inproceedings{CTT100669676,
  author = {T. Maruyama and N. Nakamura and M. Watanabe},
  title = {Visible Electroluninescence from Silicon Nanocrystals Embeded in CaF<sub>2</sub> Epilayers on Si(111) with Rapid Thermal Anneal},
  booktitle = {},
  year = 1999,
}

@inproceedings{CTT100669675,
  author = {M. Watanabe and Y. Maeda and S. Okano},
  title = {Epitaxial growth and UV luminescence of CaF<sub>2</sub>/ZnO/CaF<sub>2</sub> heterostructures on Si(111)},
  booktitle = {},
  year = 1999,
}

@inproceedings{CTT100667869,
  author = {岡野俊一 and 前田泰久 and 渡辺正裕},
  title = {Si(111)基板上CaF<sub>2</sub>/ZnO/CaF<sub>2</sub>ヘテロエピタキシャル構造からのEL紫外線発光},
  booktitle = {},
  year = 1999,
}

@inproceedings{CTT100669674,
  author = {M. Watanabe and Y. Maeda and A. Yamada},
  title = {Epitaxial growth of nanocrystal ZnO on CaF<sub>2</sub>/Si(111)},
  booktitle = {},
  year = 1998,
}

@inproceedings{CTT100667868,
  author = {丸山武男 and 中村尚人 and 渡辺正裕},
  title = {CaF<sub>2</sub>/Si(111)薄膜中に形成されたSi微結晶からのPL発光スペクトルのRTA雰囲気依存性},
  booktitle = {},
  year = 1998,
}

@inproceedings{CTT100669673,
  author = {M. Watanabe and Y. Aoki and W. Saitoh and M. Tsuganezawa},
  title = {Negative Differential Resistance of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy},
  booktitle = {},
  year = 1998,
}

@inproceedings{CTT100669664,
  author = {M. Watanabe and T. Maruyama and S. Ikeda},
  title = {Light Emission from Nanocrystal Si Embedded in CaF<sub>2</sub> Epilayers on Si(111): Effect of Rapid Thermal Annealing},
  booktitle = {},
  year = 1998,
}

@inproceedings{CTT100667859,
  author = {長田勝玄 and 青木雄一 and 津金澤みか and 渡辺正裕},
  title = {Si/CaF<sub>2</sub>超格子によるサブバンド間遷移レーザレーザの解析},
  booktitle = {},
  year = 1998,
}

@inproceedings{CTT100667789,
  author = {前田泰久 and 山田淳 and 渡辺正裕},
  title = {CaF<sub>2</sub>/Si(111)基板上ZnOナノ構造からのEL発光スペクトル},
  booktitle = {},
  year = 1998,
}

@inproceedings{CTT100667867,
  author = {丸山武男 and 池田総太郎 and 渡辺正裕},
  title = {CaF<sub>2</sub>/Si(111)薄膜中に形成されたSi微結晶からのPL発光スペクトルの成長条件依存性},
  booktitle = {},
  year = 1998,
}

@inproceedings{CTT100667788,
  author = {青木雄一 and 津金澤みか and 齋藤渉 and 渡辺正裕},
  title = {CaF<sub>2</sub>/CdF<sub>2</sub>ヘテロ超格子による3重障壁共鳴トンネルダイオードの微分負性抵抗},
  booktitle = {},
  year = 1998,
}

@inproceedings{CTT100667786,
  author = {青木雄一 and 齋藤渉 and 西山淳 and 渡辺正裕},
  title = {イオンビーム法を用いたCaF<sub>2</sub>/CdF<sub>2</sub>ヘテロ超格子の低温エピタキシャル成長},
  booktitle = {},
  year = 1997,
}

@inproceedings{CTT100667785,
  author = {渡辺正裕 and 池谷吉史 and 杉浦秀和 and 吉田和史},
  title = {イオンビームアシストを用いた低オフ角Si(111) 基板上へのCaF<sub>2</sub>エピタキシャル成長},
  booktitle = {},
  year = 1997,
}

