@article{CTT100875619,
  author = {Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Tien-Kan Chung and Edward Yi Chang and Kuniyuki Kakushima},
  title = {Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100875614,
  author = {Kazuto Mizutani and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Edward Y. Chang and Kuniyuki Kakushima},
  title = {Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@article{CTT100855460,
  author = {Sung-Lin Tsai and Takuya Hoshii and Hitoshi Wakabayashi and Kazuo Tsutsui and Tien-Kan Chung and Edward Yi Chang and Kuniyuki Kakushima},
  title = {On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films},
  journal = {Japanese Journal of Applied Physics (JJAP) （SSDM特集号）},
  year = 2021,
}

@article{CTT100855459,
  author = {S-L. Tsai and T. Hoshii and H. Wakabayashi and K. Tsutsui and T-K. Chung and E. Chang and K. Kakushima},
  title = {Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering},
  journal = {Applied Physics Letters},
  year = 2021,
}

@article{CTT100828638,
  author = {Kuan Ning Huang and Yueh-Chin Lin and Jia Ching Lin and Chia Chieh Hsu and Jin Hwa Lee and Chia-Hsun Wu and Jing Neng Yao and Heng-Tung Hsu and Venkatesan Nagarajan and Kuniyuki Kakushima and Kazuo Tsutsui and Hiroshi Iwai and Edward Yi Chang and Chao Hsin Chien},
  title = {Study of E-mode AlGaN/GaN MIS-HEMT with La-silicate gate insulator for power applications},
  journal = {Journal of Electronic Materials},
  year = 2019,
}

@article{CTT100786665,
  author = {Yueh Chin Lin and Yu Xiang Huang and Gung Ning Huang and Chia Hsun Wu and Jing Neng Yao and Chung Ming Chu and Shane Chang and Chia Chieh Hsu and Jin Hwa Lee and Kuniyuki Kakushima and Kazuo Tsutsui and Hiroshi Iwai and Edward Yi Chang},
  title = {Enhancement-Mode GaN MIS-HEMTs with LaHfOx Gate Insulator for Power Application},
  journal = {IEEE Electron Device Letters},
  year = 2017,
}

@article{CTT100715509,
  author = {F. A. Fatah and Y.-C. Lin and R.-X. Liu and K.-C. Yang and T.-W. Lin and H.-T. Hsu and J.-H. Yang and Y. Miyamoto and H. Iwai and C. Hu and S. Salahuddin and E. Y. Chang},
  title = {A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/ In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications,},
  journal = {Applied Physics Express},
  year = 2016,
}

@article{CTT100715190,
  author = {F. A. Fatah and Y.-C. Lin and T.-Y. Lee and K.-C. Yang and R.-X. Liu and J.-R. Chan and H.-T. Hsu and Y. Miyamoto and E. Y. Chang},
  title = {Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications},
  journal = {Solid State Sci. Technol},
  year = 2015,
}

@article{CTT100659579,
  author = {E. Y. Chang and C.-I Kuo and H.-T. Hsu and C.-Y. Chiang and Y. Miyamoto},
  title = {InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications},
  journal = {Appl. Phys. Exp.},
  year = 2013,
}

@article{CTT100659578,
  author = {C.-H. Yu and H.-T. Hsu and C.-Y. Chiang and C.-I Kuo and Y. Miyamoto and E. Y. Chang},
  title = {Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching},
  journal = {JPN. J. APPL. PHYS.},
  year = 2013,
}

@article{CTT100659577,
  author = {F. Fatah and C.-I Kuo and H.-T. Hsu and C.-Y. Chiang and C.-Y. Hsu and Y. Miyamoto and E. Y. Chang},
  title = {Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz},
  journal = {JPN. J. APPL. PHYS.},
  year = 2012,
}

@article{CTT100610508,
  author = {C-I. Kuo and H-T. Hsu and Y-L. Chen and C-Y. Wu and E. Y. Chang and Y. Miyamoto and W-C. Tsern and K. C. Sahoo},
  title = {RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1 - xAs)m/(InAs)n Superlattice-Channel Structure for Millimeter-Wave Applications},
  journal = {IEEE Electron Device Letters},
  year = 2010,
}

@article{CTT100601396,
  author = {Chia-Ta Chang and Heng-Tung  Hsu and Edward Yi Chang and Chien-I Kuo and Jui-Chien  Huang and Chung-Yu  Lu and Yasuyuki Miyamoto},
  title = {30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs},
  journal = {IEEE Electron Device Letters},
  year = 2010,
}

