論文

• Chia-Yuan Chang, Heng-Tung Hsu, Edward Yi Chang, Hai-Dang Trinh, Yasuyuki Miyamoto. InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric, Electrochemical and Solid-State Letters,, vol. 12, no. 12, pp. H456-H459, Dec. 2009.
• Chia-Yuan Chang, Heng-Tung Hsu, Edward Yi Chang, YASUYUKI MIYAMOTO. InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications, Japanese Journal of Applied Physics, Volume 48, No. 4, Issue 2, 04C094 (3 pages), Apr. 2009.
• Chien-I Kuo, Heng-Tung Hsu, Edward Yi Chang, Chia-Yuan Chang, Yasuyuki Miyamoto, Suman Datta, Marko Radosavljevic, Guo-Wei Huang, Ching Ting Lee. RF and Logic Performance Improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite channel HEMTs Using Gate-Sinking Technology, IEEE Electron Device Lett., IEEE, vol. 29, no. 4, pp. 290-293, Apr. 2008.
• Chia-Yuan Chang, Heng-Tung Hsu, Edward Yi Chang, Chien-I Kuo, Suman Datta, Marko Radosavljevic, YASUYUKI MIYAMOTO, Guo-Wei Huang. Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power Applications, IEEE Electron Dev. Lett., vol. 28, no. 10, pp. 856-858, Oct. 2007.

国際会議発表 (査読有り)

• C. Y. Chang, H. T. Hsu, E. Y. Chang, C. I. Kuo, Y. Miyamoto. InAs-Channel HEMTs for Ultra- Low-Power LNA Applications, 2008 International Conference on Solid State Devices and Materials, Sept. 2008.
• Chien-I Kuo, Edward Yi Chang, Chia-Yuan Chang, Heng-Tung Hsu, YASUYUKI MIYAMOTO. Investigation of impact ionization from InXGa1-XAs to InAs channel HEMTs for high speed and low power applications, The 20th Indium Phosphide and Related Material Conf. (IPRM 2008), May 2008.
• Chia-Yuan Chang, Edward Yi Chang, Yi-Chung Lien, Yasuyuki Miyamoto, Chien-I Kuo, Sze-Hung Cheng, Li-Hsin Chu. High-PerformanceIn0.52Al0.48As/In0.6Ga0.4AsPower Metamorphic HEMT for Ka-Band Applications,, IEEE International Conference on Semiconductor Electronics, Nov. 2006.

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