@inproceedings{CTT100667787,
  author = {山田淳 and 前田泰久 and 渡辺正裕},
  title = {CaF<sub>2</sub>/Si(111)基板上ZnOナノ構造形成とPL発光スペクトル},
  booktitle = {},
  year = 1997,
}

@inproceedings{CTT100669663,
  author = {M. Watanabe and W. Saitoh and Y. Aoki and J. Nishiyama},
  title = {Epitaxial growth of nanometer-thick CaF<sub>2</sub>/CdF<sub>2</sub> heterostructure using partially ionized beam epitaxy},
  booktitle = {},
  year = 1997,
}

@inproceedings{CTT100669662,
  author = {W. Saitoh and Y. Aoki and J. Nishiyama and M. Watanabe and M. Asada},
  title = {Epitaxial growth of Si/CdF<sub>2</sub>/CaF<sub>2</sub> heterostructures on Si substrate},
  booktitle = {},
  year = 1997,
}

@inproceedings{CTT100667675,
  author = {齋藤渉 and 青木雄一 and 西山淳 and 渡辺正裕 and 浅田雅洋},
  title = {Si基板上Si/CdF<sub>2</sub>/CaF<sub>2</sub>ヘテロ構造エピタキシャル成長},
  booktitle = {},
  year = 1997,
}

@inproceedings{CTT100669659,
  author = {M. Watanabe and T. Matsunuma and T. Maruyama and M. Asada},
  title = {Electroluminescence from silicon nanoparticles embedded in CaF<sub>2</sub> on Si(111)},
  booktitle = {},
  year = 1997,
}

@inproceedings{CTT100667674,
  author = {青木雄一 and 西山淳 and 齋藤渉 and 渡辺正裕 and 浅田雅洋},
  title = {CaF<sub>2</sub>/CdF<sub>2</sub>ヘテロ接合を用いた量子井戸サブバンド間遷移レーザの解析},
  booktitle = {},
  year = 1997,
}

@inproceedings{CTT100667677,
  author = {賈学英 and 小島隆 and 早船嘉典 and 田村茂雄 and 渡辺正裕 and 荒井滋久},
  title = {近接効果補正露光による量子細線構造のサイズ揺らぎの低減},
  booktitle = {},
  year = 1997,
}

@inproceedings{CTT100669657,
  author = {M. Watanabe and T. Matsunuma and T. Maruyama and M. Asada},
  title = {Visible Electroluminescence from Silicon Nanoparticles Embedded in CaF<sub>2</sub> on Si(111)},
  booktitle = {},
  year = 1996,
}

@inproceedings{CTT100667670,
  author = {松沼健司 and 丸山武男 and 渡辺正裕 and 浅田雅弘},
  title = {CaF<sub>2</sub>ナノクリスタルシリコンからのEL発光スペクトル},
  booktitle = {},
  year = 1996,
}

@inproceedings{CTT100667672,
  author = {齋藤渉 and 森郁 and 杉浦秀和 and 丸山武男 and 渡辺正裕 and 浅田雅洋},
  title = {CaF<sub>2</sub>上極薄膜CoSi<sub>2</sub>電気抵抗のCaF<sub>2</sub>結晶依存性},
  booktitle = {},
  year = 1996,
}

@inproceedings{CTT100669655,
  author = {M. Asada and M. Watanabe and W. Saitoh and K. Mori and Y. Kohno},
  title = {Quantum-Effect Electron Devices Using Metal/Insulator Nanostructures (Invited)},
  booktitle = {},
  year = 1996,
}

@inproceedings{CTT100669648,
  author = {F. Vazquez and D. Kobayashi and I. Kobayashi and K. Furuya and Y. Miyamoto and T. Maruyama and M. Watanabe and M. Asada},
  title = {Experimental Evidence of Hot Electron Detection with Scanning Hot Electron Microscopy (SHEM)},
  booktitle = {},
  year = 1996,
}

@inproceedings{CTT100667663,
  author = {齋藤渉 and 山崎克之 and 浅田雅洋 and 渡辺正裕},
  title = {金属／絶縁体ヘテロ構造を用いた電界制御型トンネルトランジスタの理論解析},
  booktitle = {},
  year = 1996,
}