@article{CTT100598425,
  author = {Chia-Yuan Chang and Heng-Tung Hsu and Edward Yi Chang and Hai-Dang Trinh and Yasuyuki Miyamoto},
  title = {InAs-Channel Metal-Oxide-Semiconductor HEMTs  with Atomic-Layer-Deposited Al2O3 Gate Dielectric},
  journal = {Electrochemical and Solid-State Letters,},
  year = 2009,
}

@article{CTT100576961,
  author = {Chia-Yuan  Chang and Heng-Tung  Hsu and Edward Yi  Chang and YASUYUKI MIYAMOTO},
  title = {InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications},
  journal = {Japanese Journal of Applied Physics},
  year = 2009,
}

@article{CTT100565405,
  author = {Chien-I KUO and Heng-Tung HSU and Edward Yi CHANG and Yasuyuki MIYAMOTO and Wen-Chung TSERN},
  title = {InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application},
  journal = {Japanese Journal of Applied Physics},
  year = 2008,
}

@article{CTT100554640,
  author = {Chien-I Kuo and Heng-Tung Hsu and Edward Yi Chang and Chia-Yuan Chang and Yasuyuki Miyamoto and Suman Datta and Marko Radosavljevic and Guo-Wei Huang and Ching Ting Lee},
  title = {RF and Logic Performance Improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite channel HEMTs Using Gate-Sinking Technology},
  journal = {IEEE Electron Device Lett.},
  year = 2008,
}

@article{CTT100549484,
  author = {Chia-Yuan  Chang and Heng-Tung  Hsu and Edward Yi  Chang and Chien-I  Kuo and Suman   Datta and Marko  Radosavljevic and YASUYUKI MIYAMOTO and Guo-Wei  Huang},
  title = {Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power Applications},
  journal = {IEEE Electron Dev. Lett.},
  year = 2007,
}

@inproceedings{CTT100619798,
  author = {Chien-I Kuo and Wee Chin Lim and Heng-Tung Hsu and Chin-Te Wang and Li-Han Hsu and Faiz Aizad and Guo-Wei Hung and Yasuyuki Miyamoto and Edward Yi Chang},
  title = {Bonding Temperature Effect on the Performance of Flip Chip Assembled 150nm mHEMT Device on Organic Substrate},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610521,
  author = {Faiz Aizad and Heng-Tung Hsu and Chien-I Kuo and Chien-Ying Wu and Edward Yi Chang and Yasuyuki Miyamoto and Guo-Wei Huang and Yu-Lin Chen and Yu-Sheng Chiu},
  title = {Investigation Logic Performances of 80-nm HEMTs for InxGa1?xAs},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100610520,
  author = {C.-T. Wang and C.-I. Kuo and W.-C. Lim and L.-H. Hsu and H.-T. Hsu and Y. Miyamoto and E.Y. Chang and S.-P. Tsai and Y.-S. Chiu},
  title = {An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100576971,
  author = {Chien-I  Kuo and Heng-Tung  Hsu and Chung Li and Chien Ying  Wu and Edward Yi  Chang and YASUYUKI MIYAMOTO and Y.-L. Chen and D. Biswas},
  title = {A 40-nm-Gate InAs/InGaAs Composite-Channel HEMT with 2200 mS/mm and 500-GHz fT},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100576966,
  author = {Edward Yi  Chang and Chien-I  Kuo and Heng-Tung  Hsu and YASUYUKI MIYAMOTO and Chia Ta Chang and Chien Ying  Wu},
  title = {Evaluation of InAs QWFET for Low Power Logic applications},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100565409,
  author = {C. Y. Chang and H. T. Hsu and E. Y. Chang and C. I. Kuo and Y. Miyamoto},
  title = {InAs-Channel HEMTs for Ultra- Low-Power LNA Applications},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576962,
  author = {Chien-I  Kuo and Edward Yi  Chang and Chia-Yuan  Chang and Heng-Tung  Hsu and YASUYUKI MIYAMOTO},
  title = {Investigation of impact ionization from InXGa1-XAs to InAs channel HEMTs for high speed and low power applications},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100549524,
  author = {Chia-Yuan Chang and Edward Yi Chang and Yi-Chung Lien and Yasuyuki Miyamoto and Chien-I Kuo and Sze-Hung  Cheng and Li-Hsin  Chu},
  title = {High-PerformanceIn0.52Al0.48As/In0.6Ga0.4AsPower Metamorphic HEMT for Ka-Band Applications,},
  booktitle = {},
  year = 2006,
}