@inproceedings{CTT100667664,
  author = {松沼健司 and 丸山武男 and 渡辺正裕 and 浅田雅洋},
  title = {CaF<sub>2</sub>ナノクリスタルシリコンからのEL発光の成長条件依存性},
  booktitle = {},
  year = 1996,
}

@inproceedings{CTT100667665,
  author = {末益崇 and 齋藤渉 and 森郁 and 河野義史 and 渡辺正裕 and 浅田雅洋},
  title = {CoSi<sub>2</sub>/CaF<sub>2</sub>量子干渉トランジスタの微分負性抵抗を用いたホットエレクトロン輸送効率導出},
  booktitle = {},
  year = 1996,
}

@inproceedings{CTT100667668,
  author = {服部哲也 and 本郷廣生 and 宮本恭幸 and 古屋一仁 and 松沼 健司 and 渡辺正裕 and 浅田雅洋},
  title = {電子ビーム露光によるCaF<sub>2</sub>無機レジスト70nm周期パターニング},
  booktitle = {},
  year = 1996,
}

@inproceedings{CTT100669646,
  author = {K. Mori and W. Saitoh and T. Suemasu and Y. Kohno and M. Watanabe and M. Asada},
  title = {Room Temperature Observation of Multiple Negative Differential Resistance in a Metal(CoSi<sub>2</sub>)/Insulator (CaF<sub>2</sub>) Quantum Interference Transistor Structure},
  booktitle = {},
  year = 1995,
}

@inproceedings{CTT100669645,
  author = {M. Watanabe and T. Suemasu and W. Saitoh and M. Asada},
  title = {Metal(CoSi<sub>2</sub>)/Insulator(CaF<sub>2</sub>) Heterostructure Quantum Effect Device (Invited Paper)},
  booktitle = {},
  year = 1995,
}

@inproceedings{CTT100667662,
  author = {渡辺正裕 and 浅田雅洋 and 松沼健司},
  title = {CaF<sub>2</sub>/Si(111)薄膜中に形成されたナノメータSi微結晶},
  booktitle = {},
  year = 1995,
}

@inproceedings{CTT100667661,
  author = {森郁 and 齋藤渉 and 末益崇 and 河野義史 and 渡辺正裕 and 浅田雅洋},
  title = {極微細金属（CoSi<sub>2</sub>）／絶縁体（CaF<sub>2</sub>）量子干渉トランジスタの作製と室温特性},
  booktitle = {},
  year = 1995,
}

@inproceedings{CTT100669643,
  author = {W. Saitoh and T. Suemasu and Y. Kohno and M.Watanabe and M. Asada},
  title = {Metal(CoSi<sub>2</sub>)/Insulator(CaF<sub>2</sub>) Hot Electron Transistor usig Electron-Beam Lithography on Si Substrate},
  booktitle = {},
  year = 1995,
}

@inproceedings{CTT100669642,
  author = {T. Suemasu and W. Saitoh and Y. Kohno and M.Watanabe and M. Asada},
  title = {Multiple Negative Differential Resistance due to Quantum Interference of Hot Electron Waves in Metal(CoSi<sub>2</sub>)/Insulator (CaF<sub>2</sub>) Heterostructure},
  booktitle = {},
  year = 1995,
}

@inproceedings{CTT100669640,
  author = {M. Watanabe and F. Iizuka and M. Asada},
  title = {Photoluminescence Spectra of Silicon Nanometer Grains (<10nm) Embedded in CaF<sub>2</sub>Thin Films on Si(111)},
  booktitle = {},
  year = 1995,
}

@inproceedings{CTT100669516,
  author = {T. Suemasu and Y. Kohno and W. Saitoh and K. Mori and M.Watanabe and M. Asada},
  title = {Metal(CoSi<sub>2</sub>)/Insulator(CaF<sub>2</sub>) Resonant Tunneling and Interference Transistors Grown on Si Substrate},
  booktitle = {},
  year = 1995,
}

@inproceedings{CTT100669514,
  author = {M. Watanabe and F. Iizuka and M. Asada},
  title = {Formation of Silicon and Cobalt Silicide Nanometer Fine Particles (<10nm) in CaF<sub>2</sub>},
  booktitle = {},
  year = 1995,
}

@inproceedings{CTT100669515,
  author = {T. Suemasu and W. Saitoh and Y. Kohno and M.Watanabe and M. Asada},
  title = {Multiple Negative Differential Resistance due to Quantum Interference of Hot Electron Waves in Metal(CoSi<sub>2</sub>)/ Insulator(CaF<sub>2</sub>) Heterostructure},
  booktitle = {},
  year = 1995,
}

@inproceedings{CTT100667611,
  author = {末益崇 and 河野義史 and 齋藤 渉 and 森 郁 and 渡辺正裕 and 浅田雅洋},
  title = {Metal(CoSi<sub>2</sub>)/ Insulator(CaF<sub>2</sub>) 共鳴トンネルホットエレクトロントランジスタの低電圧動作化},
  booktitle = {},
  year = 1995,
}

@inproceedings{CTT100667612,
  author = {齋藤 渉 and 末益崇 and 河野義史 and 渡辺正裕 and 浅田雅洋},
  title = {金属（CoSi<sub>2</sub>）／絶縁体（CaF<sub>2</sub>）微細ホットエレクトロントランジスタの作製と室温動作},
  booktitle = {},
  year = 1995,
}

@inproceedings{CTT100667660,
  author = {渡辺正裕 and 飯塚文隆 and 浅田雅洋},
  title = {Si微粒子を分散したCaF<sub>2</sub>/Si(111)薄膜のフォトルミネッセンス},
  booktitle = {},
  year = 1995,
}

@inproceedings{CTT100669374,
  author = {M. Asada and M. Watanabe and T. Suemasu and Y. Kohno},
  title = {Metal(CoSi<sub>2</sub>)/Insulator(CaF<sub>2</sub>) resonant tunneling diodes and transistors},
  booktitle = {},
  year = 1994,
}

@inproceedings{CTT100667609,
  author = {渡辺正裕 and 浅田雅弘},
  title = {CaF<sub>2</sub>/Si(111)上への金属Co微粒子の形成},
  booktitle = {},
  year = 1994,
}

@inproceedings{CTT100667610,
  author = {齋藤 渉 and 末益崇 and 河野義史 and 渡辺正裕 and 浅田雅洋},
  title = {金属（CoSi<sub>2</sub>）／絶縁体（CaF<sub>2</sub>）共鳴トンネルホットエレクトロントランジスタの等価回路モデルによる特性評価},
  booktitle = {電気電子通信学会学術講演会},
  year = 1994,
}

@inproceedings{CTT100667607,
  author = {末益崇 and 河野義史 and 齋藤 渉 and 渡辺正裕 and 浅田雅洋},
  title = {金属（CoSi<sub>2</sub>）／絶縁体（CaF<sub>2</sub>）共鳴トンネルホットエレクトロントランジスタの作製（II）},
  booktitle = {},
  year = 1994,
}

@inproceedings{CTT100667608,
  author = {河野義史 and 末益崇 and 齋藤 渉 and 渡辺正裕 and 浅田雅洋},
  title = {金属（CoSi<sub>2</sub>）／絶縁体（CaF<sub>2</sub>）トンネルホットエレクトロン共鳴トランジスタ},
  booktitle = {},
  year = 1994,
}

@inproceedings{CTT100667603,
  author = {河野義史 and 末益崇 and 鈴木信弘 and 渡辺正裕 and 浅田雅洋},
  title = {新プロセスによる金属(CoSi<sub>2</sub>)/絶縁体(CaF<sub>2</sub>)トンネルホットエレクトロン共鳴トランジスタの作製},
  booktitle = {},
  year = 1994,
}

@inproceedings{CTT100667604,
  author = {鈴木信弘 and 末益崇 and 渡辺正裕 and 浅田雅洋 and 河野義史},
  title = {金属（CoSi<sub>2</sub>）／絶縁体（CaF<sub>2</sub>）微細ホットエレクトロントランジスタの作製（II）},
  booktitle = {},
  year = 1994,
}

@inproceedings{CTT100667605,
  author = {渡辺正裕 and 岩井 浩 and 浅田雅洋},
  title = {絶縁体CaF<sub>2</sub>上への金属Co微粒子の形成},
  booktitle = {},
  year = 1994,
}

@inproceedings{CTT100667606,
  author = {浅田雅洋 and 渡辺正裕 and 末益崇 and 鈴木信弘 and 河野義史},
  title = {金属／絶縁体ヘテロ接合を用いた量子効果デバイス},
  booktitle = {},
  year = 1994,
}

@inproceedings{CTT100667598,
  author = {末益崇 and 河野義史 and 鈴木信弘 and 齋藤 渉 and 渡辺正裕 and 浅田雅洋},
  title = {金属（CoSi<sub>2</sub>）／絶縁体（CaF<sub>2</sub>）共鳴トンネルホットエレクトロントランジスタの作製},
  booktitle = {},
  year = 1994,
}

@inproceedings{CTT100669373,
  author = {T. Suemasu and Y. Kohno and M. Watanabe and M. Asada and N. Suzuki},
  title = {Metal(CoSi<sub>2</sub>)/Insulator(CaF<sub>2</sub>) Resonant Tunneling Transistor},
  booktitle = {},
  year = 1993,
}

@inproceedings{CTT100669372,
  author = {M. Watanabe and T. Suemasu and J. Suzuki and Y. Kohno and M. Asada and N. Suzuki},
  title = {CoSi<sub>2</sub>/CaF<sub>2</sub>  Resonant Tunneling Diode on Si},
  booktitle = {},
  year = 1993,
}

@inproceedings{CTT100667597,
  author = {末益崇 and 薗田大資 and 渡辺正裕 and 浅田雅洋 and 古屋一仁},
  title = {Si/CaF<sub>2</sub>/Si(111)断面のSTM観察},
  booktitle = {},
  year = 1993,
}

@inproceedings{CTT100667595,
  author = {末益崇 and 河野義史 and 鈴木信弘 and 渡辺正裕 and 浅田雅洋},
  title = {金属(CoSi<sub>2</sub>)/絶縁体(CaF<sub>2</sub>)共鳴トンネルトランジスタ},
  booktitle = {},
  year = 1993,
}

@inproceedings{CTT100667596,
  author = {鈴木信弘 and 末益崇 and 渡辺正裕 and 浅田雅洋 and 河野義史},
  title = {金属(CoSi<sub>2</sub>)/絶縁体(CaF<sub>2</sub>)微細ホットエレクトロントランジスタの作製},
  booktitle = {},
  year = 1993,
}

@inproceedings{CTT100669371,
  author = {M. Asada and M. Watanabe and T. Suemasu and N. Suzuki and Y. Kohno},
  title = {Metal/Insulator Heterostructure Quantum Devices on Si Substrate},
  booktitle = {},
  year = 1993,
}

@inproceedings{CTT100667574,
  author = {末益崇 and 渡辺正裕 and 鈴木淳 and 浅田雅洋 and 鈴木信弘},
  title = {金属(CoSi<sub>2</sub>)/絶縁体(CaF<sub>2</sub>)共鳴トンネルダイオードにおける共鳴電圧制御},
  booktitle = {},
  year = 1993,
}

@inproceedings{CTT100667575,
  author = {鈴木信弘 and 河野義史 and 末益崇 and 渡辺正裕 and 浅田雅洋},
  title = {金属(CoSi<sub>2</sub>)/絶縁体(CaF<sub>2</sub>)共鳴トンネルホットエレクトロントランジスタの作製},
  booktitle = {},
  year = 1993,
}

@inproceedings{CTT100667572,
  author = {渡辺正裕 and 村竹茂樹 and 末益崇 and 浅田雅洋},
  title = {金属(CoSi<sub>2</sub>)/絶縁体(CaF<sub>2</sub>)ホットエレクトロントランジスタの電流増幅動作},
  booktitle = {},
  year = 1992,
}

@inproceedings{CTT100667573,
  author = {末益崇 and 渡辺正裕 and 浅田雅洋 and 鈴木信弘},
  title = {金属(CoSi<sub>2</sub>)/絶縁体(CaF<sub>2</sub>)共鳴トンネルダイオードの室温動作と微分負性抵抗特性},
  booktitle = {},
  year = 1992,
}

@inproceedings{CTT100669370,
  author = {T. Suemasu and M. Watanabe and S. Muratake and M. Asada and N. Suzuki},
  title = {Negative Differential Resistance in Metal(CoSi<sub>2</sub>)/Insulator(CaF<sub>2</sub>) Resonant Tunneling Diode},
  booktitle = {},
  year = 1992,
}

@inproceedings{CTT100667567,
  author = {渡辺正裕 and 鈴木信弘 and 村竹茂樹 and 末益崇 and 浅田雅洋},
  title = {Si(111)基板上CaF<sub>2</sub>エピタキシーにおけるRHEED強度振動},
  booktitle = {},
  year = 1992,
}

@inproceedings{CTT100667569,
  author = {渡辺正裕 and 末益崇 and 村竹茂樹 and 浅田雅洋 and 鈴木信弘},
  title = {金属(CoSi<sub>2</sub>)/絶縁体(CaF<sub>2</sub>)共鳴トンネルダイオードの負性抵抗特性},
  booktitle = {},
  year = 1992,
}

@inproceedings{CTT100667565,
  author = {末益崇 and 渡辺正裕 and 村竹茂樹 and 浅田雅洋},
  title = {Siの電子ビーム蒸着によるCaF<sub>2</sub>/Si(111)上へのCoSi<sub>2</sub>エピタキシャル成長},
  booktitle = {},
  year = 1991,
}

@inproceedings{CTT100667564,
  author = {渡辺正裕 and 村竹茂樹 and 藤本寛正 and 浅田雅洋},
  title = {金属(CoSi<sub>2</sub>)/絶縁体(CaF<sub>2</sub>)超格子構造のエピタキシャル成長},
  booktitle = {},
  year = 1991,
}

@inproceedings{CTT100667566,
  author = {村竹茂樹 and 渡辺正裕 and 浅田雅洋},
  title = {CoSi<sub>2</sub>/CaF<sub>2</sub>/Si を用いたMISトンネルダイオードの試作},
  booktitle = {},
  year = 1991,
}

@inproceedings{CTT100669330,
  author = {M. Watanabe and S. Muratake and H. Fujimoto and S. Sakamori and M. Asada and S. Arai},
  title = {Epitaxial Growth of CoSi<sub>2</sub>/CaF<sub>2</sub> heterostructures on Si(111) by Ionized-Cluster-Beam Technique},
  booktitle = {},
  year = 1991,
}

@inproceedings{CTT100667562,
  author = {渡辺正裕 and 村竹茂樹 and 藤本寛正 and 坂森重則 and 浅田雅洋 and 荒井滋久},
  title = {CaF<sub>2</sub>/Si(111)上CoSi<sub>2</sub>薄膜の抵抗率測定},
  booktitle = {},
  year = 1991,
}

@inproceedings{CTT100667563,
  author = {六車仁志 and 渡辺正裕 and 浅田雅洋 and 荒井滋久},
  title = {金属(CoSi<sub>2</sub>)/絶縁体(CaF<sub>2</sub>)超格子のエネルギーバンド構造},
  booktitle = {},
  year = 1991,
}

@inproceedings{CTT100667443,
  author = {坂口知明 and 渡辺正裕 and 浅田雅洋},
  title = {金属/絶縁体へテロ構造を用いた量子サイズ効果高速電子デバイスの理論解析},
  booktitle = {},
  year = 1990,
}

@inproceedings{CTT100667441,
  author = {渡辺正裕 and 六車仁志 and 村竹茂樹 and 浅田雅洋 and 荒井滋久},
  title = {ICB法による CaF<sub>2</sub>/CoSi<sub>2</sub>/CaF<sub>2</sub>/Si(111) エピタキシャル成長},
  booktitle = {},
  year = 1990,
}

@inproceedings{CTT100667439,
  author = {渡辺正裕 and 六車仁志 and 村竹茂樹 and 浅田雅洋 and 荒井滋久},
  title = {ICB法によるCaF<sub>2</sub>(111)薄膜上へのCoSi<sub>2</sub>エピタキシャル成長},
  booktitle = {第37回応用物理学会関係連合講演会},
  year = 1990,
}

@inproceedings{CTT100667440,
  author = {渡辺正裕 and 浅田雅弘},
  title = {空間電荷制限金属/絶縁体電子デバイスのグリッドバリアモード解析},
  booktitle = {},
  year = 1990,
}

@inproceedings{CTT100667434,
  author = {浅田雅洋 and 坂口知明 and 渡辺正裕},
  title = {ナノメータ絶縁膜を用いたLSI用新デバイスの可能性},
  booktitle = {},
  year = 1989,
}

@inproceedings{CTT100667433,
  author = {渡辺正裕 and 六車仁志 and 浅田雅洋 and 荒井滋久},
  title = {ICB法によるCaF<sub>2</sub>膜の低温エピタキシャル成長},
  booktitle = {},
  year = 1989,
}

@inproceedings{CTT100667431,
  author = {渡辺正裕 and 六車仁志 and 浅田雅洋 and 荒井滋久},
  title = {ICB-CaF<sub>2</sub>膜における絶縁耐圧の加速電圧依存性},
  booktitle = {},
  year = 1989,
}

@misc{CTT100672954,
  author = {渡辺正裕},
  title = {ナノデバイスの機能設計と超高真空技術～新原理不揮発メモリ素子の探索的研究を例として～},
  year = 2014,
}

@misc{CTT100672952,
  author = {渡辺正裕},
  title = {「金属／絶縁体ヘテロ接合電子デバイス」},
  year = 2014,
}

@misc{CTT100712063,
  author = {MASAHIRO WATANABE},
  title = {Enhancement of Multiexciton Generation using Epitaxial},
  year = 2009,
}

@misc{CTT100672515,
  author = {自念圭輔 and 内田薫 and 小平新志 and 渡辺正裕 and 浅田雅洋},
  title = {Si基板上弗化物系サブバンド間遷移レーザの理論解析},
  year = 2007,
}

@misc{CTT100712062,
  author = {自念圭輔 and 菊池毅 and 小平新志 and 内田 薫 and 渡辺正裕 and 浅田雅洋},
  title = {Si基板上(CdF<aub>2</sub>/CaF<sub>2</sub>)サブバンド間遷移レーザ構造のEL発光特性},
  year = 2006,
}

@misc{CTT100672513,
  author = {金澤 徹 and 諸澤篤史 and 藤井 諒 and 和田宇史 and 渡辺正裕 and 浅田雅洋},
  title = {ナノ領域成長を用いたSi(100)基板上弗化物系共鳴トンネルダイオード},
  year = 2006,
}

@misc{CTT100672507,
  author = {渡辺正裕 and 田村信平 and 金澤徹 and 自念圭輔 and 浅田雅洋},
  title = {ローカルエピタキシー法によるCoSi<sub>2</sub>/CaF<sub>2</sub>三重障壁共鳴トンネルダイオードの微分負性抵抗特性},
  year = 2005,
}

@misc{CTT100712061,
  author = {MASAHIRO WATANABE},
  title = {Migration enhanced epitaxy of BeZnSe grown on GaP substrate},
  year = 2004,
}

@misc{CTT100672504,
  author = {渡辺正裕 and 金澤徹 and 自念圭輔 and 浅田雅洋},
  title = {Si(100)基板上に形成されたCdF<sub>2</sub>/CaF<sub>2</sub>超ヘテロ構造による共鳴トンネルダイオードの室温微分負性抵抗特性},
  year = 2004,
}

@misc{CTT100672505,
  author = {Y. Niiyama and T. Yokoyama and M. Watanabe},
  title = {Epitaxial growth and optical properties of BeMgZnSe for ultraviolet laser diodes},
  year = 2003,
}

@misc{CTT100672502,
  author = {渡辺正裕 and 松田克己 and 藤岡裕智 and 金澤徹 and 浅田雅洋},
  title = {ローカルエピタキシー法により形成されたシリコン基板上CdF<sub>2</sub>/CaF<sub>2</sub>共鳴トンネルダイオードの微分負性抵抗特性の構造依存性},
  year = 2003,
}

@misc{CTT100672500,
  author = {渡辺正裕 and 石川達也 and 松田克己 and 金澤徹 and 浅田雅洋},
  title = {ナノ領域成長によるSi(111)及びSi(100)基板上CdF<sub>2</sub>/CaF<sub>2</sub>共鳴トンネルダイオード},
  year = 2002,
}

@misc{CTT100672498,
  author = {渡辺正裕 and 筒井将史 and 浅田雅洋},
  title = {Si-CaF<sub>2</sub>及びCdF<sub>2</sub>-CaF<sub>2</sub>ヘテロ接合を用いたシリコン基板上共鳴トンネルダイオード},
  year = 2000,
}

@misc{CTT100669329,
  author = {Masahiro WATANABE and Mika TSUGANEZAWA and Tosihyuki FUNAYAMA and Daisuke KURUMA},
  title = {Negative differential resistance of CdF<sub>2</sub>/CaF<sub>2</sub> resonant tunneling diode on Si(111) grown by partially ionized beam epitaxy},
  year = 1998,
}

@misc{CTT100669328,
  author = {Masahiro WATANABE and Yuichi AOKI},
  title = {CaF<sub>2</sub>/CdF<sub>2</sub> Quantum well intersubband transition lasers},
  year = 1997,
}

@misc{CTT100672494,
  author = {齋藤渉 and 筒井将史 and 青木雄一 and 山崎克之 and 西山淳 and 渡辺正裕 and 浅田雅洋},
  title = {Si基板上Si/CdF<sub>2</sub>量子井戸構造を用いた電界効果型量子効果デバイス},
  year = 1997,
}

@misc{CTT100669327,
  author = {Masahiro WATANABE and Takeshi MATSUNUMA and Takeo MARUYAMA and Masahiro ASADA},
  title = {Visible light emission from nanocrystalline silicon embedded in CaF<sub>2</sub> layers on Si(111)},
  year = 1996,
}

@misc{CTT100672496,
  author = {浅田雅洋 and 渡辺正裕 and 末益崇 and 河野義史 and 齋藤渉 and 森郁},
  title = {金属(CoSi<sub>2</sub>)/絶縁体(CaF<sub>2</sub>)/Siヘテロ接合量子効果デバイス},
  year = 1996,
}

@misc{CTT100672491,
  author = {渡辺正裕 and 末益崇 and 鈴木信弘 and 浅田雅洋},
  title = {Si(111)上金属(CoSi<sub>2</sub>)/絶縁体(CaF<sub>2</sub>)極薄膜多層構造による共鳴トンネルダイオード},
  year = 1993,
}

@misc{CTT100672487,
  author = {渡辺正裕 and 末益崇 and 村竹茂樹 and 浅田雅洋},
  title = {金属(CoSi<sub>2</sub>)/絶縁体(CaF<sub>2</sub>)共鳴トンネルダイオードの微分負性抵抗特性},
  year = 1992,
}

@misc{CTT100595183,
  author = {MASAHIRO WATANABE},
  title = {Fundamental Study of Metal/Insulator Heterostructure Electron Devices},
  year = 1993,
}



@phdthesis{CTT100595183,
  author = {MASAHIRO WATANABE},
  title = {Fundamental Study of Metal/Insulator Heterostructure Electron Devices},
  school = {東京工業大学},
  year = 1993,
}